Transistor 2SC1509 Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA777 Unit: mm 5.9±0.2 4.9±0.2 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7±0.1 +0.3 ● 0.7–0.2 ● 8.6±0.2 ■ Features 13.5±0.5 2.54±0.15 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A Collector current IC 0.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 +0.2 0.45–0.1 0.45–0.1 1.27 1.27 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package 3.2 ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Conditions min typ Unit 0.1 µA ICBO Collector to base voltage VCBO IC = 10µA, IE = 0 80 V Collector to emitter voltage VCEO IC = 100µA, IB = 0 80 V Emitter to base voltage VEBO IE = 10µA, IC = 0 hFE1*1 VCE = 10V, IC = 150mA*2 130 hFE2 VCE = 5V, IC = 500mA*2 50 VCE(sat) IC = 300mA, IB = 30mA*2 0.2 0.4 Base to emitter saturation voltage VBE(sat) IC = 300mA, IB = 30mA*2 0.85 1.2 Transition frequency fT VCB = 10V, IE = –50mA, f = 100MHz 120 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 11 Forward current transfer ratio Collector to emitter saturation voltage VCB = 20V, IE = 0 max Collector cutoff current 5 V 330 100 FE1 V MHz 20 *2 *1h V pF Pulse measurement Rank classification Rank R S hFE1 130 ~ 220 185 ~ 330 1 2SC1509 Transistor PC — Ta IC — VCE 1.2 IC — I B 1.2 1.2 1.0 0.8 0.6 0.4 0.2 9mA 8mA 7mA 0.8 6mA 5mA 0.6 4mA 3mA 0.4 2mA 0.2 0 40 60 80 100 120 140 160 2 4 6 8 10 0 Collector to emitter voltage VCE (V) 3 1 0.3 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.001 30 100 30 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 300 1000 3 10 fT — IE 140 120 100 80 60 40 20 0 –1 30 100 300 1000 –10 25˚C –25˚C 150 100 50 –30 Emitter current IE (mA) –100 10 30 100 300 1000 ICBO — Ta 104 50 VCB=20V IE=0 f=1MHz Ta=25˚C 45 3 Collector current IC (mA) 40 103 35 30 25 20 102 15 10 10 5 0 –3 Ta=75˚C 200 1 ICBO (Ta) ICBO (Ta=25˚C) 160 10 250 Cob — VCB Collector output capacitance Cob (pF) 180 8 VCE=10V Collector current IC (mA) VCB=10V Ta=25˚C 6 0 1 Collector current IC (mA) 200 4 300 IC/IB=10 0.01 10 2 Base current IB (mA) hFE — IC 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 3 0.4 VBE(sat) — IC 10 1 0.6 0 0 VCE(sat) — IC 0.1 0.8 0.2 1mA Forward current transfer ratio hFE 20 Ambient temperature Ta (˚C) Transition frequency fT (MHz) 1.0 0 0 2 VCE=10V Ta=25˚C IB=10mA Collector current IC (A) 1.0 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C 1 1 3 10 30 100 Collector to base voltage VCB (V) 0 60 120 180 Ambient temperature Ta (˚C) 2SC1509 Transistor ICEO — Ta 105 Area of safe operation (ASO) 10 VCE=10V Single pulse Ta=25˚C 3 Collector current IC (A) ICEO (Ta) ICEO (Ta=25˚C) 104 103 102 1 ICP t=10ms IC 0.3 t=1s DC 0.1 0.03 0.01 10 0.003 1 0 20 40 60 80 100 120 140 Ambient temperature Ta (˚C) 0.001 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 3