MOTOROLA MRF18030A

MOTOROLA
Freescale Semiconductor, Inc.
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by MRF18030A/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
Freescale Semiconductor, Inc...
RF Power Field Effect Transistors MRF18030ALR3
N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3
Designed for GSM and EDGE base station applications with frequencies
from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. Specified for GSM 1805 - 1880 MHz.
• Typical GSM Performance:
Power Gain - 14 dB (Typ) @ 30 Watts
Efficiency - 50% (Typ) @ 30 Watts
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W Output Power
• Excellent Thermal Stability
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
1.8 - 1.88 GHz, 30 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF18030ALR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF18030ALSR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
83.3
0.48
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
2.1
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Class
2 (Minimum)
Machine Model
M3 (Minimum)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 6
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2004
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MRF18030ALR3 MRF18030ALSR3
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C, 50 ohm system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 µAdc)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 250 mAdc)
VGS(Q)
2
3.9
4.5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.29
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
gfs
—
2
—
S
Crss
—
1.3
—
pF
Output Power, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz)
P1dB
27
30
—
Watts
Common - Source Amplifier Power Gain @ 30 W
(VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz)
Gps
13
14
—
dB
Drain Efficiency @ 30 W
(VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz)
η
46.5
50
—
%
Input Return Loss @ 30 W
(VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz)
IRL
—
- 12
-9
dB
Output Mismatch Stress @ 30 W
(VDD = 26 Vdc, IDQ = 250 mA, f1 = 1805 - 1880 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
OFF CHARACTERISTICS
Freescale Semiconductor, Inc...
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
FUNCTIONAL TESTS (In Motorola Test Fixture) (2)
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(2) Device specifications obtained on a Production Test Fixture.
MRF18030ALR3 MRF18030ALSR3
2
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
VDD
+
C8
VGG
C10
R2
Z9
C7
R3
R1
C4
Z4
RF
INPUT
Z1
Z2
Freescale Semiconductor, Inc...
Z6
C5
C2
C1
C1
C2
C3
C4, C5
C6, C7, C8
C9
C10
R1
R2, R3
Z3
Z5
Z7
Z8
RF
OUTPUT
C6
C3
DUT
C9
1.8 pF, 100B Chip Capacitor
0.8 pF, 100B Chip Capacitor
1.0 pF, 100B Chip Capacitor
1.2 pF, 100B Chip Capacitors
8.2 pF, 100B Chip Capacitors
0.3 pF, 100B Chip Capacitor
220 mF, 63 V Electrolytic Capacitor
1.0 kΩ, 1/8 W Chip Resistor (0805)
10 kΩ, 1/8 W Chip Resistors (0805)
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.874″ x 0.087″ Microstrip
1.094″ x 0.087″ Microstrip
0.257″ x 0.633″ Microstrip
0.189″ x 0.394″ Microstrip
0.335″ x 0.394″ Microstrip
0.484″ x 0.087″ Microstrip
0.877″ x 0.087″ Microstrip
0.366″ x 0.087″ Microstrip
≈0.600″ x 0.087″ Microstrip
Figure 1. 1805 - 1880 MHz Test Fixture Schematic
VBIAS
VSUPPLY
R2R3
C10
C8
C7
C1
R1
C4
C2
C6
C9
C3
C5
MRF18030A
Ground
(bias)
Ground
(supply)
Figure 2. 1805 - 1880 MHz Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
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MRF18030ALR3 MRF18030ALSR3
3
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
14
−10
Gps @ 30 W
13
−15
IRL @ 30 W
12
−20
IRL @ 15 W
VDD = 26 Vdc
IDQ = 250 mA
T = 25_C
11
10
1750
−25
1800
1850
30
VDD = 26 Vdc
IDQ = 250 mA
T = 25_C
20
0.5 W
15
10
0.25 W
5
0
1780
1800
1820
1840
1860
1880
1900
1920
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 3. Wideband Gain and IRL at 30 W and
15 W Output Power
Figure 4. Output Power versus Frequency
16
IDQ = 400 mA
15
15
G ps , POWER GAIN (dB)
300 mA
14
200 mA
13
12
100 mA
VDD = 26 Vdc
f = 1840 MHz
T = 25_C
11
10
0.1
1
100
12
11
VDD = 26 Vdc
IDQ = 250 mA
f = 1840 MHz
26
28
30
32
34
36
38
40
42
44
46
48
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (dBm)
Figure 5. Power Gain versus Output Power
Figure 6. Power Gain versus Output Power
14
15
30 V
13
28 V
12
26 V
24 V
11
VDD = 22 Vdc
IDQ = 250 mA
f = 1840 MHz
T = 25_C
0.1
85_C
13
24
16
9
55_C
9
10
15
10
T = 25_C
14
10
G ps , POWER GAIN (dB)
G ps , POWER GAIN (dB)
1W
25
−30
1950
1900
Pin = 2 W
35
16
G ps , POWER GAIN (dB)
Freescale Semiconductor, Inc...
