BUZ60 Semiconductor Data Sheet 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET October 1998 File Number 2260.1 Features • 5.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 1.000Ω (BUZ60 field effect transistor designed for applications such as • SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Sub• Nanosecond Switching Speeds relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ject • Linear Transfer Characteristics (5.5A, This type can be operated directly from integrated circuits. • High Input Impedance 400V, Formerly developmental type TA17414. • Majority Carrier Device 1.000 Ordering Information • Related Literature Ohm, - TB334 “Guidelines for Soldering Surface Mount PACKAGE BRAND N-Chan- PART NUMBER Components to PC Boards” BUZ60 TO-220AB BUZ60 nel Power NOTE: When ordering, use the entire part number. Symbol MOSD FET) /Author G () /KeyS words (Harris Semiconduc- Packaging tor, NJEDEC TO-220AB ChanSOURCE nel DRAIN GATE Power DRAIN (FLANGE) MOSFET, TO220AB) /Creator () /DOCIN FO pdfmark [ /PageMode /Use- 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ60 TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current (TC = 35oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg BUZ60 400 400 5.5 22 ±20 75 0.6 -55 to 150 E 55/150/56 UNITS V V A A V W W/oC oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 400 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) Zero Gate Voltage Drain Current 2.1 3 4 V TJ = 25oC, VDS = 400V, VGS = 0V TJ = 125oC, VDS = 400V, VGS = 0V - 20 250 µA - 100 1000 µA VGS = 20V, VDS = 0V - 10 100 nA rDS(ON) ID = 2.5A, VGS = 10V (Figure 8) - 0.9 1 Ω gfs VDS = 25V, ID = 2.5A (Figure 11) 1.7 2.5 - S - 30 45 ns - 40 60 ns td(OFF) - 110 140 ns tf - 50 65 ns IDSS Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time VCC = 30V, ID ≈ 2.7A, VGS = 10V, RGS = 50Ω, RL = 10Ω. (Figures 14, 15) VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) - 1.5 2 pF - 120 180 pF - 35 60 pF Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Thermal Resistance Junction to Case RθJC ≤1.67 oC/W Thermal Resistance Junction to Ambient RθJA ≤75 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current Pulsed Source to Drain Current ISD TEST CONDITIONS TC = 25oC ISDM Source to Drain Diode Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge QRR MIN TYP MAX - - 5.5 A - - 22 A TJ = 25oC, ISD = 11A, VGS = 0V - 1.15 1.6 V TJ = 25oC, ISD = 5.5A, dISD/dt = 100A/µs, VR = 100V - 1000 - ns - 5 - µC NOTES: 2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 2 UNITS BUZ60 Unless Otherwise Specified 1.2 6 1.0 5 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 0.2 VGS ≥ 10V 4 3 2 1 0 0 25 125 50 75 100 TC , CASE TEMPERATURE (oC) 0 150 ZθJC, TRANSIENT THERMAL IMPEDANCE FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 1 0 50 100 TC, CASE TEMPERATURE (oC) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 0.5 0.2 0.1 PDM 0.05 0.02 0.01 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC SINGLE PULSE (THERMAL RESPONSE) 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 12 TJ = MAX RATED TC = 25oC 1µs 101 10µs 100µs 100 10-1 100 VGS = 20V 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1ms 10ms 100ms ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 102 8 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 3 103 VGS = 7.5V 8.0V 10V VGS = 7.0V VGS = 6.5V 6 VGS = 6.0V VGS = 5.5V 4 VGS = 5.0V 2 VGS = 4.5V DC 101 102 VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80µs PD = 75W 0 VGS = 4.0V 0 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. OUTPUT CHARACTERISTICS 40 BUZ60 10 Unless Otherwise Specified (Continued) 4 PULSE DURATION = 80µs VDS = 25V TJ = 25oC rDS(ON), ON-STATE RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) Typical Performance Curves 5 0 VGS = 5V 5 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80µs ID = 2.5A VGS = 10V 1.0 0.5 -50 0 50 100 150 1 0 2 4 gfs, TRANSCONDUCTANCE (S) C, CAPACITANCE (nF) CISS 100 VGS = 0, f = 1MHz CISS = CGS +CGD CRSS = CGD COSS = CDS +CGS COSS CRSS 40 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 4 12 VDS = VGS, ID = 1mA 3 2 1 0 -50 5 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 0 50 100 150 FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 101 0 4 6 8 ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 10-2 7V 7.5V 8V 9V 10V 20V TJ, JUNCTION TEMPERATURE (oC) 10-1 6.5V FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 1.5 0 6V 2 10 VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.0 5.5V 3 0 0 FIGURE 6. TRANSFER CHARACTERISTICS rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) PULSE DURATION = 80µs PULSE DURATION = 80µs VDS = 25V TJ = 25oC 4 3 2 1 0 0 5 ID, DRAIN CURRENT (A) FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 10 BUZ60 Typical Performance Curves 15 PULSE DURATION = 80µs 101 TJ = 150oC TJ = 25oC 100 10-1 0 ID = 8.3A VGS, GATE TO SOURCE VOLTAGE (V) ISD, SOURCE TO DRAIN CURRENT (A) 102 Unless Otherwise Specified (Continued) 0.5 1.0 1.5 2.0 2.5 VSD, SOURCE TO DRAIN VOLTAGE (V) 10 VDS = 80V VDS = 320V 5 0 3.0 0 10 30 20 40 50 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 14. SWITCHING TIME TEST CIRCUIT 0.2µF 50% PULSE WIDTH 10% FIGURE 15. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 16. GATE CHARGE TEST CIRCUIT 5 Ig(REF) 0 FIGURE 17. GATE CHARGE WAVEFORMS