Transistor 2SA1128 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm ■ Features Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converter circuits. ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –7 V Peak collector current ICP –1 A Collector current IC – 0.5 A Collector power dissipation PC 600 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 0.45 –0.1 1.27 1.27 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Symbol ICBO Collector cutoff current +0.2 0.45 –0.1 2.3±0.2 ● 13.5±0.5 ● 4.0±0.2 5.1±0.2 5.0±0.2 Conditions min typ VCB = –25V, IE = 0 max Unit –100 nA –1 µA ICEO VCE = –20V, IB = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –25 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –20 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V hFE1 Forward current transfer ratio *1 VCE = –2V, IC = –0.5A*2 90 220 hFE2 VCE = –2V, IC = –1A*2 Collector to emitter saturation voltage VCE(sat) IC = –500mA, IB = –50mA*2 – 0.4 V Base to emitter saturation voltage VBE(sat) IC = –500mA, IB = –50mA*2 –1.2 V Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 150 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 15 25 MHz 25 *2 *1h FE pF Pulse measurement Rank classification Rank Q R hFE1 90 ~ 155 130 ~ 220 Note) S Rank VCEO ≥ 18V. 1 2SA1128 Transistor PC — Ta IC — VCE IB=–10µA 700 –1.0 –9µA –8µA –7µA 600 – 0.8 500 –6µA –5µA – 0.6 400 300 –4µA –3µA – 0.4 200 –2µA –1µA – 0.2 –10 –3 –1 – 0.3 Ta=75˚C 25˚C –25˚C – 0.03 0 40 60 80 100 120 140 160 0 –1 –10 –3 25˚C 75˚C – 0.3 – 0.1 – 0.03 –1 –3 –10 Collector current IC (A) Cob — VCB IE=0 f=1MHz Ta=25˚C 60 50 40 30 20 10 –3 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –30 –100 Collector to base voltage VCB (V) –1 VCB=–10V Ta=25˚C 400 Ta=75˚C 25˚C 200 –10 320 500 300 –3 Collector current IC (A) fT — IE –25˚C 100 280 240 200 160 120 80 40 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Collector current IC (A) 80 0 –1 –6 VCE=–2V Forward current transfer ratio hFE –30 70 –5 600 IC/IB=10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –4 hFE — IC –100 –1 –3 Collector to emitter voltage VCE (V) VBE(sat) — IC Ta=–25˚C –2 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 –30 – 0.1 100 0 Collector output capacitance Cob (pF) Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 0 2 VCE(sat) — IC –100 –1.2 Collector current IC (A) Collector power dissipation PC (mW) 800 –10 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) 100