−5
Gps @ 15 W
60
50
Gps
14
40
13
30
VDD = 26 Vdc
IDQ = 250 mA
f = 1840 MHz
12
20
η
11
10
10
1
10
100
0
0.1
1
10
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 7. Power Gain versus Output Power
Figure 8. Power Gain and Efficiency versus
Output Power
MRF18030ALR3 MRF18030ALSR3
4
η, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dB)
15
40
P out, OUTPUT POWER (WATTS)
0
IRL, INPUT RETURN LOSS (dB)
16
100
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
f = 2110 MHz
f = 2110 MHz
Zload
Zo = 25 Ω
f = 1710 MHz
Zsource
Freescale Semiconductor, Inc...
f = 1710 MHz
VDD = 26 V, IDQ = 250 mA, Pout = 30 W (CW)
f
MHz
Zsource
Ω
Zload
Ω
1710
2.92 - j8.24
4.18 - j9.06
1785
3.84 - j9.75
4.59 - j9.46
1805
4.15 - j10.38
4.98 - j9.06
1840
4.04 - j10.22
6.10 - j7.63
1880
6.12 - j12.29
5.83 - j6.89
1960
6.20 - j12.29
5.55 - j6.33
1990
8.61 - j12.10
5.93 - j6.66
2110
15.19 - j11.85
3.82 - j5.33
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MOTOROLA RF DEVICE DATA
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MRF18030ALR3 MRF18030ALSR3
5
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
NOTES
MRF18030ALR3 MRF18030ALSR3
6
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
2X
G
Q
bbb
T B
M
M
A
M
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060±.005 (1.52±0.13) RADIUS OR .06±.005
(1.52±0.13) x 45° CHAMFER.
B
SEE NOTE 4
1
3
2X K
B
2
2X D
bbb
M
T A
M
B
M
N (LID)
Freescale Semiconductor, Inc...
ccc
M
T A
B
M
ccc
M
aaa
M
T A
M
B
M
A
M
F
T
M
(INSULATOR)
B
M
R (LID)
C
E
T A
M
S
(INSULATOR)
SEATING
PLANE
aaa
M
T A
M
H
B
M
CASE 465E - 04
ISSUE E
NI - 400
MRF18030ALR3
M
B
2
2X K
M
T A
M
N
E
B
R
M
(LID)
ccc
(LID)
C
M
T A
M
B
M
M
B
M
F
3
A
T
A
(FLANGE)
M
aaa
M
T A
M
SEATING
PLANE
(INSULATOR)
B
M
MILLIMETERS
MIN
MAX
20.19
20.44
9.65
9.9
3.17
4.14
6.98
7.24
0.89
1.14
0.10
0.15
15.24 BSC
1.45
1.7
2.33
3.1
10
10.3
10
10.3
3.05
3.3
10
10.3
10
10.3
0.127 BSC
0.254 BSC
0.381 BSC
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
1
ccc
INCHES
MIN
MAX
.795
.805
.380
.390
.125
.163
.275
.285
.035
.045
.004
.006
.600 BSC
.057
.067
.092
.122
.395
.405
.395
.405
.120
.130
.395
.405
.395
.405
.005 BSC
.010 BSC
.015 BSC
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
2X D
bbb M T A
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
H
S
(INSULATOR)
aaa
B
(FLANGE)
M
T A
B
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.395
.405
.395
.405
.125
.163
.275
.285
.035
.045
.004
.006
.057
.067
.092
.122
.395
.405
.395
.405
.395
.405
.395
.405
.005 REF
.010 REF
.015 REF
MILLIMETERS
MIN
MAX
10.03
10.29
10.03
10.29
3.18
4.14
6.98
7.24
0.89
1.14
0.10
0.15
1.45
1.70
2.34
3.10
10.03
10.29
10.03
10.29
10.03
10.29
10.03
10.29
0.127 REF
0.254 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465F - 04
ISSUE C
NI - 400S
MRF18030ALSR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF18030ALR3 MRF18030ALSR3
7
Freescale Semiconductor, Inc...
Freescale Semiconductor, Inc.
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E Motorola Inc. 2004
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MRF18030A/D
MRF18030ALR3 MRF18030ALSR3 ◊
MOTOROLA RF DEVICE
DATA
For More Information On This Product,
8
Go to: www.freescale.com