AGILENT AT

Up to 4 GHz Linear Power
Silicon␣ Bipolar Transistor
Technical Data
AT-64020
Features
Description
• High Output Power:
27.5 dBm Typical P1 dB at 2.0␣ GHz
26.5 dBm Typical P1 dB at 4.0␣ GHz
The AT-64020 is a high performance NPN silicon bipolar
transistor housed in a hermetic
BeO disk package for good
thermal characteristics. This
device is designed for use in
medium power, wide band
amplifier and oscillator applications operating over VHF, UHF
and microwave frequencies.
• High Gain at 1 dB
Compression:
10.0 dB Typical G1 dB at 2.0␣ GHz
6.5 dB Typical G1 dB at 4.0␣ GHz
• 35% Total Efficiency
• Emitter Ballast Resistors
• Hermetic, Metal/Beryllia
Package
200 mil BeO Package
Excellent device uniformity,
performance and reliability are
produced by the use of ionimplantation, self-alignment
techniques, and gold metallization
in the fabrication of these devices.
The use of ion-implanted ballast
resistors ensures uniform current
distribution through the multiple
emitter fingers.
4-179
5965-8915E
AT-64020 Absolute Maximum Ratings
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation [2,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
W
°C
°C
Absolute
Maximum[1]
2
40
20
200
3
200
-65 to 200
Thermal Resistance [2,4]:
θjc = 40°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 25 mW/°C for TC > 80°C.
4. The small spot size of this technique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions[1]
Units
Min.
|S21E|2
Insertion Power Gain; VCE = 16 V, IC = 110 mA
f = 2.0 GHz
f = 4.0 GHz
dB
P1 dB
Power Output @ 1 dB Gain Compression
VCE = 16 V, IC = 110 mA
1 dB Compressed Gain; VCE = 16 V, IC = 110 mA
f = 2.0 GHz
f= 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
dBm
26.5
dB
8.5
ηT
Total Efficiency at 1 dB Compression:
VCE = 16 V, IC = 110 mA
f = 4.0 GHz
%
hFE
ICBO
IEBO
Forward Current Transfer Ratio; VCE = 8 V, IC = 110 mA
Collector Cutoff Current; VCB = 16 V
Emitter Cutoff Current; VEB = 1 V
G1 dB
Note:
1. ηT = (RF Output Power)/(RF Input Power + VCE I C).
4-180
—
µA
µA
Typ. Max.
7.0
2.0
27.5
26.5
10.0
6.5
35.0
20
50
200
100
5.0
AT-64020 Typical Performance, TA = 25°C
30
15
30
POUT
25
27
150 mA
110 mA
70 mA
26
25
1.0
2.0
3.0
9
6
3
1.0
4.0
FREQUENCY (GHz)
150 mA
110 mA
70 mA
2.0
3.0
20
40
ηT
15
30
10
20
5
10
0
4.0
0
0
5
FREQUENCY (GHz)
Figure 1. Power Output @ 1 dB Gain
Compression vs. Frequency and
Collector Current. VCE = 16 V.
10
15
20
25
POWER IN (dBm)
Figure 2. 1 dB Compressed Gain vs.
Frequency and Collector Current.
VCE= 16 V.
Figure 3. Output Power and Efficiency
vs. Input Power.
VCE = 16 V, IC = 110mA, f = 4.0 GHz.
35
30
MSG
GAIN (dB)
25
20
MAG
15
MSG
|S21E|2
10
5
0
0.1
0.3 0.5
1.0
3.0 5.0
FREQUENCY (GHz)
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VCE = 16 V, IC = 110 mA.
Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 16 V, IC␣ =␣ 110 mA
Freq.
GHz
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Mag.
.61
.75
.75
.74
.74
.73
.73
.74
.73
.72
.71
S11
Ang.
-116
-173
171
159
148
141
130
119
107
93
79
dB
30.0
18.4
12.5
9.2
7.0
5.2
3.8
2.7
1.8
0.9
0.1
S21
Mag.
31.51
8.27
4.23
2.90
2.23
1.82
1.56
1.37
1.23
1.11
1.01
Ang.
130
86
66
50
35
26
12
-2
-16
-30
-43
A model for this device is available in the DEVICE MODELS section.
4-181
dB
-33.1
-28.8
-27.4
-23.5
-21.6
-19.8
-17.5
-16.1
-14.7
-13.3
-11.8
S12
Mag.
.022
.036
.043
.067
.083
.103
.133
.157
.186
.217
.256
S22
Ang.
57
41
49
48
46
47
41
35
26
18
8
Mag.
.67
.23
.20
.21
.25
.27
.32
.35
.38
.41
.42
Ang.
-48
-88
-100
-110
-120
-127
-135
-146
-158
-168
179
EFFICIENCY (%)
28
POWER OUT (dBm)
12
G1 dB (dB)
P1 dB (dBm)
29
200 mil BeO Package Dimensions
4
EMITTER
.300 ± .025
7.62 ± .64
45°
.030
.76
3
1
COLLECTOR
BASE
NO REFERENCE
EMITTER
2
.060
1.52
.048 ± .010
1.21 ± .25
.128
3.25
.205
5.21
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
3. Base of package is
electrically isolated.
.004 ± .002
.10 ± .05
.023
.57
4-182