INFINEON Q62702

BAT 165
Silicon Schottky Diode
Preliminary data
• Low-power Schottky rectifier diode
• Miniature plastic package for surface
2
mounting (SMD)
1
VPS05176
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Ordering Code
Pin Configuration
Package
BAT 165
White/C
Q62702-A1190
1=C
SOD-323
2=A
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
VR
40
V
Forward current
IF
750
mA
Average forward current (50/60Hz, sinus)
IFAV
500
Surge forward current (t< 100µs)
IFSM
2.5
A
Total power dissipation, T S = 66 °C
Ptot
600
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
- 65 ...+150
Maximum Ratings
Junction - ambient
1)
Junction - soldering point
RthJA
≤ 275
RthJS
≤ 140
K/W
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
Semiconductor Group
Semiconductor Group
11
Sep-04-1998
1998-11-01
BAT 165
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol
Parameter
Values
Unit
min.
typ.
max.
IR
-
-
50
µA
IR
-
-
900
nA
DC characteristics
Reverse current
VR = 30 V
Reverse current
VR = 30 V, TA = 65 °C
Forward voltage
V
VF
I F = 10 mA
-
0.305
0.4
I F = 100 mA
-
0.38
-
I F = 250 mA
-
0.44
0.7
I F = 750 mA
-
0.58
-
-
8.4
12
AC characteristics
Diode capacitance
CT
pF
VR = 10 V, f = 1 MHz
Semiconductor Group
Semiconductor Group
22
Sep-04-1998
1998-11-01
BAT 165
Forward current IF = f (TA*;TS)
* Package mounted on epoxy
800
TS
mA
TA
IF
600
500
400
300
200
100
0
0
20
40
60
80
120 °C
100
150
TA,TS
Permissible Pulse Load
Permissible Pulse Load R thJS = f(t p)
IFmax / IFDC = f(tp)
10 3
10 2
IFmax / IFDC
K/W
RthJS
10 2
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1 -6
10
-
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -6
10
0
tp
Semiconductor Group
Semiconductor Group
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
33
Sep-04-1998
1998-11-01