APTGT50DSK120T3G Dual Buck chopper Fast Trench + Field Stop IGBT® Power Module Application • AC and DC motor control • Switched Mode Power Supplies 13 14 Q2 Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance • High level of integration • Internal thermistor for temperature monitoring 11 10 19 22 7 23 8 CR1 CR2 29 30 31 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a single buck of twice the current capability. • RoHS Compliant Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 125°C Max ratings 1200 75 50 100 ±20 270 100A @ 1150V Unit V A July, 2006 18 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT50DSK120T3G – Rev 1 Q1 VCES = 1200V IC = 50A @ Tc = 80°C APTGT50DSK120T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Crss Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Tj = 25°C Tj = 125°C Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V VGE = 0V VCE = 1200V Test Conditions VGE = 0V,VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 50A R G = 18Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A R G = 18Ω VGE = ±15V VBus = 600V IC = 50A R G = 18Ω VRRM IRM IF DC Forward Current VF Diode Forward Voltage 5.0 Min 1.7 2.0 5.8 Typ 3600 160 90 30 420 70 Max 250 500 2.1 Max Unit pF ns ns 90 5 5.5 Min Typ Max Reverse Recovery Time Qrr Reverse Recovery Charge IF = 60A VR = 800V di/dt =200A/µs Er Reverse Recovery Energy IF = 60A VR = 800V Unit V Tj = 25°C Tj = 125°C Tc = 70°C trr V V nA 1200 IF = 60A IF = 120A IF = 60A µA 6.5 400 90 50 520 Tj = 125°C Test Conditions VR=1200V Unit mJ Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 1.4 Tj = 125°C Chopper diode ratings and characteristics Symbol Characteristic Typ 250 500 Tj = 125°C 60 2 2.3 1.8 Tj = 25°C 400 Tj = 125°C Tj = 25°C 470 1200 Tj = 125°C 4000 Tj = 125°C 2.2 µA A 2.5 V ns July, 2006 ICES Test Conditions nC mJ di/dt =1000A/µs www.microsemi.com 2-5 APTGT50DSK120T3G – Rev 1 Symbol Characteristic APTGT50DSK120T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.45 0.9 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 110 °C N.m g 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT50DSK120T3G – Rev 1 28 17 1 July, 2006 SP3 Package outline (dimensions in mm) APTGT50DSK120T3G Typical Performance Curve Output Characteristics (VGE =15V) 100 Output Characteristics 100 TJ = 125°C T J=25°C 80 80 VGE=17V VGE=13V 60 VGE =15V 40 40 VGE=9V 20 20 60 IC (A) IC (A) T J=125°C 0 0 0 0.5 1 1.5 2 V CE (V) 3 0 3.5 12 TJ=25°C 80 2 VCE (V) VCE = 600V VGE = 15V RG = 18Ω TJ = 125°C 10 8 E (mJ) 60 TJ=125°C 40 6 3 4 Eon Eoff 4 Eon TJ=125°C 20 2 0 0 5 6 7 8 9 V GE (V) 10 11 10 12 10 Eon 90 110 100 80 8 7 60 40 Eoff Eoff 6 70 Reverse Bias Safe Operating Area IC (A) 9 50 120 VCE = 600V VGE =15V IC = 50A T J = 125°C 11 30 IC (A) Switching Energy Losses vs Gate Resistance 12 E (mJ) 1 Energy losses vs Collector Current Transfert Characteristics 100 IC (A) 2.5 VGE =15V TJ =125°C RG=18Ω 20 5 4 0 0 20 40 60 Gate Resistance (ohms) 80 0 400 800 VCE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT 0.9 July, 2006 0.4 0.7 0.3 0.2 0.1 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT50DSK120T3G – Rev 1 Thermal Impedance (°C/W) 0.5 APTGT50DSK120T3G Forward Characteristic of diode 160 VCE=600V D=50% RG =18Ω TJ=125°C TC=75°C 60 ZCS ZVS 40 140 120 100 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 80 T J=125°C 80 60 20 T J=25°C 40 hard switching 20 0 0 0 10 20 30 40 IC (A) 50 60 0 70 0.5 1 1.5 V F (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 0.8 Diode 0.9 0.7 0.6 0.5 0.4 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT50DSK120T3G – Rev 1 July, 2006 rectangular Pulse Duration (Seconds)