SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS™==Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology Product Summary • Worldwide best RDS(on) in TO-251 and TO-252 • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS(on) 0.6 Ω • Extreme dv/dt rated ID 7.3 A P-TO252 •=Optimized capacitances P-TO251-3-1 •=Improved noise immunity •=Former development designation: SPUx3N60S5/SPDx3N60S5 Type Package Ordering Code Marking SPU07N60S5 P-TO251-3-1 Q67040-S4196 07N60S5 SPD07N60S5 P-TO252 Q67040-S4186 07N60S5 D,2 G,1 S,3 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC=25°C 7.3 TC=100°C 4.6 ID puls 14.6 EAS 230 EAR 0.5 Avalanche current (repetitive, limited by Tjmax ) IAR 7.3 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 83 W -55... +150 °C Pulsed drain current 1) TC=25°C Avalanche energy, single pulse mJ ID = 5.5 A, VDD = 50 V Avalanche energy (repetitive, limited by Tjmax ) ID = 7.3 A , VDD = 50 V A kV/µs IS =7.3A, VDS<VDSS , di/dt=100A/µs, Tjmax =150°C TC=25°C Operating and storage temperature Tj , Tstg 1 2001-07-25 SPU07N60S5 SPD07N60S5 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Thermal Characteristics Thermal resistance, junction - case RthJC - - 1.5 Thermal resistance, junction - ambient RthJA - - 75 @ min. footprint - - 75 @ 6 cm2 cooling area 2) - - 50 K/W (Leaded and through-hole packages) SMD version, device on PCB: RthJA Static Characteristics, at Tj = 25 °C, unless otherwise specified Drain-source breakdown voltage V(BR)DSS 600 - - V VGS(th) 3.5 4.5 5.5 VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 350 µA, Tj = 25 °C Zero gate voltage drain current, VDS=VDSS µA IDSS VGS = 0 V, Tj = 25 °C - 0.5 1 VGS = 0 V, Tj = 150 °C - - 100 IGSS - - 100 nA RDS(on) - 0.54 0.6 Ω Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-source on-state resistance VGS = 10 V, ID = 4.6 A 1current limited by T jmax 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm² (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. 2 2001-07-25 SPU07N60S5 SPD07N60S5 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 4 - S pF Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max , ID =4.6A Input capacitance Ciss VGS =0V, VDS =25V, - 970 - Output capacitance Coss f=1MHz - 370 - Reverse transfer capacitance Crss - 10 - Turn-on delay time td(on) VDD =350V, VGS =10V, - 120 - Rise time tr ID =7.3A, RG=12Ω - 40 - Turn-off delay time td(off) - 170 255 Fall time tf - 20 30 - 7.5 - - 16.5 - - 27 35 - - 7.3 - - 14.6 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Total gate charge Qg VDD =350V, ID =7.3A VDD =350V, ID =7.3A, nC VGS =0 to 10V Reverse Diode Inverse diode continuous IS TC=25°C A forward current Inverse diode direct ISM current,pulsed Inverse diode forward voltage VSD VGS =0V, IF =7.3A - 1 1.2 V Reverse recovery time trr VR =350V, IF=lS, - 750 1275 ns Reverse recovery charge Qrr diF /dt=100A/µs - 4.9 - µC 3 2001-07-25 SPU07N60S5 SPD07N60S5 Preliminary data Power dissipation Drain current Ptot = f (TC ) ID = f (TC ) parameter: VGS ≥ 10 V 100 SPU07N60S5 8 W SPU07N60S5 A 80 6 ID Ptot 