Si7686DP New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 35 0.014 @ VGS = 4.5 V 35 VDS (V) 30 Qg (Typ) 9 2 nC 9.2 TrenchFET Power MOSFET New Low Thermal Resistance PowerPAK Package with Low 1.07mm Profile Optimized for High-Side Synchronous Rectifier Operation 100% Rg Tested COMPLIANT APPLICATIONS PowerPAK SO-8 DC/DC Converters S 6.15 mm RoHS D 5.15 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D S 5 N-Channel MOSFET Bottom View Ordering Information: Si7686DP-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED) Symbol Limit Drain-Source Voltage Parameter VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150C) TA = 25C 35a ID 17.9b, c 14.3b, c TA = 70C Pulsed Drain Current IDM Continuous Source-Drain Source Drain Diode Current TC = 25C TA = 25C Maximum Power Dissipation TA = 25C 31.5 IS 4.2b, c 37.9 24.2 PD W 5b, c 3.2b, c TA = 70C Operating Junction and Storage Temperature Range A 50 TC = 25C TC = 70C V 35a TC = 25C TC = 70C Unit TJ, Tstg –55 to 150 Soldering Recommendations (Peak Temperature)d, e C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Symbol Typical Maximum t p 10 sec RthJA 21 25 Steady State RthJC 2.8 3.3 Unit C/W Notes: a. Package Limited. b. Surface mounted on 1” x 1” FR4 board. c. t = 10 sec d. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 C/W. Document Number: 73451 S–51334—Rev. A, 25-Jul-05 www.vishay.com 1 Si7686DP New Product Vishay Siliconix SPECIFICATIONS (TJ = 25C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS VGS = 0 V, ID = 250 mA 30 Typ Max Unit Static Drain-Source Breakdown Voltage DVDS/TJ VDS Temperature Coefficient DVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductancea gfs 31.3 ID = 250 mA VGS(th) Temperature Coefficient V mV/C –6 3 V VDS = 0 V, VGS = "20 V "100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55C 10 VDS w 5 V, VGS = 10 V 1 50 mA A VGS = 10 V, ID = 13.8 A 0.0078 0.0095 VGS = 4.5 V, ID = 11.4 A 0.011 0.014 VDS = 15 V, ID = 13.8 A 56 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1220 VDS = 15 V, VGS = 0 V, f = 1 MHz td(off) pF 98 VDS = 15 V, VGS = 10 V, ID = 13.8 A VDS = 15 V, VGS = 5 V, ID= 13.8 A 17 26 9.2 14 nC 4.1 2.8 f = 1 MHz td(on) tr 230 VDD = 15 V, RL = 1.5 W ID ^ 10 A, VGEN = 4.5 V, Rg = 1 W 0.8 1.2 20 30 20 30 20 30 tf 8 15 td(on) 13 20 16 25 23 35 8 15 tr td(off) VDD = 15 V, RL = 1.5 W ID ^ 10 A, VGEN = 10 V, Rg = 1 W tf W ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25C 31.5 A 50 IS = 2.6 A IF = 2.6 2 6 A, A di/dt = 100 A/ms, A/ms TJ = 25C 0.8 1.2 V 25 50 ns 15 30 nC 12.5 12.5 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73451 S–51334—Rev. A, 25-Jul-05 Si7686DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Output Characteristics Transfer Characteristics 10 VGS = 10 thru 4 V 40 I D – Drain Current (A) I D – Drain Current (A) 50 30 20 8 6 4 TC = 125C 10 2 25C 3V –55C 0 0.0 0.4 0.8 1.2 1.6 0 0.0 2.0 0.5 VDS – Drain-to-Source Voltage (V) 1.0 2.0 2.5 3.0 3.5 VGS – Gate-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current and Gate Voltage 0.0140 1500 0.0120 1200 Ciss VGS = 4.5 V C – Capacitance (pF) rDS(on) – On-Resistance (mW) 1.5 0.0100 VGS = 10 V 0.0080 900 600 Coss 0.0060 300 Crss 0.0040 0 0 10 20 30 40 50 0 5 15 20 25 30 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) On-Resistance vs. Junction Temperature Gate Charge 10 1.8 ID = 13.8 A 1.6 8 rDS(on) – On-Resiistance (Normalized) V GS – Gate-to-Source Voltage (V) 10 VDS = 15 V 6 VDS = 21 V 4 2 ID = 13.8 A VGS = 10 V 1.4 VGS = 4.5 V 1.2 1.0 0.8 0 0 4 8 12 Qg – Total Gate Charge (nC) Document Number: 73451 S–51334—Rev. A, 25-Jul-05 16 20 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com 3 Si7686DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.030 rDS(on) – Drain-to-Source On-Resistance (W) I S – Source Current (A) 50 TJ = 150C 10 TJ = 25C 0.025 0.020 TJ = 125C 0.015 TJ = 25C 0.010 0.005 1 0.00 ID = 13.8 A 0.2 0.4 0.6 0.8 1.0 3 1.2 4 5 VSD – Source-to-Drain Voltage (V) 6 7 8 9 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 2.6 50 2.4 40 2.0 Power (W) VGS(th) (V) 2.2 ID = 250 mA 1.8 1.6 30 20 1.4 10 1.2 1.0 –50 –25 0 25 50 75 100 125 0 0.01 150 0.1 1 TJ – Temperature (C) 10 100 600 Time (sec) Safe Operating Area, Junction-to-Ambient 100 *Limited by rDS(on) 10 I D – Drain Current (A) 1 ms 10 ms 1 100 ms 1s 10 s 0.1 dc 0.01 TA = 25C Single Pulse 0.001 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 4 Document Number: 73451 S–51334—Rev. A, 25-Jul-05 Si7686DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Current De-Rating* Power De-Rating 40 60 35 50 25 Power ID – Drain Current (A) 30 40 30 Package Limited 20 15 20 10 10 5 0 0 0 25 50 75 100 TC – Case Temperature (C) 125 150 25 50 75 100 125 150 TC – Case Temperature (C) *The power dissipation PD is based on TJ(max) = 150C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73451 S–51334—Rev. A, 25-Jul-05 www.vishay.com 5 Si7686DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 10–2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73451. www.vishay.com 6 Document Number: 73451 S–51334—Rev. A, 25-Jul-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1