IRF G450HHBK06P2

PD-97013A
HiRelTM INT-A-Pak 2, PLASTIC
HALF-BRIDGE IGBT MODULE
G450HHBK06P2
Product Summary
Part Number
VCE
IC
VCE(SAT)
G450HHBK06P2
600V
450A
1.8
HiRelTM INT-A-Pak 2
The HiRelTM INT-A-Pak series are isolated near
hermetic power modules which combine the latest
IGBT and Soft Recovery Rectifier Technology. The
module uses both high-speed and low Vce(sat)
IGBT's packaged for ultra low thermal resistance
junction to case. The G450HHBK06P2 power
module consists of six IGBT's and six FRED's in a
Phase- Leg or Half-Bridge configuration.
Features:
n Rugged, Lightweight near Hermetic Package
with Integrated Power Terminal Cap
Gen IV IGBT Technology
Soft Recovery Rectifiers
Ultra-Low Thermal Resistance
Zener Gate Protection
Very Low Conduction and Switching Loss
-55°C to +125°C Operating Temperature
Screening to meet the intent of
MIL-PRF-38534 Class H
n Short Circuit Capability
n 2.0 Ohms Series Gate Resistor
n High Altitude Operation, 85,000 Feet Above
Sea Level at Rated Voltage
n
n
n
n
n
n
n
Absolute Maximum Ratings @ Tj=25°C (unless otherwise specified)
Symbol
Value
Collector-to-Emitter Voltage
Parameter
VCES
600
Gate-to-Emitter Voltage
VGE
±20
Continuous Collector Current @ Tc = 25°C
Continuous Collector Current @ Tc = 70°C
Isolation Voltage
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IC
VISOL
600
450
2500
Units
V
A
VRMS
1
11/08/05
G450HHBK06P2
Electrical Characteristics @ Tj = 25°C (unless otherwise specified)
Parameter
Off Characteristics
Collector Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate Emitter Leakage Current
Symbol
Test Conditions
VCES
VGE = 0V
ICES
IGES
VGE =0V, VCE = 600V
VGE = ±15V, VCE = 0V
Min.
Typ.
Max.
Units
600
-
-
2.0
-
-
10
V
mA
µA
4.0
-
7.5
-
1.8
2.6
On Characteristics
Gate Threshold Voltage
Collector Emitter Saturation Voltage
VGE(TH) VCE = VGE, IC = 45mA
VCE(SAT) VGE = 15V, IC = 450A
V
Dynamic Characteristics
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
CIES
VCE = 300V, IC = 450A, VGE = 15V
-
2,600
-
nC
COES
CRES
VGE = 0V, VCE = 25V, f = 1.0MHz
-
48
3.0
-
nF
-
0.3
-
-
800
900
-
460
45
700
-
2800
3400
-
400
60
500
-
mJ
Switching Inductive Load Characteristics
Turn-On Delay Time
Rise Time
Turn-On Losses
Turn-Off Delay Time
Fall Time
Turn-Off Losses
td(on)
tr
Eon
td(off)
VCC = 300V, IC = 450A, VGE =15V
RG(on) = 20Ω, RG(off) =10Ω, L=100µH
tf
Eoff
ns
mJ
ns
Diode Characteristics
Forward Voltage
VF
IF = 450A
-
1.2
1.8
V
Reverse Recovery Charge
Peak Reverse Recovery Current
Qrr
Irr
VR =300V, IC =450A, di/dt =-1100A/µs
-
9.5
105
12
-
µC
A
Reverse Recovery Time
trr
-
160
170
ns
2
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G450HHBK06P2
Electrical Characteristics @ Tj = 125°C (unless otherwise specified)
Parameter
Off Characteristics
Symbol
Collector Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate Emitter Leakage Current
Test Conditions
VCES
ICES
VGE = 0V
VGE =0V, VCE = 600V
IGES
VGE = ±15V, VCE = 0V
Min.
