MOTOROLA MRF18085BR3

MOTOROLA
Freescale Semiconductor, Inc.
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by MRF18085B/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
Freescale Semiconductor, Inc...
N - Channel Enhancement - Mode Lateral MOSFETs
MRF18085BR3
MRF18085BLSR3
Designed for GSM and GSM EDGE base station applications with
frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier
amplifier applications.
• GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990
MHz)
Power Gain - 12.5 dB (Typ) @ 85 Watts CW
Efficiency - 50% (Typ) @ 85 Watts CW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency, and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,
@ f = 1930 MHz
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
GSM/GSM EDGE
1.9 - 1.99 GHz, 85 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF18085BR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF18085BLSR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
273
1.56
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
RθJC
0.79
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Class
1 (Minimum)
Machine Model
M3 (Minimum)
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2004
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MRF18085BR3 MRF18085BLSR3
1
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 600 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.18
0.21
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
6.0
—
S
Crss
—
3.6
—
pF
Common - Source Amplifier Power Gain @ 85 W
(VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz)
Gps
11.5
12.5
—
dB
Drain Efficiency @ 85 W
(VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz)
η
46
50
—
%
Input Return Loss @ 85 W
(VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz)
IRL
—
- 12
-9
dB
P1 dB Output Power
(VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz)
P1dB
80
90
—
Watts
Output Mismatch Stress @ P1dB
(VDD = 26 Vdc, IDQ = 600 mA, f = 1930 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
OFF CHARACTERISTICS
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ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
MRF18085BR3 MRF18085BLSR3
2
MOTOROLA RF DEVICE DATA
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VSUPPLY
C3
VBIAS
C2
R2
C11
C1
C8
R3
Z1
Z2
C1, C10
C2
C3, C6
C4
C5
C7, C8
C9
C11
R1, R2
R3
Z4
Z5
Z6
Z3
Z7
RF
OUTPUT
C6
C5
C9
C4
Freescale Semiconductor, Inc...
C7
R1
+
RF
INPUT
C10
+
DUT
1.0 nF Chip Capacitors, B Case, ATC
10 mF, 35 V Tantalum Capacitor
10 pF Chip Capacitors, B Case, ATC
3.3 pF Chip Capacitor, B Case, ATC
4.7 pF Chip Capacitor, B Case, ATC
100 nF Chip Capacitors, ACCU - P (1206)
3.9 pF Chip Capacitor, B Case, ATC
470 mF, 63 V Electrolytic Capacitor
1.0 kW Chip Resistors (0805)
2 x 18 kW Chip Resistor (1206)
Z1
Z2
Z3
Z4
Z5
Z6
Z7
PCB
1.654″
0.207″
0.362″
0.583″
0.449″
0.877″
0.326″
0.030″
x 0.082″ Microstrip
x 0.082″ Microstrip
x 1.260″ Microstrip
x 0.669″ Microstrip
x 0.179″ Microstrip
x 0.082″ Microstrip
x 0.082″ Microstrip
Glass Teflon (er = 2.55)
Figure 1. 1.93 - 1.99 GHz Test Fixture Schematic
C2
C11
VBIAS
C3
R1
VSUPPLY
C7
C10
R2
C1
R3
C8
C6
A1
C4
C9
A2
C5
MRF18085B
Rev 0
Ground
Ground
Figure 2. 1.93 - 1.99 GHz Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
VBIAS
+
ÎÎÎ
ÎÎÎ
ÎÎÎ
C13
C1
C12
T1
R1
VSUPPLY
R5
+
R2
B1
C10
C2
C11
R3
C3
T2
C4
R4
C14
R7
C5
Freescale Semiconductor, Inc...
R6
RF
INPUT
Z1
Z2
Z6
Z3
Z7
Z8
Z9
RF
OUTPUT
Z5
Z4
C7
C8
C9
B1
C1, C2
C3, C4
C5
C7
C8
C9
C10
C11, C12
C13
C14
Short RF Ferrite Bead, #27 430119447
1 mF Chip Capacitors, ACCU - P (0805)
1 nF Chip Capacitors, ACCU - P (0805)
10 pF Chip Capacitor, ACCU - P (0805)
1.5 pF Chip Capacitor, ACCU - P (0805)
8.2 pF Chip Capacitor, ACCU - P (0805)
1.0 pF Chip Capacitor, ACCU - P (0805)
100 mF, 63 V Electrolytic Capacitor
10 nF Chip Capacitors (0805)
10 mF, 35 V Tantalum Capacitor
8.2 pF Chip Capacitor, ACCU - P (0805)
R1
R2
R3
R4
R5
R6, R7
T1
T2
Z1 - Z9
Substrate
10 Ω Chip Resistor (0805)
1 kΩ Chip Resistor (0805)
1.2 kΩ Chip Resistor (0805)
2.2 kΩ Chip Resistor (0805)
5 kΩ Chip Resistor (0805)
9 Ω Chip Resistors (1206) (18 Ω x 18 Ω)
Voltage Regulator, Micro - 8, Motorola #LP2951
NPN Bipolar Transistor, SOT - 23, Motorola #BC847
Printed Transmission Lines
0.5 mm Rogers 4350 (er = 3.53)
Figure 3. 1.93 - 1.99 GHz GSM EDGE Optimized Demo Board Schematic
VBIAS
VSUPPLY
Ground
R1
C1
R2
D
T1
R3
R4
C2
T2
+
C10
C13
C3
C12
B1
C14
C5
R5
R6
C4
C11
C7
C8
C9
MRF18085
Figure 4. 1.93 - 1.99 GHz GSM EDGE Optimized Demo Board Component Layout
MRF18085BR3 MRF18085BLSR3
4
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
(Performed on a GSM EDGE Optimized Demo Board)
EVM, ERROR VECTOR MAGNITUDE (%)
14
IDQ = 1000 mA
800 mA
600 mA
400 mA
11
VDD = 26 Vdc
f = 1.96 GHz
10
10
Pout, OUTPUT POWER (WATTS)
100
Pout = 38 W Avg.