70 60 5 50 4 40 3 30 2 20 1 10 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 °C 120 TC Safe operating area Transient thermal impedance ID=f (VDS) ZthJC = f (tp ) parameter: D=0.01, TC =25°C parameter : D = tp /T 10 160 TC 2 SPU07N60S5 10 1 K/W A 10 0 DS ( on ) = V DS ID /I D 10 1 Z thJC tp = 15.0µs R 100 µs 10 0 10 -1 1 ms 10 ms 10 -1 0 10 DC 10 1 10 2 V 10 10 -2 -5 10 3 VDS 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 2001-07-25 SPU07N60S5 SPD07N60S5 Preliminary data Typ. output characteristic Drain-source on-resistance ID = f (VDS) RDS(on) = f (Tj ) Parameter: VGS, Tj = 25 °C parameter : ID = 4.6 A, VGS = 10 V 24 3.4 SPU07N60S5 Ω 20V A 2.8 16 RDS(on) ID 12V 10V 12 2.4 2 1.6 9V 1.2 8 8V 98% 0.8 typ 4 0.4 7V 6V 0 0 5 10 15 0 -60 25 V -20 20 60 100 °C VDS 180 Tj Typ. transfer characteristics Typ. capacitances ID = f ( VGS ) C = f (VDS) VDS≥ 2 x ID x RDS(on)max parameter: VGS =0 V, f=1 MHz 10 4 24 pF A Ciss 16 C ID 10 3 Coss 10 2 12 8 10 1 Crss 4 0 0 4 8 12 10 0 0 20 VGS V 5 10 20 30 40 50 60 70 80 V 100 VDS 2001-07-25 SPU07N60S5 SPD07N60S5 Preliminary data Avalanche energy Avalanche SOA EAS = f (Tj ) IAR = f (tAR ) par.: ID =5.5A, VDD =50V par.: Tj ≤ 150 °C 260 8 mJ A 220 6 180 IAR EAS 200 160 5 Tj (START) =25°C 140 4 120 100 3 Tj (START) =125°C 80 2 60 40 1 20 0 20 40 60 80 100 °C 120 0 -3 10 160 10 -2 10 -1 10 0 10 1 10 2 4 µs 10 tAR Tj Drain-source breakdown voltage Gate threshold voltage V(BR)DSS = f (Tj ) VGS(th) = f (Tj) parameter: VGS = VDS , ID = 350 µA SPU07N60S5 7 720 V 680 V GS(th) V (BR)DSS V 660 5 max. 4 640 typ. 620 3 600 min. 2 580 1 560 540 -60 -20 20 60 100 °C 0 -60 180 Tj -20 20 60 100 °C 180 Tj 6 2001-07-25 SPU07N60S5 SPD07N60S5 Preliminary data Forward characteristics of reverse diode Typ. gate charge IF = f (VSD ) VGS = f (QGate ) parameter: Tj , tp = 10 µs parameter: ID = 7.3 A pulsed 10 2 SPU07N60S5 16 SPU07N60S5 V A 12 VGS IF 10 1 0,2 VDS max 0,8 VDS max 10 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 0 0 3 VSD 4 8 12 16 20 24 28 32 nC 38 Qg 7 2001-07-25 SPU07N60S5 SPD07N60S5 Preliminary data P-TO252 (D-Pak) dimensions symbol A [mm] inch] min max min max 6.40 6.73 0.2520 0.2650 0.2067 0.2165 B 5.25 5.50 C (0.65) (1.15) D 0.63 E (0.0256) (0.0453) 0.89 0.0248 2.39 0.2520 0.0862 0.0941 2.28 0.0350 F 2.19 G 0.76 0.98 0.0299 0.0386 H 0.90 1.21 0.0354 0.0476 K 5.97 6.23 0.2350 0.2453 L 9.40 10.40 0.3701 0.4094 M 0.46 0.58 0.0181 0.0228 N 0.87 1.15 0.0343 0.0453 P 0.51 - 0.0201 - R 5.00 - 0.1969 - S 4.17 - 0.1642 - T U 0.26 - 1.02 - 0.0102 - 0.0402 - P-TO251 (I-Pak) dimensions symbol A [inch] min max min max 6.47 6.73 0.2547 0.2650 B 5.25 5.41 0.2067 0.2130 C 4.19 4.43 0.1650 0.1744 D 0.63 0.89 0.0248 0.0350 E 2.29 typ. 2.18 2.39 F 8 [mm] 0.0902 typ. 0.0858 0.0941 G 0.76 0.86 0.0299 0.0339 H 1.01 1.11 0.0398 0.0437 K 5.97 6.23 0.2350 0.2453 L 9.14 9.65 0.3598 0.3799 M N 0.46 0.98 0.56 1.15 0.0181 0.0386 0.0220 0.0453 2001-07-25 Preliminary data SPU07N60S5 SPD07N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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