AOSMD AOU412

AOU412
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOU412 uses advanced trench technology to
provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOU412 is Pb-free (meets ROHS
& Sony 259 specifications). AOU412L is a Green
Product ordering option. AOU412 and AOU412L are
electrically identical.
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 7.5mΩ (VGS = 10V)
RDS(ON) < 11mΩ (VGS = 4.5V)
TO-251
D
Top View
Drain
Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
TC=25°C
G
Pulsed Drain Current
C
Avalanche Current
C
TC=25°C
Power Dissipation
B
±20
V
Junction and Storage Temperature Range
200
IAR
30
A
EAR
120
mJ
100
Steady-State
Steady-State
W
50
TJ, TSTG
Thermal Characteristics
Parameter
Alpha & Omega Semiconductor, Ltd.
A
65
ID
IDM
PD
TC=100°C
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
85
TC=100°C B
Repetitive avalanche energy L=0.1mH
Maximum
30
-55 to 175
Symbol
RθJA
RθJL
°C
Typ
Max
Units
105
1
125
1.5
°C/W
°C/W
AOU412
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
On state drain current
ID(ON)
RDS(ON)
gFS
VSD
IS
Conditions
Min
ID=250µA, VGS=0V
VDS=24V, VGS=0V
30
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
1.5
VGS=10V, VDS=5V
VGS=10V, ID=20A
Qgd
tD(on)
Gate Drain Charge
Turn-On DelayTime
tr
tD(off)
tf
trr
Qrr
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
0.005
1
5
TJ=125°C
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
Units
µA
100
nA
2.15
2.5
V
5.7
8.4
7.5
10
mΩ
8.7
11
mΩ
1
85
S
V
A
V
85
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Max
TJ=55°C
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Typ
A
60
0.72
1320
533
154
0.95
1600
1.2
pF
pF
pF
Ω
26
32
nC
13.3
16.2
nC
3.2
6.6
7.2
12.5
22
6
29.7
29
nC
nC
10
18
33
9
36
36
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device in a still air environment with TA =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOU412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
10V
4.0V
50
50
40
125°C
ID(A)
ID (A)
40
VDS=5V
30
3.5V
30
25°C
20
20
10
10
VGS=3V
0
0
0
1
2
3
4
5
1.5
2
VDS (Volts)
Fig 1: On-Region Characteristics
3.5
4
4.5
1.8
Normalized On-Resistance
11
10
VGS=4.5V
9
8
7
VGS=10V
6
5
4
ID=20A
1.6
VGS=10V
1.4
VGS=4.5V
1.2
1
0.8
0
10
20
30
40
50
60
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+02
20
1.0E+01
16
125°C
1.0E+00
IS (A)
ID=20A
RDS(ON) (mΩ)
3
VGS(Volts)
Figure 2: Transfer Characteristics
12
RDS(ON) (mΩ)
2.5
12
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
8
1.0E-04
25°C
1.0E-05
4
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AOU412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2400
10
VDS=15V
ID=20A
2000
Capacitance (pF)
VGS (Volts)
8
6
4
2
1600
1200
Coss
800
400
0
5
10
15
20
25
30
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
1000
RDS(ON)
limited
10µs
1ms
800
10ms
10
DC
TJ(Max)=175°C
TA=25°C
1
1
10
100
400
VDS (Volts)
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJA
RθJC=1.5°C/W
0
1E-05 1E-04 0.001 0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
600
200
0.1
0.1
TJ(Max)=175°C
TA=25°C
100µs
Power (W)
100
ID (Amps)
Crss
0
0
ZθJC Normalized Transient
Thermal Resistance
Ciss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOU412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
TA=25°C
100
Power Dissipation (W)
ID(A), Peak Avalanche Current
120
80
60
tA =
40
L⋅ ID
BV − V DD
20
0
0.00001
0.001
0.01
60
40
20
80
60
40
20
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
Current rating ID(A)
80
0
0.0001
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
0
100
175
175