MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18085B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc... N - Channel Enhancement - Mode Lateral MOSFETs MRF18085BR3 MRF18085BLSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain - 12.5 dB (Typ) @ 85 Watts CW Efficiency - 50% (Typ) @ 85 Watts CW • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency, and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power, @ f = 1930 MHz • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. GSM/GSM EDGE 1.9 - 1.99 GHz, 85 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF18085BR3 CASE 465A - 06, STYLE 1 NI - 780S MRF18085BLSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain - Source Voltage VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 273 1.56 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit RθJC 0.79 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 1 (Minimum) Machine Model M3 (Minimum) (1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 For More Information On This Product, Go to: www.freescale.com MRF18085BR3 MRF18085BLSR3 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 600 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.18 0.21 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 6.0 — S Crss — 3.6 — pF Common - Source Amplifier Power Gain @ 85 W (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) Gps 11.5 12.5 — dB Drain Efficiency @ 85 W (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) η 46 50 — % Input Return Loss @ 85 W (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) IRL — - 12 -9 dB P1 dB Output Power (VDD = 26 Vdc, IDQ = 800 mA, f = 1930 - 1990 MHz) P1dB 80 90 — Watts Output Mismatch Stress @ P1dB (VDD = 26 Vdc, IDQ = 600 mA, f = 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Ψ OFF CHARACTERISTICS Freescale Semiconductor, Inc... ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF18085BR3 MRF18085BLSR3 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. VSUPPLY C3 VBIAS C2 R2 C11 C1 C8 R3 Z1 Z2 C1, C10 C2 C3, C6 C4 C5 C7, C8 C9 C11 R1, R2 R3 Z4 Z5 Z6 Z3 Z7 RF OUTPUT C6 C5 C9 C4 Freescale Semiconductor, Inc... C7 R1 + RF INPUT C10 + DUT 1.0 nF Chip Capacitors, B Case, ATC 10 mF, 35 V Tantalum Capacitor 10 pF Chip Capacitors, B Case, ATC 3.3 pF Chip Capacitor, B Case, ATC 4.7 pF Chip Capacitor, B Case, ATC 100 nF Chip Capacitors, ACCU - P (1206) 3.9 pF Chip Capacitor, B Case, ATC 470 mF, 63 V Electrolytic Capacitor 1.0 kW Chip Resistors (0805) 2 x 18 kW Chip Resistor (1206) Z1 Z2 Z3 Z4 Z5 Z6 Z7 PCB 1.654″ 0.207″ 0.362″ 0.583″ 0.449″ 0.877″ 0.326″ 0.030″ x 0.082″ Microstrip x 0.082″ Microstrip x 1.260″ Microstrip x 0.669″ Microstrip x 0.179″ Microstrip x 0.082″ Microstrip x 0.082″ Microstrip Glass Teflon (er = 2.55) Figure 1. 1.93 - 1.99 GHz Test Fixture Schematic C2 C11 VBIAS C3 R1 VSUPPLY C7 C10 R2 C1 R3 C8 C6 A1 C4 C9 A2 C5 MRF18085B Rev 0 Ground Ground Figure 2. 1.93 - 1.99 GHz Test Fixture Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF18085BR3 MRF18085BLSR3 3 Freescale Semiconductor, Inc. VBIAS + ÎÎÎ ÎÎÎ ÎÎÎ C13 C1 C12 T1 R1 VSUPPLY R5 + R2 B1 C10 C2 C11 R3 C3 T2 C4 R4 C14 R7 C5 Freescale Semiconductor, Inc... R6 RF INPUT Z1 Z2 Z6 Z3 Z7 Z8 Z9 RF OUTPUT Z5 Z4 C7 C8 C9 B1 C1, C2 C3, C4 C5 C7 C8 C9 C10 C11, C12 C13 C14 Short RF Ferrite Bead, #27 430119447 1 mF Chip Capacitors, ACCU - P (0805) 1 nF Chip Capacitors, ACCU - P (0805) 10 pF Chip Capacitor, ACCU - P (0805) 1.5 pF Chip Capacitor, ACCU - P (0805) 8.2 pF Chip Capacitor, ACCU - P (0805) 1.0 pF Chip Capacitor, ACCU - P (0805) 100 mF, 63 V Electrolytic Capacitor 10 nF Chip Capacitors (0805) 10 mF, 35 V Tantalum Capacitor 8.2 pF Chip Capacitor, ACCU - P (0805) R1 R2 R3 R4 R5 R6, R7 T1 T2 Z1 - Z9 Substrate 10 Ω Chip Resistor (0805) 1 kΩ Chip Resistor (0805) 1.2 kΩ Chip Resistor (0805) 2.2 kΩ Chip Resistor (0805) 5 kΩ Chip Resistor (0805) 9 Ω Chip Resistors (1206) (18 Ω x 18 Ω) Voltage Regulator, Micro - 8, Motorola #LP2951 NPN Bipolar Transistor, SOT - 23, Motorola #BC847 Printed Transmission Lines 0.5 mm Rogers 4350 (er = 3.53) Figure 3. 