ETC Q67040S4186

SPU07N60S5
SPD07N60S5
Preliminary data
Cool MOS™==Power Transistor
COOLMOS
Power Semiconductors
•=New revolutionary high voltage technology
Product Summary
• Worldwide best RDS(on) in TO-251 and TO-252
• Ultra low gate charge
VDS @ Tjmax
650
V
•=Periodic avalanche rated
RDS(on)
0.6
Ω
• Extreme dv/dt rated
ID
7.3
A
P-TO252
•=Optimized capacitances
P-TO251-3-1
•=Improved noise immunity
•=Former development designation:
SPUx3N60S5/SPDx3N60S5
Type
Package
Ordering Code
Marking
SPU07N60S5
P-TO251-3-1
Q67040-S4196
07N60S5
SPD07N60S5
P-TO252
Q67040-S4186
07N60S5
D,2
G,1
S,3
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TC=25°C
7.3
TC=100°C
4.6
ID puls
14.6
EAS
230
EAR
0.5
Avalanche current (repetitive, limited by Tjmax )
IAR
7.3
Reverse diode dv/dt
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
83
W
-55... +150
°C
Pulsed drain current
1)
TC=25°C
Avalanche energy, single pulse
mJ
ID = 5.5 A, VDD = 50 V
Avalanche energy (repetitive, limited by Tjmax )
ID = 7.3 A , VDD = 50 V
A
kV/µs
IS =7.3A, VDS<VDSS , di/dt=100A/µs, Tjmax =150°C
TC=25°C
Operating and storage temperature
Tj , Tstg
1
2001-07-25
SPU07N60S5
SPD07N60S5
Preliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal Characteristics
Thermal resistance, junction - case
RthJC
-
-
1.5
Thermal resistance, junction - ambient
RthJA
-
-
75
@ min. footprint
-
-
75
@ 6 cm2 cooling area 2)
-
-
50
K/W
(Leaded and through-hole packages)
SMD version, device on PCB:
RthJA
Static Characteristics, at Tj = 25 °C, unless otherwise specified
Drain-source breakdown voltage
V(BR)DSS
600
-
-
V
VGS(th)
3.5
4.5
5.5
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS
ID = 350 µA, Tj = 25 °C
Zero gate voltage drain current, VDS=VDSS
µA
IDSS
VGS = 0 V, Tj = 25 °C
-
0.5
1
VGS = 0 V, Tj = 150 °C
-
-
100
IGSS
-
-
100
nA
RDS(on)
-
0.54
0.6
Ω
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-source on-state resistance
VGS = 10 V, ID = 4.6 A
1current limited by T
jmax
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
2
2001-07-25
SPU07N60S5
SPD07N60S5
Preliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
-
4
-
S
pF
Dynamic Characteristics
Transconductance
gfs
VDS ≥2*ID *RDS(on)max ,
ID =4.6A
Input capacitance
Ciss
VGS =0V, VDS =25V,
-
970
-
Output capacitance
Coss
f=1MHz
-
370
-
Reverse transfer capacitance
Crss
-
10
-
Turn-on delay time
td(on)
VDD =350V, VGS =10V,
-
120
-
Rise time
tr
ID =7.3A, RG=12Ω
-
40
-
Turn-off delay time
td(off)
-
170
255
Fall time
tf
-
20
30
-
7.5
-
-
16.5
-
-
27
35
-
-
7.3
-
-
14.6
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Total gate charge
Qg
VDD =350V, ID =7.3A
VDD =350V, ID =7.3A,
nC
VGS =0 to 10V
Reverse Diode
Inverse diode continuous
IS
TC=25°C
A
forward current
Inverse diode direct
ISM
current,pulsed
Inverse diode forward voltage
VSD
VGS =0V, IF =7.3A
-
1
1.2
V
Reverse recovery time
trr
VR =350V, IF=lS,
-
750
1275
ns
Reverse recovery charge
Qrr
diF /dt=100A/µs
-
4.9
-
µC
3
2001-07-25
SPU07N60S5
SPD07N60S5
Preliminary data
Power dissipation
Drain current
Ptot = f (TC )
ID = f (TC )
parameter: VGS ≥ 10 V
100
SPU07N60S5
8
W
SPU07N60S5
