TLP2601 TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC TLP2601 Isolated Line Receiver Simplex / Multiplex Data Transmission Computer−Peripheral Interface Microprocessor System Interface Digital Isolation For A/D, D/A Conversion Direct Replacement For HCPL−2601 Unit in mm The TOSHIBA TLP2601 a photocoupler which combines a GaAℓAs IRed as the emitter and an integrated high gain, high speed photodetector. The output of the detector circuit is an open collector, Schottky clamped transistor. A Faraday shield integrated on the photodetector chip reduces the effects of capacitive coupling between the input LED emitter and the high gain stages of the detector. This provides an effective common mode transient immunity of 1000V/µs. · Input current thresholds: IF = 5mA max. · Isolation voltage: 2500Vrms min. · Switching speed: 10MBd · Common mode transient immunity: 1000V/µs min. · Guaranteed performance over temp.: 0°C~70°C · UL Recognized: UL1577, file No. E67349 TOSHIBA Weight: 0.54g Pin Configuration (top view) Truth Table (positive logic) Input Enable Output H H L L H H H L H L L H 11−10C4 1 8 2 7 3 6 4 5 SHIELD Schematic IF 2 A 0.01 to 0.1µF bypass capacitor must be connected between pins 8 and 5 (see Note 1). VF ICC IO + 8 6 3 VCC VO SHIELD 5 IE GND 7 VE 1 2002-09-25 TLP2601 Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Input current, low level IFL 0 ¾ 250 µA Input current, high level IFH 6.3 (*) ¾ 20 mA Supply voltage, output VCC 4.5 ¾ 5.5 V High level enable voltage VEH 2.0 ¾ VCC V Low level enable voltage VEL 0 ¾ 0.8 V N ¾ ¾ 8 ¾ Topr 0 ¾ 70 °C Fan out (TTL load) Operating temperature (*) 6.3mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value is 5.0mA or less. Maximum Ratings (no derating required) Symbol Rating Unit Forward current IF 20 mA Reverse voltage VR 5 V Output current IO 25 mA Output voltage VO -0.5~7 V VCC 7 V VE 5.5 V Po 40 mW Operating temperature range Topr -40~85 °C Storage temperature range Tstg -55~125 °C Tsol 260 °C 2500 Vrms 3540 Vdc Detector LED Characteristic Supply voltage (1 minute maximum) Enable input voltage (not to exceed VCC by more than 500mV) Output collector power dissipation Lead solder temperature (10s) (**) Isolation voltage (R.H.≤ 60%,AC 1min., (Note 10) BVS (**) 1.6mm below seating plane. 2 2002-09-25 TLP2601 Electrical Characteristics (Ta = 0°C ~70°C unless otherwise noted) Characteristic Symbol Test Condition VCC = 5.5V, VO = 5.5V Min. Typ. Max. Unit ¾ 1 250 mA ¾ 0.4 0.6 V ¾ 7 15 mA ¾ 12 19 mA High level output current IOH Low level output voltage VOL High level supply current ICCH Low level supply current ICCL Low level enable current IEL VCC = 5.5V, VE = 0.5V ¾ -1.6 -2.0 mA High level enable current IEH VCC = 5.5V, VE = 2.0V ¾ -1 ¾ mA High level enable voltage VEH 2.0 ¾ ¾ Low level enable voltage VEL ¾ ¾ 0.8 Input forward voltage VF IF = 10mA, Ta = 25℃ ¾ 1.65 1.75 V BVR IR = 10mA, Ta = 25℃ 5 ¾ ¾ V CIN VF = 0, f = 1MHz ¾ 45 ¾ pF IF = 10mA ¾ -2.0 ¾ mV / °C II-O Relative humidity = 45% Ta=25℃, t = 5 second VI-O = 3000Vdc, (Note 10) ¾ ¾ 1 mA Resistance (input-output) RI-O VI-O = 500V, R.H.