BUZ76A Semiconductor Data Sheet 2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2265.1 Features • 2.6A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 2.500Ω (BUZ76 field effect transistor designed for applications such as • SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Sub• Nanosecond Switching Speeds relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ject • Linear Transfer Characteristics (2.6A, This type can be operated directly from integrated circuits. • High Input Impedance 400V, Formerly developmental type TA17404. • Majority Carrier Device 2.500 Ordering Information • Related Literature Ohm, - TB334 “Guidelines for Soldering Surface Mount PACKAGE BRAND N-Chan- PART NUMBER Components to PC Boards” BUZ76A TO-220AB BUZ76A nel Power NOTE: When ordering, use the entire part number. Symbol MOSD FET) /Author G () /KeyS words (Harris Semiconduc- Packaging tor, NJEDEC TO-220AB Channel SOURCE DRAIN Power GATE DRAIN (FLANGE) MOSFET, TO220AB) /Creator () /DOCIN FO pdfmark [ /PageMode /Use- 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ76A TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current (TC = 30oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg BUZ76A 400 400 2.6 10 ±20 40 0.32 -55 to 150 E 55/150/56 UNITS V V A A V W W/oC oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 400 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA 2.1 3 4 V Zero Gate Voltage Drain Current TJ = 25oC, VDS = 400V, VGS = 0V TJ = 125oC, VDS = 400V, VGS = 0V - 20 250 µA - 100 1000 µA VGS = 20V, VDS = 0V - 10 100 nA rDS(ON) ID = 1.5A, VGS = 10V (Figure 8) - 2.2 2.500 Ω gfs VDS = 25V, ID = 1.5A (Figure 11) 2.1 2.5 - S - 15 20 ns - 40 60 ns - 50 65 ns IDSS Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time VCC = 30V, ID ≈ 2.4A, VGS = 10V, RGS = 50Ω, RL = 10Ω. (Figures 14, 15) td(OFF) Fall Time tf - 30 40 ns - 300 500 pF COSS - 50 80 pF CRSS - 35 60 Input Capacitance CISS Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) pF Thermal Resistance Junction to Case RθJC ≤ 3.1 oC/W Thermal Resistance Junction to Ambient RθJA ≤ 75 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulsed Source to Drain Current ISDM Source to Drain Diode Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge QRR TEST CONDITIONS TC = 25oC TC = 25oC TJ = 25oC, ISD = 5.2A, VGS = 0V TJ = 25oC, ISD = 2.6A, dISD/dt = 100A/µs, VR = 100V MIN TYP MAX UNITS - - 2.6 A - - 10 A - 1.1 1.4 V - 300 - ns - 2.5 - µC NOTES: 2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 2 BUZ76A Typical Performance Curves Unless Otherwise Specified 4 VGS 10V 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 3 2 1 0.2 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 0 150 ZθJC, TRANSIENT THERMAL IMPEDANCE FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 0 50 100 TC, CASE TEMPERATURE (oC) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 0.5 1 0.2 0.1 0.1 PDM 0.05 0.02 0.01 0 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 0.01 10-5 10-1 10-3 10-2 t, RECTANGULAR PULSE DURATION (S) 10-4 100 101 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 6 TJ = MAX RATED TC = 25oC 101 rDS(ON) = VDS/ID 1.5µs 10µs 100µs 100 10-1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1ms 10ms 100ms DC 10-2 100 101 102 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 3 103 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 102 PD = 40W VGS = 20V 10V 8V 7V 4 PULSE DURATION = 80µs TJ = 25oC VGS = 5.0V 6.5V 6V 5.5V VGS = 4.5V 2 VGS = 4.0V 0 0 20 40 60 80 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. OUTPUT CHARACTERISTICS 100 BUZ76A Unless Otherwise Specified (Continued) 6 8 PULSE DURATI0N = 80µs VDS = 25V TJ = 25oC 5 PULSE DURATION = 80µs rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) Typical Performance Curves 4 3 2 1 0 5 VGS, GATE TO SOURCE VOLTAGE (V) 5.5V 4 6V 6.5V 20V 2 0 10 FIGURE 6. TRANSFER CHARACTERISTICS 2 0 50 100 3 2 1 0 150 -50 TJ, JUNCTION TEMPERATURE (oC) 5 gfs, TRANSCONDUCTANCE (S) 100 CISS COSS CRSS 10-2 0 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 4 50 100 150 FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE VGS = 0, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS 10-1 0 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 101 6 VDS = VGS, ID = 1mA 4 -50 2 4 ID, DRAIN CURRENT (A) 4 PULSE DURATION = 80µs ID = 1.5A VGS = 10V 6 0 0 7V 7.5V 8V FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT GATE THRESHOLD VOLTAGE 8 rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) 6 9V 10V 0 C, CAPACITANCE (nF) VGS = 5V PULSE DURATION = 80µs VDS = 25V TJ = 25oC 4 3 2 1 0 0 1 2 3 ID, DRAIN CURRENT (A) 4 FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 5 BUZ76A 101 Unless Otherwise Specified (Continued) 15 PULSE DURATION = 80µs 100 TJ = 150oC TJ = 25oC 10-1 10-2 0 ID = 4.5A VGS, GATE TO SOURCE VOLTAGE (V) ISD , SOURCE TO DRAIN CURRENT (A) Typical Performance Curves 0.5 1.0 1.5 VSD, SOURCE TO DRAIN VOLTAGE (V) 10 VDS = 80V VDS = 320V 5 0 2.0 0 5 15 10 20 25 Qg(TOT) , TOTAL GATE CHARGE (nC) FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 14. SWITCHING TIME TEST CIRCUIT 0.2µF 50% PULSE WIDTH 10% FIGURE 15. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 16. GATE CHARGE TEST CIRCUIT 5 Ig(REF) 0 FIGURE 17. GATE CHARGE WAVEFORMS