Transistor 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB621 and 2SB621A Unit: mm 5.0±0.2 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Collector to 2SD592 base voltage 2SD592A Collector to 2SD592 Ratings 30 VCBO Emitter to base voltage VEBO Peak collector current ICP V 60 1.27 5 V 1.5 A Collector current IC 1 A PC 750 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Symbol ICBO Collector to base 2SD592 voltage 2SD592A Collector to emitter 2SD592 voltage 2SD592A Emitter to base voltage 1.27 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Collector cutoff current +0.2 0.45 –0.1 V 50 Collector power dissipation ■ Electrical Characteristics +0.2 0.45 –0.1 25 VCEO emitter voltage 2SD592A Unit 2.3±0.2 ● 13.5±0.5 ● 5.1±0.2 ■ Features 4.0±0.2 Conditions typ VCB = 20V, IE = 0 VCBO IC = 10µA, IE = 0 VCEO IC = 2mA, IB = 0 VEBO IE = 10µA, IC = 0 hFE1 min *1 Unit 0.1 µA 30 V 60 25 V 50 5 340 IC = 500mA, IB = 50mA*2 0.2 0.4 V VBE(sat) IC = 500mA, IB = 50mA*2 0.85 1.2 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 200 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz hFE2 VCE = 5V, IC = 1A*2 Collector to emitter saturation voltage VCE(sat) Base to emitter saturation voltage 85 V 160 Forward current transfer ratio VCE = 10V, IC = 500mA*2 max 50 MHz 20 *2 *1h FE1 pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 2SD592, 2SD592A Transistor PC — Ta IC — VCE 1.0 IC — I B 1.50 1.2 0.6 0.4 0.2 IB=10mA 9mA 8mA 1.00 7mA 6mA 0.75 5mA 4mA 3mA 0.50 2mA 0.25 0 60 80 100 120 140 160 2 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 10 3 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 10 0.1 0.3 Collector output capacitance Cob (pF) 120 80 40 1 3 Emitter current IE (mA) –100 8 10 12 500 400 300 Ta=75˚C 200 25˚C –25˚C 100 0 0.01 0.03 10 0.1 0.3 1 30 100 Collector current IC (A) VCER — RBE 120 IE=0 f=1MHz Ta=25˚C 40 30 20 10 0 –30 6 VCE=10 Cob — VCB 160 4 600 50 –10 2 Base current IB (mA) Collector current IC (A) VCB=10V Ta=25˚C –3 0 hFE — IC 30 fT — IE 0 –1 8 IC/IB=10 Collector current IC (A) 200 6 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 3 0.1 4 VBE(sat) — IC IC/IB=10 0.3 0.4 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 0.6 0 0 Forward current transfer ratio hFE 40 0.8 0.2 1mA 1 3 10 30 100 Collector to base voltage VCB (V) Collector to emitter voltage VCER (V) 20 Ambient temperature Ta (˚C) Transition frequency fT (MHz) 1.0 0 0 2 VCE=10V Ta=25˚C Collector current IC (A) 1.25 0.8 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C IC=10mA Ta=25˚C 100 80 60 2SD592A 40 2SD592 20 0 0.1 0.3 1 3 10 30 100 Base to emitter resistance RBE (kΩ) 2SD592, 2SD592A Transistor ICEO — Ta 104 VCE=10V ICEO (Ta) ICEO (Ta=25˚C) 103 102 10 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 3