≤ 60% (Note 10) 5×1010 1014 ¾ W Capacitance (input-output) CI-O f = 1MHz, ¾ 0.6 ¾ pF IF = 250mA, VE = 2.0V VCC = 5.5V, IF = 5mA VE = 2.0V, IOL(sinking) = 13mA VCC = 5.5V, IF = 0, VE = 0.5V VCC = 5.5V, IF = 10mA VE = 0.5V (Note 11) V Input reverse breakdown voltage Input capacitance Input diode temperature coefficient Input-output insulation leakage current ∆VF/∆TA ¾ (Note 10) (**)All typ.values are at VCC = 5V, Ta = 25°C. 3 2002-09-25 TLP2601 Switching Characteristics (Ta = 25℃ ℃, VCC = 5 V) Characteristic Propagation delay time to high output level Propagation delay time to low output level Symbol tpHL tr Output fall time(90-10%) tf enable from VEH to VEL Propagation delay time of enable from VEL to VEH Test Condition tpLH Output rise time(10-90%) Propagation delay time of Test Circuit RL = 350Ω, CL = 15pF IF = 7.5mA 1 (Note 2), (Note 3), (Note 4)&(Note 5) RL = 350Ω, CL = 15pF tELH IF = 7.5mA 2 Min. Typ. Max. Unit ― 60 75 ns ― 60 75 ns ― 30 ― ns ― 30 ― ns ― 25 ― ns ― 25 ― ns 1000 10000 ― V/µs -1000 -10000 ― V/µs VEH = 3.0V VEL = 0.5V tEHL (Note 6)&(Note 7) VCM = 400V Common mode transient immunity at high output RL = 350Ω CMH VO(min.) = 2V level IF = 0mA, 3 (Note 9) VCM = 400V Common mode transient immunity at low output RL = 350Ω CML VO(max.) = 0.8V level IF = 7.5mA, 4 (Note 8) 2002-09-25 TLP2601 Test Circuit 1. 5V Pulse generator ZO = 50W tr = 5ns IF = 7.5mA Input IF IF = 3.75mA tpHL IF Monitoring node 1.5V VOL 8 VCC 2 7 3 6 4 47W VOH tpLH Output VO 1 5 GND 0.1mF Bypass tpHL and tpLH RL VO (*) CL Output monitoring node (*) CL is approximately 15pF which includes probe and stray wiring capacitance. Test Circuit 2. Pulse generator ZO = 50 W tr = 5ns 3.0V Input VE 7.5mA dc IF 1.5V tEHL VOH tELH Output VO 1.5V Input VE monitoring node 5V 1 VCC 8 2 7 3 6 4 5 GND 0.1mF Bypass tELH and tEHL (*) CL VOL RL VO Output monitoring node (*) CL is approximately 15pF which includes probe and stray wiring capacitance. Test Circuit 3. Transient Immunity and Typ. Waveforms. 90% VCM 10% 10% 90% tr tf IF 0V A B 5V VO VFF Switch at A : IF = 0mA VO VCC 8 2 7 3 6 4 Pulse gen. ZO = 50 W GND 5V 0.1mF Bypass 1 400V RL VO 5 VCM VOL Switch at B : IF = 5mA 5 2002-09-25 TLP2601 IF – VF DVF / DTa – IF -2.6 Forward voltage temperature coefficient DVF /DTa (mV/°C) Ta = 25°C 10 forward current IF (mA) 100 1 0.1 1.2 1.4 -2.0 -1.8 -1.6 VF (V) IF = 250mA High level output current IOH (mA) 6 RL=350W 1kW 4kW 2 3 Forward current 30 (mA) 100 VCC = 5V Ta = 25°C 2 IF IOH – Ta VO – IF 1 10 3 Forward current (V) 8 4 1 0.3 1.8 1.6 Forward voltage Output voltage VO -2.2 -1.4 0.1 0.01 1.0 0 0 -2.4 4 IF 5 50 VCC = 5.5V 30 VO = 5.5V 10 5 3 6 1 (mA) 0 10 20 30 40 50 60 70 Ambient temperature Ta (°C) VOL – Ta VO – IF 8 IF = 5mA 0.5 RL=350W 6 Low level output voltage VOL (V) Output voltage VO (V) VCC = 5V RL=4kW Ta = 70°C 4 0°C 2 0 0 1 2 3 Forward current 4 IF 5 VCC = 5.5V VE = 2V IOL=16mA 0.4 12.8mA 9.6mA 6.4mA 0.3 6 0.2 (mA) 0 20 