Transistor 2SC4410 Silicon NPN epitaxial planer type For UHF amplification Unit: mm 2.1±0.1 ■ Features +0.1 0.3–0 0.65 1.3±0.1 0.65 3 Unit Collector to base voltage VCBO 10 V Collector to emitter voltage VCEO 7 V Emitter to base voltage VEBO 2 V Collector current IC 10 mA Collector power dissipation PC 50 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.1 0.15–0.05 Ratings 0 to 0.1 Symbol Parameter 1 2 (Ta=25˚C) Parameter ■ Electrical Characteristics 0.425 0.2 ■ Absolute Maximum Ratings 1.25±0.1 0.7±0.1 ● 2.0±0.2 ● Allowing the small current and low voltage operation. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9±0.1 ● 0.425 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : 2X (Ta=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 1 µA Emitter cutoff current IEBO VEB = 1.5V, IC = 0 1 µA Forward current transfer ratio hFE VCE = 1V, IC = 1mA Transition frequency fT VCE = 1V, IC = 1mA, f = 800MHz Collector output capacitance Cob VCB = 1V, IE = 0, f = 1MHz 0.4 pF Foward transfer gain | S21e |2 VCE = 1V, IC = 1mA, f = 800MHz 6.0 dB Maximum unilateral power gain GUM VCE = 1V, IC = 1mA, f = 800MHz 15 dB Noise figure NF VCE = 1V, IC = 1mA, f = 800MHz 3.5 dB 50 200 4 GHz Note: Handle the product with care because this is sensitive to the electrostatic breakdown by its structure. 1 Transistor 2SC4410 PC — Ta IC — VCE 60 40 30 20 40µA 35µA 4 30µA 25µA 3 20µA 15µA 2 10µA 1 50 Collector current IC (mA) 50 0 40 60 80 100 120 140 160 0.4 10 3 1 Ta=75˚C 25˚C –25˚C 0.1 0.03 0.01 0.1 0.3 1 3 10 30 0.2 10 0.4 30 100 Collector to base voltage VCB (V) 0.8 1.2 Ta=75˚C 120 25˚C 80 –25˚C 40 1 3 10 24 30 VCE=1V f=800MHz Ta=25˚C 10 8 6 4 2 0 0.1 100 0.3 1 3 10 30 100 Collector current IC (mA) NF — IC 6 VCE=1V f=800MHz Ta=25˚C 20 16 12 8 4 0 0.1 2.0 fT — IC 160 0.3 1.6 Base to emitter voltage VBE (V) VCE=1V (Rg=50Ω) f=800MHz Ta=25˚C 5 Noise figure NF (dB) Maximum unilateral power gain GUM (dB) 0.4 3 0 GUM — IC 0.6 1 2.4 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 0.3 2.0 200 0 0.1 100 0.8 0 0.1 1.6 12 Cob — VCB 1.0 1.2 VCE=1V Collector current IC (mA) 1.2 0.8 240 Forward current transfer ratio hFE 30 0.3 20 hFE — IC IC/IB=10 –25˚C 30 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 25˚C Ta=75˚C 0 0 Transition frequency fT (GHz) 20 40 10 5µA 10 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 45µA 5 60 0 Collector output capacitance Cob (pF) VCE=1V Ta=25˚C IB=50µA 70 0 2 IC — VBE 6 Collector current IC (mA) Collector power dissipation PC (mW) 80 4 3 2 1 0.3 1 3 10 30 Collector current IC (mA) 100 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) 100