AOU412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOU412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOU412 is Pb-free (meets ROHS & Sony 259 specifications). AOU412L is a Green Product ordering option. AOU412 and AOU412L are electrically identical. VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) RDS(ON) < 11mΩ (VGS = 4.5V) TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TC=25°C G Pulsed Drain Current C Avalanche Current C TC=25°C Power Dissipation B ±20 V Junction and Storage Temperature Range 200 IAR 30 A EAR 120 mJ 100 Steady-State Steady-State W 50 TJ, TSTG Thermal Characteristics Parameter Alpha & Omega Semiconductor, Ltd. A 65 ID IDM PD TC=100°C Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 85 TC=100°C B Repetitive avalanche energy L=0.1mH Maximum 30 -55 to 175 Symbol RθJA RθJL °C Typ Max Units 105 1 125 1.5 °C/W °C/W AOU412 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage On state drain current ID(ON) RDS(ON) gFS VSD IS Conditions Min ID=250µA, VGS=0V VDS=24V, VGS=0V 30 VDS=0V, VGS= ±20V VDS=VGS ID=250µA 1.5 VGS=10V, VDS=5V VGS=10V, ID=20A Qgd tD(on) Gate Drain Charge Turn-On DelayTime tr tD(off) tf trr Qrr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time 0.005 1 5 TJ=125°C VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs Units µA 100 nA 2.15 2.5 V 5.7 8.4 7.5 10 mΩ 8.7 11 mΩ 1 85 S V A V 85 VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Max TJ=55°C Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Typ A 60 0.72 1320 533 154 0.95 1600 1.2 pF pF pF Ω 26 32 nC 13.3 16.2 nC 3.2 6.6 7.2 12.5 22 6 29.7 29 nC nC 10 18 33 9 36 36 ns ns ns ns ns nC A: The value of R θJA is measured with the device in a still air environment with TA =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOU412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 4.0V 50 50 40 125°C ID(A) ID (A) 40 VDS=5V 30 3.5V 30 25°C 20 20 10 10 VGS=3V 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3.5 4 4.5 1.8 Normalized On-Resistance 11 10 VGS=4.5V 9 8 7 VGS=10V 6 5 4 ID=20A 1.6 VGS=10V 1.4 VGS=4.5V 1.2 1 0.8 0 10 20 30 40 50 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 20 1.0E+01 16 125°C 1.0E+00 IS (A) ID=20A RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics 12 RDS(ON) (mΩ) 2.5 12 125°C 1.0E-01 25°C 1.0E-02 1.0E-03 8 1.0E-04 25°C 1.0E-05 4 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOU412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2400 10 VDS=15V ID=20A 2000 Capacitance (pF) VGS (Volts) 8 6 4 2 1600 1200 Coss 800 400 0 5 10 15 20 25 30 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1000 1000 RDS(ON) limited 10µs 1ms 800 10ms 10 DC TJ(Max)=175°C TA=25°C 1 1 10 100 400 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJA RθJC=1.5°C/W 0 1E-05 1E-04 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 600 200 0.1 0.1 TJ(Max)=175°C TA=25°C 100µs Power (W) 100 ID (Amps) Crss 0 0 ZθJC Normalized Transient Thermal Resistance Ciss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOU412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C 100 Power Dissipation (W) ID(A), Peak Avalanche Current 120 80 60 tA = 40 L⋅ ID BV − V DD 20 0 0.00001 0.001 0.01 60 40 20 80 60 40 20 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note B) 100 Current rating ID(A) 80 0 0.0001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 0 100 175 175