40 60 80 Ambient temperature Ta (°C) 6 2002-09-25 TLP2601 tpHL, tpLH – IF tpHL, tpLH – Ta 120 120 tpLH RL= 4kW RL=4kW tpLH 100 tpLH 80 1kW 350W tpLH tpHL 60 Propagation delay time tpHL, tpLH (ns) Propagation delay time tpHL, tpLH (ns) 100 350W 1kW 4kW 40 tpLH 80 350W 60 1kW tpHL 4kW 40 Ta = 25°C 20 5 9 7 11 13 Forward current 15 IF IF = 7.5mA 19 17 VCC = 5 V 20 VCC = 5V 0 350W 1kW 0 0 (mA) 10 20 30 40 50 60 70 60 70 Ambient temperature Ta (°C) tEHL, tELH – Ta tr, tf – Ta 320 80 VCC = 5V IF = 7.5mA 70 RL= 4kW tf 280 1kW tf 60 350W tf 40 350W tr 20 0 0 VEH = 3V RL= 4kW tELH IF = 7.5mA 60 80 Enable propagation delay time tEHL, tELH (ns) Rise, fall time tr, tf (ns) 300 VCC = 5V 1kW 4kW 10 20 30 40 50 60 50 40 1kW tELH 30 350W tELH 350W 20 70 tEHL 1kW 4kW 10 Ambient temperature Ta (°C) 0 0 10 20 30 40 50 Ambient temperature Ta (°C) 7 2002-09-25 TLP2601 Notes 1. The VCC supply voltage to each TLP2601 isolator must be bypassed by a 0.1µF capacitor of larger.This can be either a ceramic or solid tantalum capacitor with good high frequency characteristic and should be connected as close aspossible to the package VCC and GND pins of each device. 2. tpHL ･ Propagation delay is measured from the 3.75mA level on the low to high transition of the input current pulse to the 1.5V level on the high to low transition of the output voltage pulse. 3. tpLH ･ Propagation delay is measured from the 3.75mA level on the high to low transition of the input current pulse to the 1.5V level on the low to high transition of the output voltage pulse. 4. tf ･ Fall time is measured from the 10% to the 90% levels of the high to low transition on the output pulse. 5. tr ･ Rise time is measured from the 90% to 10% levels of the low to high transition on the output pulse. 6. tEHL ･ Enable input propagation delay is measured from the 1.5V level on the low to high transition of the input voltage pulse to the 1.5V level on the high to low transition of the output voltage pulse. 7. tELH ･ Enable input propagation delay is measured from the 1.5V level on the high to low transition of the input voltage pulse to the 1.5V level on the low to high transition of the output voltage pulse. 8. CML ･ The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the low output state (i.e., VOUT < 0.8V). Measured in volts per microsecond (V / µs). 9. CMH ･ The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the high state (i.e., VOUT > 2.0V). Measured in volts per microsecond(V / µs). Volts/microsecond can be translated to sinusoidal voltages: V / µs = (dv CM ) = fCM VCM (p.p.) dt Max. Example: VCM = 318Vpp when fCM = 1MHz using CML and CMH = 1000V / µs data sheet specified minimum. 10. ･ Device considered a two-terminal device: Pins 1, 2, 3 and 4 shorted together, and Pins 5, 6, 7 and 8 shorted together. 11. Enable input ･ No pull up resistor required as the device has an internal pull up resistor. 8 2002-09-25 TLP2601 RESTRICTIONS ON PRODUCT USE 000707EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 9 2002-09-25