A
80
6
ID
Ptot
70
60
5
50
4
40
3
30
2
20
1
10
0
0
20
40
60
80
100
120
°C
0
0
160
20
40
60
80
100
°C
120
TC
Safe operating area
Transient thermal impedance
ID=f (VDS)
ZthJC = f (tp )
parameter: D=0.01, TC =25°C
parameter : D = tp /T
10
160
TC
2 SPU07N60S5
10 1
K/W
A
10 0
DS
(
on
)
=
V
DS
ID
/I
D
10 1
Z thJC
tp = 15.0µs
R
100 µs
10 0
10 -1
1 ms
10 ms
10 -1 0
10
DC
10
1
10
2
V
10
10 -2 -5
10
3
VDS
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
4
2001-07-25
SPU07N60S5
SPD07N60S5
Preliminary data
Typ. output characteristic
Drain-source on-resistance
ID = f (VDS)
RDS(on) = f (Tj )
Parameter: VGS, Tj = 25 °C
parameter : ID = 4.6 A, VGS = 10 V
24
3.4
SPU07N60S5
Ω
20V
A
2.8
16
RDS(on)
ID
12V
10V
12
2.4
2
1.6
9V
1.2
8
8V
98%
0.8
typ
4
0.4
7V
6V
0
0
5
10
15
0
-60
25
V
-20
20
60
100
°C
VDS
180
Tj
Typ. transfer characteristics
Typ. capacitances
ID = f ( VGS )
C = f (VDS)
VDS≥ 2 x ID x RDS(on)max
parameter: VGS =0 V, f=1 MHz
10 4
24
pF
A
Ciss
16
C
ID
10
3
Coss
10 2
12
8
10 1
Crss
4
0
0
4
8
12
10 0
0
20
VGS
V
5
10
20
30
40
50
60
70
80
V 100
VDS
2001-07-25
SPU07N60S5
SPD07N60S5
Preliminary data
Avalanche energy
Avalanche SOA
EAS = f (Tj )
IAR = f (tAR )
par.: ID =5.5A, VDD =50V
par.: Tj ≤ 150 °C
260
8
mJ
A
220
6
180
IAR
EAS
200
160
5
Tj (START) =25°C
140
4
120
100
3
Tj (START) =125°C
80
2
60
40
1
20
0
20
40
60
80
100
°C
120
0 -3
10
160
10
-2
10
-1
10
0
10
1
10
2
4
µs 10
tAR
Tj
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS = f (Tj )
VGS(th) = f (Tj)
parameter: VGS = VDS , ID = 350 µA
SPU07N60S5
7
720
V
680
V GS(th)
V (BR)DSS
V
660
5
max.
4
640
typ.
620
3
600
min.
2
580
1
560
540
-60
-20
20
60
100
°C
0
-60
180
Tj
-20
20
60
100
°C
180
Tj
6
2001-07-25
SPU07N60S5
SPD07N60S5
Preliminary data
Forward characteristics of reverse diode
Typ. gate charge
IF = f (VSD )
VGS = f (QGate )
parameter: Tj , tp = 10 µs
parameter: ID = 7.3 A pulsed
10 2
SPU07N60S5
16
SPU07N60S5
V
A
12
VGS
IF
10
1
0,2 VDS max
0,8 VDS max
10
8
6
10 0
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
2
Tj = 150 °C (98%)
10 -1
0
0.4
0.8
1.2
1.6
2
2.4
V
0
0
3
VSD
4
8
12
16
20
24
28
32 nC 38
Qg
7
2001-07-25
SPU07N60S5
SPD07N60S5
Preliminary data
P-TO252 (D-Pak)
dimensions
symbol
A
[mm]
inch]
min
max
min
max
6.40
6.73
0.2520
0.2650
0.2067
0.2165
B
5.25
5.50
C
(0.65)
(1.15)
D
0.63
E
(0.0256) (0.0453)
0.89
0.0248
2.39
0.2520
0.0862
0.0941
2.28
0.0350
F
2.19
G
0.76
0.98
0.0299
0.0386
H
0.90
1.21
0.0354
0.0476
K
5.97
6.23
0.2350
0.2453
L
9.40
10.40
0.3701
0.4094
M
0.46
0.58
0.0181
0.0228
N
0.87
1.15
0.0343
0.0453
P
0.51
-
0.0201
-
R
5.00
-
0.1969
-
S
4.17
-
0.1642
-
T
U
0.26
-
1.02
-
0.0102
-
0.0402
-
P-TO251 (I-Pak)
dimensions
symbol
A
[inch]
min
max
min
max
6.47
6.73
0.2547
0.2650
B
5.25
5.41
0.2067
0.2130
C
4.19
4.43
0.1650
0.1744
D
0.63
0.89
0.0248
0.0350
E
2.29 typ.
2.18
2.39
F
8
[mm]
0.0902 typ.
0.0858
0.0941
G
0.76
0.86
0.0299
0.0339
H
1.01
1.11
0.0398
0.0437
K
5.97
6.23
0.2350
0.2453
L
9.14
9.65
0.3598
0.3799
M
N
0.46
0.98
0.56
1.15
0.0181
0.0386
0.0220
0.0453
2001-07-25
Preliminary data
SPU07N60S5
SPD07N60S5
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
9
2001-07-25