VISHAY TSDF04040X

TSDF04040X/TSDF04040XR
Vishay Semiconductors
Dual - MOSMIC®– two AGC Amplifiers for TV–Tuner
Prestage with 5 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in
UHF-and VHF- tuner with 5 V supply voltage.
Typical Application
Features
2 (TSDF04040X)
5 (TSDF04040XR)
AGC
Two AGC amplifiers in a single package
RFC
C
G2 (common)
C
1 G1
RF in
AMP1
D 3
+5 V
Easy Gate 1 switch-off with PNP switching
transistors inside PLL
RF out
Integrated gate protection diodes
C
Low noise figure
+5 V
RG1
C
6 G1
RF in
RG1
TY
CW
1
High gain, very high forward transadmittance
(40 mS typ.)
AMP2
D 4
RF out
Biasing network on chip
C
Improved cross modulation at gain reduction
S (common)
+5 V
6
+5 V
RFC
5
5 (TSDF04040X)
2 (TSDF04040XR)
High AGC-range with less steep slope
16607
4
6
TY
WC7
2
3
TSDF04040X Marking: WC7
Plastic case (SOT 363)
1 = Gate 1 (amplifier 1), 2 = Gate 2,
3 = Drain (amplifier 1), 4 = Drain (amplifier 2),
5 = Source, 6 = Gate1 (amplifier 2)
SMD package, reverse pinning possible
CW
16608
1
5
4
W7C
2
3
16609
TSDF04040XR Marking: W7C
Plastic case (SOT 363)
1 = Gate 1 (amplifier 1), 2 = Source,
3 = Drain (amplifier 1), 4 = Drain (amplifier 2),
5 = Gate 2, 6 = Gate1 (amplifier 2)
T = Telefunken
Y = Year, is variable for digit from 0 to 9 (e.g. 0 = 2000, 1 = 2001)
CW = Calendar Week, is variable for number from 01 to 52
Number of Calendar Week is always indicating place of pin 1
Document Number 85090
Rev. 1, 12–Nov–01
www.vishay.com
1 (4)
TSDF04040X/TSDF04040XR
Vishay Semiconductors
All of following data and characteristics are valid for operating either
amplifier 1 (pin 1, 3, 2, 5) or amplifier 2 (pin 6, 4, 2, 5)
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Tamb 60 °C
Symbol
VDS
ID
±IG1/G2SM
+VG1/±VG2SM
-VG1SM
Ptot
TCh
Tstg
Value
8
30
10
6
1.5
200
150
–55 to +150
Unit
V
mA
mA
V
V
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25°C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35µm Cu
Symbol
RthChA
Value
450
Unit
K/W
Electrical DC Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Drain - source
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain - source
operating current
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
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Test Conditions
ID = 10 µA, VG1S = VG2S = 0
Symbol
V(BR)DSS
Min.
12
+IG1S = 10 mA, VG2S = VDS = 0
+V(BR)G1SS
±IG2S = 10 mA, VG2S = VDS = 0
±V(BR)G2SS
Typ.
Max.
Unit
V
7
10
V
7
10
V
+VG1S = 5 V, VG2S = VDS = 0
+IG1SS
20
nA
±VG2S = 5 V, VG1S = VDS = 0
±IG2SS
20
nA
20
mA
1.3
V
1.4
V
VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 k
IDSO
10
VDS = 5 V, VG2S = 4, ID = 20 µA
VG1S(OFF)
0.5
VDS = VRG1 = 5 V, RG1 = 56 k, ID = 20 µA
VG2S(OFF)
0.8
15
1.0
Document Number 85090
Rev. 1, 12–Nov–01
TSDF04040X/TSDF04040XR
Vishay Semiconductors
Electrical AC Characteristics
VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 k, ID = IDSO, f = 1 MHz, Tamb = 25°C, unless otherwise specified
Parameter
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
Power gain
AGC range
Noise figure
Noise figure
Cross modulation
Cross modulation
Test Conditions
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
GS = 3,3 mS, GL = 1 mS, f = 800 MHz
VDS = 5 V, VG2S = 1 to 4 V, f = 800 MHz
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
GS = 3.3 mS, GL = 1 mS, f = 800 MHz
Input level for k = 1 % @ 0 dB AGC
fw = 50 MHz, funw = 60 MHz
Input level for k = 1 % @ 40 dB AGC
fw = 50 MHz, funw = 60 MHz
Symbol
y21s
Cissg1
Crss
Coss
Gps
Gps
∆Gps
F
F
Xmod
Min.
35
Xmod
100
18
Typ.
40
2.4
30
1.5
28
24
45
1
1.3
90
105
Max.
50
2.8
40
Unit
mS
pF
fF
pF
dB
dB
dB
dB
dB
dBµV
dBµV
Dimensions of TSDF04040X/TSDF04040XR in mm
14280
Document Number 85090
Rev. 1, 12–Nov–01
www.vishay.com
3 (4)
TSDF04040X/TSDF04040XR
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their
use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs
listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances
and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 85090
Rev. 1, 12–Nov–01