3
2.5
28 W Avg.
2
1.5
19 W Avg.
1
0.5
0
1.91
Figure 5. Power Gain versus Output Power
1.93
1.94 1.95 1.96 1.97
f, FREQUENCY (GHz)
1.98
1.99
2.0
6
EVM, ERROR VECTOR MAGNITUDE (%)
14
G ps, POWER GAIN (dB)
1.92
Figure 6. Error Vector Magnitude versus
Frequency
13.5
13
12.5
32 V
12
11.5
28 V
11
24 V
10.5
10
VDD = 20 V
9.5
9
14
5
13
Gps
4
12
3
11
2
10
EVM
1
9
8
0
0
20
40
60
80
Pout, OUTPUT POWER (WATTS)
100
34
Figure 7. Power Gain versus Output Power
13.5
30 W
−10
15
50
14
40
−20
−25
VDD = 26 Vdc
IDQ = 800 mA
11.5
80 W
11
1.85
1.90
1.95
f, FREQUENCY (GHz)
2.00
Figure 9. Power Gain and IRL
versus Frequency
MOTOROLA RF DEVICE DATA
50
60
12.5
12
48
16
−15
30 W
40
38
42
44
46
Pout, OUTPUT POWER (dBm) AVG.
−5
13
80 W
36
Figure 8. EVM and Gain versus Output Power
G ps, POWER GAIN (dB)
14
G ps, POWER GAIN (dB)
Freescale Semiconductor, Inc...
1
4
3.5
G ps , POWER GAIN (dB)
12
VDD = 26 Vdc
IDQ = 800 mA
Gps
13
30
12
20
−30
11
−35
2.05
10
h
1
VDD = 26 Vdc
IDQ = 800 mA
f = 1.96 GHz
10
Pout, OUTPUT POWER (WATTS)
η , DRAIN EFFICIENCY (%)
G ps, POWER GAIN (dB)
13
5
4.5
10
0
100
Figure 10. Power Gain and Efficiency
versus Output Power
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TYPICAL CHARACTERISTICS
(Performed on a GSM EDGE Optimized Demo Board)
Ref Lv1
−10 dBm
RBW 30 kHz
VBW 30 kHz
SWT 70 ms
RF Att
0 dB
Unit
0 dBm
−10
−20
−30
−40
−50
−60
−70
−80
Freescale Semiconductor, Inc...
−90
−100
−110
Center 1.96 GHz
200 kHz
Span 2 MHz
Figure 11. EDGE Spectrum at 40 Watts (Avg.) Output Power
MRF18085BR3 MRF18085BLSR3
6
MOTOROLA RF DEVICE DATA
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Zo = 5 Ω
Freescale Semiconductor, Inc...
f = 1990 MHz
Zload
f = 1805 MHz
f = 1805 MHz
f = 1990 MHz
Zsource
VDD = 26 V, IDQ = 800 mA, Pout = 85 W CW
f
MHz
Zsource
Ω
Zload
Ω
1805
1.43 - j3.74
2 - j3.60
1880
1.27 - j3.95
1.98 - j3.57
1930
1.5 - j4.13
2.13 - j3.16
1990
1.86 - j4.76
2.17 - j3.36
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
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MRF18085BR3 MRF18085BLSR3
7
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NOTES
MRF18085BR3 MRF18085BLSR3
8
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc...
NOTES
MOTOROLA RF DEVICE DATA
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MRF18085BR3 MRF18085BLSR3
9
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
NOTES
MRF18085BR3 MRF18085BLSR3
10
MOTOROLA RF DEVICE DATA
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PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
M
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
T A
M
B
M
M
M
bbb
N
Freescale Semiconductor, Inc...
R
(INSULATOR)
M
T A
M
B
M
ccc
T A
M
S
(LID)
ccc
H
M
T A
M
B
M
aaa
T A
M
(LID)
B
M
M
(INSULATOR)
B
M
M
C
F
E
A
T
A
SEATING
PLANE
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465 - 06
ISSUE F
NI - 780
MRF18085BR3
(FLANGE)
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
4X U
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4X Z
(LID)
B
1
2X
2
B
(FLANGE)
K
D
bbb
M
T A
B
M
N
M
ccc
M
R
(LID)
M
T A
M
B
M
ccc
M
T A
S
(INSULATOR)
bbb
M
T A
M
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
(FLANGE)
MOTOROLA RF DEVICE DATA
F
T
SEATING
PLANE
CASE 465A - 06
ISSUE F
NI - 780S
MRF18085BLSR3
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DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−− 0.040
−−− 0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF18085BR3 MRF18085BLSR3
11
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Freescale Semiconductor, Inc.
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including
“Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the
rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
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owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola Inc. 2004
HOW TO REACH US:
JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center,
3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan
81-3-3440-3569
USA /EUROPE /LOCATIONS NOT LISTED:
Motorola Literature Distribution
P.O. Box 5405, Denver, Colorado 80217
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2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong
852-26668334
HOME PAGE: http://motorola.com/semiconductors
MRF18085BR3 MRF18085BLSR3
12
◊
MRF18085B/D
MOTOROLA RF DEVICE
DATA
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