Transistor 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD592 and 2SD592A Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). High transition frequency fT. ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Collector to 2SB621 base voltage 2SB621A Collector to 2SB621 Ratings –30 VCBO –60 –25 VCEO emitter voltage 2SB621A Emitter to base voltage VEBO Peak collector current ICP –50 Unit V V –5 V –1.5 A Collector current IC –1 A Collector power dissipation PC 750 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Symbol ICBO Collector to base 2SB621 voltage 2SB621A Collector to emitter 2SB621 voltage 2SB621A Emitter to base voltage 1.27 1.27 1 2 3 2.54±0.15 Conditions min typ VCB = –20V, IE = 0 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A IC = –10µA, IE = 0 VCEO IC = –2mA, IB = 0 VEBO IE = –10µA, IC = 0 –5 VCE = –10V, IC = –500mA 85 VCE = –5V, IC = –1A 50 * hFE2 max Unit – 0.1 µA –30 VCBO hFE1 Forward current transfer ratio +0.2 0.45 –0.1 (Ta=25˚C) Parameter Collector cutoff current +0.2 0.45 –0.1 2.3±0.2 ● 13.5±0.5 ● 5.1±0.2 ■ Features 4.0±0.2 V –60 –25 V –50 V 340 Collector to emitter saturation voltage VCE(sat) IC = –500mA, IB = –50mA – 0.2 –0.4 V Base to emitter saturation voltage VBE(sat) IC = –500mA, IB = –50mA – 0.85 –1.2 V Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 200 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 20 *h FE1 MHz 30 pF Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 Transistor 2SB621, 2SB621A PC — Ta IC — VCE 1.0 IC — IB –1.5 –1.2 0.7 0.6 IB=–10mA –9mA –8mA –1.0 –7mA –6mA – 0.75 0.5 0.4 –5mA –4mA –3mA – 0.5 0.3 0.2 –2mA – 0.25 –1mA – 0.6 – 0.4 – 0.2 60 80 100 120 140 160 0 0 –8 –10 –10 –3 –1 Ta=75˚C 25˚C –30 –10 –3 25˚C Ta=–25˚C –1 75˚C – 0.1 – 0.03 – 0.03 –1 –3 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Collector current IC (A) Collector output capacitance Cob (pF) 140 120 100 80 60 40 20 0 3 10 30 Emitter current IE (mA) 100 –8 –10 –12 VCE=–10V –3 400 350 300 Ta=75˚C 250 200 25˚C 150 –25˚C 100 50 0 – 0.01 – 0.03 – 0.1 – 0.3 –10 –1 –3 –10 Collector current IC (A) VCER — RBE –120 IE=0 f=1MHz Ta=25˚C 45 40 35 30 25 20 15 10 5 0 –1 –6 450 Cob — VCB 160 1 –1 50 VCB=–10V Ta=25˚C 180 –4 500 Collector current IC (A) fT — IE 200 –2 Base current IB (mA) IC/IB=10 – 0.3 –25˚C – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 0 hFE — IC –100 Base to emitter saturation voltage VBE(sat) (V) –30 – 0.1 –6 VBE(sat) — IC IC/IB=10 – 0.3 –4 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 –2 Forward current transfer ratio hFE 40 –3 –10 –30 –100 Collector to base voltage VCB (V) Collector to emitter voltage VCER (V) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) – 0.8 0 0 Transition frequency fT (MHz) –1.0 0.1 0 2 VCE=–10V TC=25˚C Collector current IC (A) –1.25 0.8 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C 0.9 IC=–10mA Ta=25˚C –100 –80 –60 2SB621A –40 2SB621 –20 0 0.1 0.3 1 3 10 30 100 Base to emitter resistance RBE (kΩ) Transistor 2SB621, 2SB621A ICEO — Ta 104 Area of safe operation (ASO) –10 VCE=–10V Single pulse Ta=25˚C –3 Collector current IC (A) ICP –1 IC t=10ms – 0.3 102 t=1s – 0.1 – 0.03 10 – 0.003 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) – 0.001 – 0.01 – 0.03 – 0.1 – 0.3 –1 2SB621A – 0.01 2SB621 ICEO (Ta) ICEO (Ta=25˚C) 103 –3 –10 Collector to emitter voltage VCE (V) 3