Previous Datasheet Index Next Data Sheet Bulletin I25200/A ST3230C..R SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features 3360A Double side cooling High surge capability High mean current Fatigue free Typical Applications DC motor controls Controlled DC power supplies AC controllers (R-PUK) Major Ratings and Characteristics Parameters IT(AV) @ TC IT(AV) @ Ths 2785 A 80 °C 3360 A 55 °C A 25 °C @ 50Hz 61200 A @ 60Hz 64000 A @ 50Hz 18730 KA2s @ 60Hz 17000 KA2s 1000 to 1800 V @ Ths I 2t Units 5970 IT(RMS) ITSM ST3230C..R V DRM /V RRM tq typical 500 µs TJ max. 125 °C D-425 To Order Previous Datasheet Index Next Data Sheet ST3230C..R Series ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM , max. repetitive VRSM , maximum non- I DRM /I RRM max. Code peak and off-state voltage V repetitive peak voltage V @ TC = 125°C 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 Type number ST3230C..R mA 250 On-state Conduction Parameter ST3230C..R Max. average on-state current 2785 (1720) A 80 °C 180° conduction, half sine wave 3360 (1360) A double side (single side [anode side]) cooled 55 (85) °C I T(RMS) Max. RMS on-state current 5970 A I TSM Max. peak, one-cycle 61200 t = 10ms No voltage non-repetitive surge current 64000 t = 8.3ms reapplied t = 10ms 50% VRRM I T(AV) @ Case temperature I T(AV) Max. average on-state current @ Heatsink temperature A 49000 I2 t Maximum I2t for fusing Units reapplied Sinusoidal half wave, 18730 t = 10ms No voltage Initial TC = 125°C t = 8.3ms reapplied KA2s 10920 t = 10ms 50% VRRM t = 8.3ms reapplied 0.92 V TJ = TJ max. 0.09 mΩ TJ = TJ max. Max. value of on-state slope resistance DC @ 25°C heatsink temperature double side cooled t = 8.3ms 12000 V T(TO) Max. value of threshold voltage 12 51300 17000 rt Conditions V TM Max. on-state voltage 1.3 V IL Typical latching current 300 mA I = 2900A, TC = 25°C pk T J = 25°C, V D = 5V Switching Parameter di/dt Max. repetitive 50Hz (no repetitive) rate of rise of turned-on current t d Maximum delay time 2222222222222 ST3230C..R 150 (300) Units Conditions A/µs q Typical turn-off time r to 1A, TJ = TJ max. Gate drive 30V, 15Ω, V = 67% VDRM, TJ = 25°C d 4.5 µs t From 67% VDRM to 1000A gate drive 10V, 5Ω, t = 0.5µs Rise time 0.5µs IT = 1000A, t = 1ms, TJ = TJ max, VRM = 50V, p 500 dIRR/dt = 2A/µs, VDR = 67% VDRM, dvDR/dt = 8V/µs linear D-426 To Order Previous Datasheet Index Next Data Sheet ST3230C..R Series Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Voltage Drop Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current D-429 To Order Previous Datasheet Index ST3230C..R Series Fig. 7 - Stored Charged Fig. 8 - Thermal Impedance Z thJ-C Characteristics Fig. 9 - Gate Characteristics D-430 To Order Next Data Sheet Previous Datasheet Index Next Data Sheet ST3230C..R Series Blocking Parameter ST3230C..R Units Conditions dv/dt Maximum linear rate of rise of off-state voltage 500 V/µs TJ = TJ max. to 67% rated VDRM IRRM IDRM Max. peak reverse and off-state leakage current 250 mA TJ = 125°C rated V DRM/V RRM applied ST3230C..R Units Triggering Parameter 150 Conditions PGM Maximum peak gate power PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 30 VGM Max. peak positive gate voltage 30 V Anode positive with respect to cathode -VGM Max. peak negative gate voltage 0.25 V Anode negative with respect to cathode IGT Maximum DC gate current 400 mA TC = 25°C, VDRM = 5V 4 V TC = 25°C, VDRM = 5V 0.25 V TC = 125°C ST3230C..R Units Conditions required to trigger VGT Maximum gate voltage required to trigger VGD DC gate voltage not to trigger t = 100µs W A p Anode positive with respect to cathode Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter TJ max. Max. operating temperature T stg RthJ-C Rth(C-h) F Max. storage temperature range On-state (conducting) Thermal resistance, junction 0.019 0.0095 Thermal resistance, case 0.004 to heatsink 0.002 Approximate weight Case style °C -55 to 125 to case Mounting force ± 10% wt 125 DC operation single side cooled K/W K/W 43000 N (4400) (Kg) 1600 g DC operation double side cooled Single side cooled Double side cooled (R-PUK) Clamping force 43KN with mounting compound See Outline Table ∆RthJ-C Conduction (The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC) Conduction angle Single side Double side 180° 0.0010 0.0010 120° 0.0017 0.0017 60° 0.0044 0.0044 D-427 3333 To Order Units Conditions TJ = TJ max. K/W 23 Previous Datasheet Index Next Data Sheet ST3230C..R Series Ordering Information Table Device Code ST 323 1 2 0 C 18 R 1 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - R = Puk Case 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 12 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard selection) L = 1000V/µsec (Special selection) Outline Table 112.5 (4.4) DIA. MAX. 73.2 (2.9) DIA. MAX. 3 7.7 (1.5 ) M A X . TWO PLACES GATE 1.5 (0.06) DIA. ANODE HOLE 1.5 (0.06) DIA. MAX. 4.76 (0.2) 2222222222222 CATHODE 20° ± 5° 6 .3 (0 .2 4 ) (R-PUK) All dimensions in millimeters (inches) 3.7 (0.15) DIA. NOM. X 2.1 (0.1) DEEP MIN. BOTH ENDS D-428 To Order