MICROSEMI APTGT75DH120TG

APTGT200DU60TG
VCES = 600V
IC = 200A @ Tc = 80°C
Dual common source
Trench + Field Stop IGBT®
Power Module
C1
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
C2
Q1
Q2
G1
G2
E1
E2
NTC2
E2
C1
E
C2
C2
E1
E2
NTC2
G1
G2
NTC1
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
600
290
200
400
±20
625
Tj = 150°C
400A @ 550V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
June, 2006
G2
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
APTGT200DU60TG – Rev 1
E
NTC1
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring
APTGT200DU60TG
All ratings @ Tj = 25°C unless otherwise specified
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 200A
Tj = 150°C
VGE = VCE , IC = 2 mA
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min
Test Conditions
VR=600V
IF = 200A
VGE = 0V
IF = 200A
VR = 300V
di/dt =2200A/µs
Er
5.0
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 200A
R G = 2Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 200A
R G = 2Ω
Tj = 25°C
VGE = ±15V
Tj = 150°C
VBus = 300V
IC = 200A
Tj = 25°C
R G = 2Ω
Tj = 150°C
Fall Time
Td(on)
Tr
Min
Reverse Recovery Energy
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1.5
1.7
5.8
Typ
12.3
0.8
0.4
115
45
225
Max
Unit
250
1.9
µA
6.5
400
V
nA
Max
Unit
V
nF
ns
55
130
50
ns
300
70
1
1.8
5.7
7
Min
600
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Typ
Typ
mJ
mJ
Max
250
500
200
1.6
1.5
130
225
9
19
2.3
4.7
Unit
V
µA
A
2
V
ns
µC
June, 2006
Symbol Characteristic
mJ
2-6
APTGT200DU60TG – Rev 1
Electrical Characteristics
APTGT200DU60TG
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
0.24
0.4
Unit
T: Thermistor temperature
Symbol Characteristic
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
50
3952

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

Thermal and package characteristics
RthJC
Min
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
M5
2500
-40
-40
-40
2.5
°C/W
V
175
125
100
4.7
160
°C
N.m
g
June, 2006
SP4 Package outline (dimensions in mm)
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3-6
APTGT200DU60TG – Rev 1
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APTGT200DU60TG
Typical Performance Curve
Output Characteristics (VGE =15V)
Output Characteristics
400
400
T J=25°C
350
300
TJ=125°C
250
TJ=150°C
IC (A)
IC (A)
300
200
150
100
0.5
1
1.5
VCE (V)
0
2
2.5
0
3
14
350
1
300
10
E (mJ)
250
200
TJ=125°C
2.5
3
3.5
Eoff
8
Er
6
4
100
TJ=150°C
2
50
T J=25°C
0
5
6
7
8
9
Eon
0
10
11
0
12
50
100 150 200 250 300 350 400
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
VCE = 300V
VGE =15V
IC = 200A
T J = 150°C
12
Reverse Bias Safe Operating Area
500
400
Eoff
IF (A)
16
E (mJ)
1.5
2
V CE (V)
VCE = 300V
VGE = 15V
RG = 2Ω
TJ = 150°C
12
T J=25°C
150
0.5
Energy losses vs Collector Current
Transfert Characteristics
400
IC (A)
VGE=9V
50
T J=25°C
0
VGE=15V
200
100
0
VGE =13V
250
150
50
VGE=19V
T J = 150°C
350
Eon
8
300
200
4
Eon
VGE =15V
T J=150°C
RG=2Ω
100
Er
0
0
0
2
4
6
8
10
12
Gate Resistance (ohms)
14
0
100
200
300 400
VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.15
IGBT
0.7
June, 2006
0.2
0.9
0.5
0.1
0.3
0.05
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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4-6
APTGT200DU60TG – Rev 1
Thermal Impedance (°C/W)
0.25
APTGT200DU60TG
Forward Characteristic of diode
400
100
ZVS
ZCS
80
VCE=300V
D=50%
RG=2Ω
TJ =150°C
350
300
250
Tc=85°C
IC (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
120
60
200
TJ =125°C
150
40
100
Hard
switching
20
T J=150°C
50
TJ =25°C
0
0
0
50
100
150
IC (A)
200
0
250
0.4
0.8
1.2
1.6
V F (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.45
0.4
Diode
0.9
0.35
0.3
0.25
0.7
0.5
0.2
0.15
0.1
0.05
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-6
APTGT200DU60TG – Rev 1
June, 2006
Rectangular Pulse Duration in Seconds
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6-6
APTGT200DU60TG – Rev 1
June, 2006
APTGT200DU60TG