INFINEON BUZ101S

BUZ 101 S
Preliminary data
SPP22N05
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
Pin 1
Pin 2
G
Pin 3
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 101 S
55 V
22 A
0.06 Ω
TO-220 AB
Q67040-S4013-A2
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
Values
Unit
A
TC = 25 °C
22
TC = 100 °C
16
IDpuls
Pulsed drain current
TC = 25 °C
88
EAS
Avalanche energy, single pulse
mJ
ID = 22 A, VDD = 25 V, RGS = 25 Ω
L = 372 µH, Tj = 25 °C
90
Avalanche current,limited by Tjmax
IAR
22
A
Avalanche energy,periodic limited by Tjmax
EAR
5.5
mJ
Reverse diode dv/dt
dv/dt
kV/µs
IS = 22 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
6
Gate source voltage
VGS
Power dissipation
Ptot
TC = 25 °C
Semiconductor Group
± 20
V
W
55
1
04/Nov/1997
BUZ 101 S
Preliminary data
SPP22N05
Maximum Ratings
Parameter
Symbol
Values
Unit
Operating temperature
Tj
-55 ... + 175
°C
Storage temperature
Tstg
-55 ... + 175
Thermal resistance, junction - case
RthJC
≤ 2.7
Thermal resistance, junction - ambient
RthJA
≤ 62
IEC climatic category, DIN IEC 68-1
K/W
55 / 175 / 56
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
V(BR)DSS
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
55
-
-
2.1
3
4
VGS(th)
VGS=VDS, ID = 40 µA
Zero gate voltage drain current
V
IDSS
µA
VDS = 50 V, VGS = 0 V, Tj = -40 °C
-
-
0.1
VDS = 50 V, VGS = 0 V, Tj = 25 °C
-
0.1
1
VDS = 50 V, VGS = 0 V, Tj = 150 °C
-
-
100
Gate-source leakage current
IGSS
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
-
10
100
Ω
RDS(on)
VGS = 10 V, ID = 16 A
Semiconductor Group
nA
-
2
0.04
0.06
04/Nov/1997
BUZ 101 S
Preliminary data
SPP22N05
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Dynamic Characteristics
Transconductance
gfs
VDS≥ 2 * ID * RDS(on)max, ID = 16 A
Input capacitance
7
pF
-
490
615
-
170
215
-
95
120
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
-
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
-
Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
S
td(on)
ns
VDD = 30 V, VGS = 10 V, ID = 22 A
RG = 19.6 Ω
Rise time
-
10
15
-
25
38
-
20
30
-
20
30
tr
VDD = 30 V, VGS = 10 V, ID = 22 A
RG = 19.6 Ω
Turn-off delay time
td(off)
VDD = 30 V, VGS = 10 V, ID = 22 A
RG = 19.6 Ω
Fall time
tf
VDD = 30 V, VGS = 10 V, ID = 22 A
RG = 19.6 Ω
Gate charge at threshold
Qg(th)
VDD = 40 V, ID = 0.1 A, VGS =0 to 1 V
Gate charge at 7.0 V
0.75
-
13
20
-
17
26
V(plateau)
VDD = 40 V, ID = 22 A
Semiconductor Group
0.5
Qg(total)
VDD = 40 V, ID = 22 A, VGS =0 to 10 V
Gate plateau voltage
-
Qg(7)
VDD = 40 V, ID = 22 A, VGS =0 to 7 V
Gate charge total
nC
V
-
3
5.9
04/Nov/1997
BUZ 101 S
Preliminary data
SPP22N05
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current IS
TC = 25 °C
Inverse diode direct current,pulsed
-
-
88
V
1.2
1.8
trr
ns
-
55
85
Qrr
VR = 30 V, IF=lS, diF/dt = 100 A/µs
Semiconductor Group
22
-
VR = 30 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
-
VSD
VGS = 0 V, IF = 44 A
Reverse recovery time
-
ISM
TC = 25 °C
Inverse diode forward voltage
A
µC
-
4
0.12
0.18
04/Nov/1997
BUZ 101 S
Preliminary data
SPP22N05
Power dissipation
Ptot = ƒ(TC)
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 10 V
60
24
W
A
50
Ptot
20
ID
45
18
40
16
35
14
30
12
25
10
20
8
15
6
10
4
5
2
0
0
20
40
60
80
100 120 140
°C
180
TC
Semiconductor Group
0
0
20
40
60
80
100 120 140
°C
180
TC
5
04/Nov/1997
BUZ 101 S
Preliminary data
SPP22N05
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
50
Ptot = 55W
0.19
l
k
A
ID
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
Ω
j
VGS [V]
a
4.0
40
b
4.5
c
5.0
h d
5.5
e
6.0
f
6.5
g
7.0
h
7.5
i
35
30
g
25
f i
20
e
15
9.0
k
10.0
l
20.0
e
f
g
0.10
0.08
0.06
h
i
0.04
0.02
b
0
a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
d
0.12
c
5
c
0.14
d
10
b
0.16
RDS (on)
8.0
j
a
V
5.0
VDS
0.00
0
j
VGS [V] =
a
5.0
4.0
4.5
5
b
5.5
c
6.0
10
d
6.5
15
e
f
7.0 7.5
20
g
8.0
25
h
i
j
9.0 10.0 20.0
30
35
A
45
ID
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
60
A
50
ID
45
40
35
30
25
20
15
10
5
0
0
1
2
3
Semiconductor Group
4
5
6
7
8
V
VGS
10
6
04/Nov/1997
BUZ 101 S
Preliminary data
SPP22N05
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 16 A, VGS = 10 V
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 40 µA
0.20
4.6
Ω
V
98%
4.0
RDS (on)0.16
VGS(th)
0.14
3.6
3.2
0.12
2.8
0.10
2.4
98%
typ
2%
2.0
0.08
1.6
typ
0.06
1.2
0.04
0.8
0.02
0.00
-60
0.4
-20
20
60
100
°C
0.0
-60
180
-20
20
60
100
°C
Tj
180
Tj
Typ. capacitances
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 4
10 2
pF
A
IF
C
10 3
10 1
Ciss
Coss
10 2
10 0
Crss
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 1
0
5
10
Semiconductor Group
15
20
25
30
V
40
VDS
7
10 -1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
04/Nov/1997
BUZ 101 S
Preliminary data
SPP22N05
Avalanche energy EAS = f (Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 22 A
parameter:ID=22A,VDD =25 V
RGS =25 Ω , L = 372µH
100
16
mJ
EAS
V
80
VGS
12
70
10
60
0,2 VDS max
50
0,8 VDS max
8
40
6
30
4
20
2
10
0
20
40
60
80
100
120
140
°C
Tj
180
0
0
4
8
12
16
nC
24
QGate
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
65
V
V(BR)DSS
61
59
57
55
53
51
49
-60
-20
20
60
100
°C
180
Tj
Semiconductor Group
8
04/Nov/1997