Typ.
Max.
Units
600
-
-
V
-
-
18
10
mA
µA
4.0
-
1.8
7.5
2.6
V
-
1.2
1.8
V
On Characteristics
Gate Threshold Voltage
Collector Emitter Saturation Voltage
VGE(TH) VCE = VGE, IC = 45mA
VCE(SAT) VGE = 15V, IC = 450A
Diode Characteristics
VF
Forward Voltage
IF = 450A
Thermal-Mechanical Specifications
Parameter
Symbol
IGBT Thermal Resistance, Junction to Case, per Switch
Min
Max
-
0.07
TJ
-55
0.12
150
TSTG
-55
125
T
-
26
in-lbs
-
270
g
RthJC
Diode Thermal Resistance, Junction to Case, per Switch
Operating Junction Temperature Range
Storage Temperature Range
Screw Torque - Mounting
Screw Torque - Terminals
Module Weight
Units
°C/W
°C
Module Screening
Test or Inspection
MIL-STD-883
Method
Condition
Internal Visual
2017
Temperature Cycle
1010
Mechanical Shock
Burn-in
B
10 Cycles, -55°C to +125°C
2002
B
1500G, 0.5ms, 5 Times (Y1 direction only)
1015
A
Final Electrical Test
External Visual
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Comments
160 Hrs @ +125°C
Group A, -55°C, +25°C, +125°C
2009
3
G450HHBK06P2
Maximum DC Collector Current (A)
Schematic
TC, Case Temperature (°C)
Fig 1: Maximum Collector Current Vs Case Temperature
4
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G450HHBK06P2
90% Vge
+Vge
Vce
Ic
90% Ic
10% Vce
Ic
5% Ic
td(off)
tf
Eoff =
∫
t1+5µS
Vce ic dt
Vcet1Ic dt
t1
Fig. 2 - Test Circuit for Measurement of Eon,
Fig. 3 - Test Waveforms for Circuit of Fig. 2,
Defining Eoff, td(off), tf
Eoff, trr, Qrr, Irr, td(on), tr, td(off), tf
GATE VOLTAGE D.U.T.
10% +Vg
t2
trr
Qrr =
Ic
∫
trr
id
Ic dtdt
tx
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
Vcc
10% Ic
90% Ic
Ipk
Ic
DIODE RECOVERY
WAVEFORMS
tr
td(on)
5% Vce
t1
∫
t2
VceieIcdt dt
Eon = Vce
t1
t2
DIODE REVERSE
RECOVERY ENERGY
t3
∫
t4
Erec = Vd
VcidIcdt dt
t3
t4
Fig. 3 - Test Waveforms for Circuit of Fig. 2,
Fig. 4 - Test Waveforms for Circuit of Fig. 2,
Defining Eon, td(on), tr
Defining Erec, trr, Qrr, Irr
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5
G450HHBK06P2
Case Outline and Dimensions - HiRelTM INT-A-Pak 2
Notes: 1) All dimensions are in inches
2) Unless otherwise specified,
Tolerances .XX = ±0.01, .XXX = ±0.005
Part numbering Nomenclature
G 450 HH B K
06 P2 H
Screening Level
P = Unscreened, 25°C Electrical Test
( Not intended for Qualification)
H = Screened per MIL-PRF-38534
IGBT Module - Hirel
Current Capability
Package Type
450 = 450 Amps
P2 = HiRel TM INT-A-Pak 2,
2.5" X 4.0" X 1.0"
Circuit Configuration
Voltage
HH = Half Bridge
06 = 600V
Generation
IGBT / FWD Configuration
B = GEN 4 / GEN 3
IGBT Speed / SC Capability
K = Fast, SC Capable
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR LEOMINSTER: 205 Crawford St., Leominster, Massachusetts 01453, Tel: (978) 534-5776
Data and specifications subject to change without notice.
11/05
6
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