1.93 - 1.99 GHz GSM EDGE Optimized Demo Board Schematic VBIAS VSUPPLY Ground R1 C1 R2 D T1 R3 R4 C2 T2 + C10 C13 C3 C12 B1 C14 C5 R5 R6 C4 C11 C7 C8 C9 MRF18085 Figure 4. 1.93 - 1.99 GHz GSM EDGE Optimized Demo Board Component Layout MRF18085BR3 MRF18085BLSR3 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS (Performed on a GSM EDGE Optimized Demo Board) EVM, ERROR VECTOR MAGNITUDE (%) 14 IDQ = 1000 mA 800 mA 600 mA 400 mA 11 VDD = 26 Vdc f = 1.96 GHz 10 10 Pout, OUTPUT POWER (WATTS) 100 Pout = 38 W Avg. 3 2.5 28 W Avg. 2 1.5 19 W Avg. 1 0.5 0 1.91 Figure 5. Power Gain versus Output Power 1.93 1.94 1.95 1.96 1.97 f, FREQUENCY (GHz) 1.98 1.99 2.0 6 EVM, ERROR VECTOR MAGNITUDE (%) 14 G ps, POWER GAIN (dB) 1.92 Figure 6. Error Vector Magnitude versus Frequency 13.5 13 12.5 32 V 12 11.5 28 V 11 24 V 10.5 10 VDD = 20 V 9.5 9 14 5 13 Gps 4 12 3 11 2 10 EVM 1 9 8 0 0 20 40 60 80 Pout, OUTPUT POWER (WATTS) 100 34 Figure 7. Power Gain versus Output Power 13.5 30 W −10 15 50 14 40 −20 −25 VDD = 26 Vdc IDQ = 800 mA 11.5 80 W 11 1.85 1.90 1.95 f, FREQUENCY (GHz) 2.00 Figure 9. Power Gain and IRL versus Frequency MOTOROLA RF DEVICE DATA 50 60 12.5 12 48 16 −15 30 W 40 38 42 44 46 Pout, OUTPUT POWER (dBm) AVG. −5 13 80 W 36 Figure 8. EVM and Gain versus Output Power G ps, POWER GAIN (dB) 14 G ps, POWER GAIN (dB) Freescale Semiconductor, Inc... 1 4 3.5 G ps , POWER GAIN (dB) 12 VDD = 26 Vdc IDQ = 800 mA Gps 13 30 12 20 −30 11 −35 2.05 10 h 1 VDD = 26 Vdc IDQ = 800 mA f = 1.96 GHz 10 Pout, OUTPUT POWER (WATTS) η , DRAIN EFFICIENCY (%) G ps, POWER GAIN (dB) 13 5 4.5 10 0 100 Figure 10. Power Gain and Efficiency versus Output Power For More Information On This Product, Go to: www.freescale.com MRF18085BR3 MRF18085BLSR3 5 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS (Performed on a GSM EDGE Optimized Demo Board) Ref Lv1 −10 dBm RBW 30 kHz VBW 30 kHz SWT 70 ms RF Att 0 dB Unit 0 dBm −10 −20 −30 −40 −50 −60 −70 −80 Freescale Semiconductor, Inc... −90 −100 −110 Center 1.96 GHz 200 kHz Span 2 MHz Figure 11. EDGE Spectrum at 40 Watts (Avg.) Output Power MRF18085BR3 MRF18085BLSR3 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Zo = 5 Ω Freescale Semiconductor, Inc... f = 1990 MHz Zload f = 1805 MHz f = 1805 MHz f = 1990 MHz Zsource VDD = 26 V, IDQ = 800 mA, Pout = 85 W CW f MHz Zsource Ω Zload Ω 1805 1.43 - j3.74 2 - j3.60 1880 1.27 - j3.95 1.98 - j3.57 1930 1.5 - j4.13 2.13 - j3.16 1990 1.86 - j4.76 2.17 - j3.36 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF18085BR3 MRF18085BLSR3 7 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF18085BR3 MRF18085BLSR3 8 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF18085BR3 MRF18085BLSR3 9 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF18085BR3 MRF18085BLSR3 10 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb T A M B M M M bbb N Freescale Semiconductor, Inc... R (INSULATOR) M T A M B M ccc T A M S (LID) ccc H M T A M B M aaa T A M (LID) B M M (INSULATOR) B M M C F E A T A SEATING PLANE INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE F NI - 780 MRF18085BR3 (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc 4X U (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B 1 2X 2 B (FLANGE) K D bbb M T A B M N M ccc M R (LID) M T A M B M ccc M T A S (INSULATOR) bbb M T A M M B M aaa M T A M (LID) B M (INSULATOR) B M H C 3 E A A (FLANGE) MOTOROLA RF DEVICE DATA F T SEATING PLANE CASE 465A - 06 ISSUE F NI - 780S MRF18085BLSR3 For More Information On This Product, Go to: www.freescale.com DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF18085BR3 MRF18085BLSR3 11 Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. 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E Motorola Inc. 2004 HOW TO REACH US: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF18085BR3 MRF18085BLSR3 12 ◊ MRF18085B/D MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com