PANASONIC 2SB621A

Transistor
2SB621, 2SB621A
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD592 and 2SD592A
Unit: mm
5.0±0.2
Low collector to emitter saturation voltage VCE(sat).
High transition frequency fT.
■ Absolute Maximum Ratings
Parameter
(Ta=25˚C)
Symbol
Collector to
2SB621
base voltage
2SB621A
Collector to
2SB621
Ratings
–30
VCBO
–60
–25
VCEO
emitter voltage 2SB621A
Emitter to base voltage
VEBO
Peak collector current
ICP
–50
Unit
V
V
–5
V
–1.5
A
Collector current
IC
–1
A
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
Symbol
ICBO
Collector to base
2SB621
voltage
2SB621A
Collector to emitter
2SB621
voltage
2SB621A
Emitter to base voltage
1.27
1.27
1 2 3
2.54±0.15
Conditions
min
typ
VCB = –20V, IE = 0
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
IC = –10µA, IE = 0
VCEO
IC = –2mA, IB = 0
VEBO
IE = –10µA, IC = 0
–5
VCE = –10V, IC = –500mA
85
VCE = –5V, IC = –1A
50
*
hFE2
max
Unit
– 0.1
µA
–30
VCBO
hFE1
Forward current transfer ratio
+0.2
0.45 –0.1
(Ta=25˚C)
Parameter
Collector cutoff current
+0.2
0.45 –0.1
2.3±0.2
●
13.5±0.5
●
5.1±0.2
■ Features
4.0±0.2
V
–60
–25
V
–50
V
340
Collector to emitter saturation voltage
VCE(sat)
IC = –500mA, IB = –50mA
– 0.2
–0.4
V
Base to emitter saturation voltage
VBE(sat)
IC = –500mA, IB = –50mA
– 0.85
–1.2
V
Transition frequency
fT
VCB = –10V, IE = 50mA, f = 200MHz
200
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
20
*h
FE1
MHz
30
pF
Rank classification
Rank
Q
R
S
hFE1
85 ~ 170
120 ~ 240
170 ~ 340
1
Transistor
2SB621, 2SB621A
PC — Ta
IC — VCE
1.0
IC — IB
–1.5
–1.2
0.7
0.6
IB=–10mA
–9mA
–8mA
–1.0
–7mA
–6mA
– 0.75
0.5
0.4
–5mA
–4mA
–3mA
– 0.5
0.3
0.2
–2mA
– 0.25
–1mA
– 0.6
– 0.4
– 0.2
60
80 100 120 140 160
0
0
–8
–10
–10
–3
–1
Ta=75˚C
25˚C
–30
–10
–3
25˚C
Ta=–25˚C
–1
75˚C
– 0.1
– 0.03
– 0.03
–1
–3
–10
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
Collector current IC (A)
Collector output capacitance Cob (pF)
140
120
100
80
60
40
20
0
3
10
30
Emitter current IE (mA)
100
–8
–10
–12
VCE=–10V
–3
400
350
300
Ta=75˚C
250
200
25˚C
150
–25˚C
100
50
0
– 0.01 – 0.03 – 0.1 – 0.3
–10
–1
–3
–10
Collector current IC (A)
VCER — RBE
–120
IE=0
f=1MHz
Ta=25˚C
45
40
35
30
25
20
15
10
5
0
–1
–6
450
Cob — VCB
160
1
–1
50
VCB=–10V
Ta=25˚C
180
–4
500
Collector current IC (A)
fT — IE
200
–2
Base current IB (mA)
IC/IB=10
– 0.3
–25˚C
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
0
hFE — IC
–100
Base to emitter saturation voltage VBE(sat) (V)
–30
– 0.1
–6
VBE(sat) — IC
IC/IB=10
– 0.3
–4
Collector to emitter voltage VCE (V)
VCE(sat) — IC
–100
–2
Forward current transfer ratio hFE
40
–3
–10
–30
–100
Collector to base voltage VCB (V)
Collector to emitter voltage VCER (V)
20
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
– 0.8
0
0
Transition frequency fT (MHz)
–1.0
0.1
0
2
VCE=–10V
TC=25˚C
Collector current IC (A)
–1.25
0.8
Collector current IC (A)
Collector power dissipation PC (W)
Ta=25˚C
0.9
IC=–10mA
Ta=25˚C
–100
–80
–60
2SB621A
–40
2SB621
–20
0
0.1
0.3
1
3
10
30
100
Base to emitter resistance RBE (kΩ)
Transistor
2SB621, 2SB621A
ICEO — Ta
104
Area of safe operation (ASO)
–10
VCE=–10V
Single pulse
Ta=25˚C
–3
Collector current IC (A)
ICP
–1
IC
t=10ms
– 0.3
102
t=1s
– 0.1
– 0.03
10
– 0.003
1
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
– 0.001
– 0.01 – 0.03 – 0.1 – 0.3
–1
2SB621A
– 0.01
2SB621
ICEO (Ta)
ICEO (Ta=25˚C)
103
–3
–10
Collector to emitter voltage VCE (V)
3