PD -95190 IRG4PH50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package • Lead-Free VCES = 1200V VCE(on) typ. = 2.78V G @VGE = 15V, IC = 24A E n-cha nn el Benefits • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. Units 1200 45 24 180 180 16 180 ± 20 200 78 -55 to + 150 V A V W °C 300 (0.063 in. (1.6mm) from case ) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. Typ. Max. ––– ––– ––– ––– ––– ––– ––– 0.24 ––– 6 (0.21) 0.64 0.83 ––– 40 ––– Units °C/W g (oz) 1 04/26/04 IRG4PH50UDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown VoltageS 1200 — — V Temperature Coeff. of Breakdown Voltage — 1.20 — V/°C Collector-to-Emitter Saturation Voltage — 2.56 3.5 — 2.78 3.7 — 3.20 — V — 2.54 — Gate Threshold Voltage 3.0 — 6.0 Temperature Coeff. of Threshold Voltage — -13 — mV/°C Forward Transconductance T 23 35 — S Zero Gate Voltage Collector Current — — 250 µA — — 6500 Diode Forward Voltage Drop — 2.5 3.5 V — 2.1 3.0 Gate-to-Emitter Leakage Current — — ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0mA IC = 20A VGE = 15V IC = 24A See Fig. 2, 5 IC = 45A IC = 24A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 250µA VCE = 100V, IC = 24A VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 150°C IC = 16A See Fig. 13 IC = 16A, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb 2 Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 160 27 53 47 24 110 180 2.10 1.50 3.60 46 27 240 330 6.38 13 3600 160 31 90 164 5.8 8.3 260 680 120 76 Max. Units Conditions 250 IC = 24A 40 nC VCC = 400V See Fig. 8 80 VGE = 15V — TJ = 25°C — ns IC = 24A, VCC = 800V 170 VGE = 15V, RG = 5.0Ω 260 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 18 4.6 — TJ = 150°C, See Fig. 11, 18 — ns IC = 24A, VCC = 800V — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 135 ns TJ = 25°C See Fig. 245 TJ = 125°C 14 IF = 16A 10 A TJ = 25°C See Fig. 15 TJ = 125°C 15 VR = 200V 675 nC TJ = 25°C See Fig. 16 di/dt = 200A/µs 1838 TJ = 125°C — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 www.irf.com IRG4PH50UDPbF 30 F o r b o th : LOAD CURRENT (A) 25 D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T sink = 9 0 ° C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 40 W 20 S q u a re w a v e : 6 0% of rate d volta ge 15 I 10 Id e a l d io d e s 5 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 100 100 TJ = 150 o C 10 TJ = 25 o C V = 15V 20µs PULSE WIDTH GE 1 I C, Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 1000 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com TJ = 150 o C 10 TJ = 25 o C V = 50V 5µs PULSE WIDTH CC 1 5 6 7 8 9 10 11 12 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4PH50UDPbF 4.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 50 40 30 20 10 0 25 50 75 100 125 150 V = 15V 80 us PULSE WIDTH IC = 48 A GE 3.5 IC = 24 A 3.0 IC = 12 A 2.5 2.0 -60 -40 -20 T C , Case Temperature ( ° C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 0.00001 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PH50UDPbF VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 6000 5000 Cies 4000 3000 2000 C oes 1000 Cres 0 1 10 20 VGE , Gate-to-Emitter Voltage (V) 7000 12 8 4 VCE , Collector-to-Emitter Voltage (V) Total Switching Losses (mJ) Total Switching Losses (mJ) Total Switching Losses ( mJ) 100 4.20 3.80 3.40 0 10 20 30 40 RG , Gate Resistance (Ohm) Ω Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 40 80 120 160 200 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 480V V GE = 15V TJ = 25 ° C 25A 4.60 I C = 24A 3.00 0 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 5.00 VCC = 400V I C = 24A 16 0 100 50 5.0Ω RG = Ohm VGE = 15V VCC = 800V IC = 48 A 10 IC = 24 A IC = 12 A 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PH50UDPbF RG TJ VCC 12 VGE = Ohm 5.0 Ω = 150 °C = 480V = 15V 1000 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 15 VGE = 20V T J = 125 oC 100 9 6 3 0 0 10 20 30 40 50 10 SAFE OPERATING AREA 1 I C , Collector-to-emitter Current (A) 1 10 100 1000 10000 VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Instantaneous Forward Current ( A ) 1000 100 T J = 150°C 10 T J = 125°C T J = 25°C 1 0.0 2.0 4.0 6.0 8.0 F orward V oltage D rop - V F M (V ) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PH50UDPbF 300 40 VR = 200 V T J = 125°C T J = 25°C VR = 200V T J = 125°C T J = 25°C 30 200 I R R M - (A ) trr - (ns) IF = 3 2 A I F = 1 6A I F = 8 .0 A I F = 32A 20 I F = 16 A 100 I F = 8 .0A 10 0 100 d i f /dt - (A /µ s) 0 100 1000 di f /dt - (A /µ s) 1000 Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 1200 1000 VR = 200V T J = 125°C T J = 25°C VR = 200V T J = 125°C T J = 25°C 900 600 di(rec)M /dt - (A /µ s) Q R R - (nC ) I F = 32 A I F = 1 6A I F = 8.0A 100 I F = 32 A I F =1 6A I F = 8 .0 A 300 0 100 di f /dt - (A /µ s) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com 1000 10 100 di f /d t - (A /µ s) 1000 Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PH50UDPbF Same ty pe device as D .U.T. 90% 430µF 80% of Vce 10% Vge D .U .T. VC 90% td(off) 10% IC 5% tf tr Fig. 18a - Test Circuit for Measurement of t d(on) t=5µs ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Eon Eoff E ts = (Eon +Eoff ) Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g trr Ic Q rr = D UT VO LTAG E AN D CU RRE NT Vce 1 0 % Ic Ip k 9 0 % Ic tr td (o n ) V pk 1 0 % Irr V cc Irr Ic D IO D E R E C O V E R Y W A V E FO R M S 5% Vce t1 t2 ce ieIcd t dt E o n = VVce t1 ∫ t2 E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ +Vg tx 10% Vcc Vcc trr id t Icddt tx t4 V d id d t t3 ∫ Vd Ic dt t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4PH50UDPbF V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* RL= 0 - 800V 800V 4 X I C @25°C 50V 600 0µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 20. Pulsed Collector Current Test Circuit 9 IRG4PH50UDPbF Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNAT IONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/