Transistor 2SA1533 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC3939 Unit: mm 5.0±0.2 4.0±0.2 ● 0.7±0.2 ● 8.0±0.2 ■ Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –5 V Peak collector current ICP –1 A Collector current IC – 0.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.15 0.45 –0.1 1.27 1.27 +0.15 0.45 –0.1 2.3±0.2 ■ Absolute Maximum Ratings 13.5±0.5 0.7±0.1 1:Emitter 2:Collector 3:Base TO–92NL Package 1 2 3 2.54±0.15 (Ta=25˚C) Parameter Symbol Conditions min typ max Unit µA ICBO Collector to base voltage VCBO IC = –10µA, IE = 0 –80 V Collector to emitter voltage VCEO IC = –100µA, IB = 0 –80 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 hFE1* VCE = –10V, IC = –150mA 90 50 Forward current transfer ratio VCB = –20V, IE = 0 – 0.1 Collector cutoff current V 220 hFE2 VCE = –5V, IC = –500mA Collector to emitter saturation voltage VCE(sat) IC = –300mA, IB = –30mA – 0.2 – 0.4 Base to emitter saturation voltage VBE(sat) IC = –300mA, IB = –30mA – 0.85 –1.2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 85 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 11 *h FE1 100 V V MHz 20 pF Rank classification Rank Q R hFE1 90 ~ 155 130 ~ 220 1 Transistor 2SA1533 PC — Ta IC — VCE 1.2 IC — IB –1.2 –1.2 IB=–10mA –1.0 0.8 –8mA –7mA – 0.8 0.6 –6mA –5mA – 0.6 0.4 –4mA –3mA – 0.4 0.2 – 0.6 –1mA – 0.2 40 60 80 100 120 140 160 0 0 –2 –1 Ta=75˚C 25˚C –25˚C – 0.03 –10 –30 –10 –3 25˚C Ta=–25˚C –1 75˚C – 0.1 – 0.003 – 0.03 –3 –10 –30 –100 –300 –1000 – 0.01 –1 Collector current IC (mA) –3 –10 40 20 0 1 3 10 30 100 300 Emitter current IE (mA) 1000 –10 200 Ta=75˚C 25˚C 150 –25˚C 100 50 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) ICBO — Ta 104 IE=0 f=1MHz Ta=25˚C 50 –8 250 0 –1 –100 –300 –1000 VCB=–20V 103 ICBO (Ta) ICBO (Ta=25˚C) 60 Collector output capacitance Cob (pF) 80 60 –6 VCE=–10V Cob — VCB VCB=–10V f=200MHz Ta=25˚C 100 –30 –4 300 Collector current IC (mA) fT — IE 120 –2 Base current IB (mA) IC/IB=10 – 0.3 – 0.01 – 0.001 –1 0 hFE — IC –100 Base to emitter saturation voltage VBE(sat) (V) –3 – 0.1 –8 VBE(sat) — IC IC/IB=10 – 0.3 –6 Collector to emitter voltage VCE (V) VCE(sat) — IC –10 –4 Forward current transfer ratio hFE 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) – 0.8 0 0 Transition frequency fT (MHz) –1.0 – 0.4 –2mA – 0.2 0 2 –9mA VCE=–10V Ta=25˚C Collector current IC (A) 1.0 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C 40 30 20 102 10 10 0 –1 1 –3 –10 –30 –100 Collector to base voltage VCB (V) 0 60 120 180 Ambient temperature Ta (˚C) Transistor 2SA1533 ICEO — Ta 105 Area of safe operation (ASO) –10 VCE=–10V Single pulse Ta=25˚C –3 Collector current IC (A) ICEO (Ta) ICEO (Ta=25˚C) 104 –1 ICP IC t=10ms – 0.3 103 t=1s – 0.1 102 – 0.03 – 0.01 10 – 0.003 1 0 20 40 60 80 100 120 140 Ambient temperature Ta (˚C) – 0.001 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) 3