PD - 96929
IRG4BC30FD-S
Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
HYPERFAST DIODE
C
VCES = 600V
Features
Fast: optimized for medium operating frequencies
(1-5 kHz in hard switching, >20kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3.
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft
recovery anti-parallel diodes for use in bridge configurations.
VCE(on) typ. = 1.59V
G
@VGE = 15V, IC = 17A
E
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specific application conditions.
HEXFRED diodes optimized for performance with IGBT's.
Minimized recovery characteristics require less/no
snubbing.
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's.
D2Pak
Absolute Maximum Ratings
Max.
Units
VCES
Collector-to-Emitter Voltage
Parameter
600
V
IC @ TC = 25°C
Continuous Collector Current
31
IC @ TC = 100°C
ICM
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
ILM
Clamped Inductive Load current
IF @ TC = 100°C
Diode Continuous Forward Current
12
IFM
Diode Maximum Forward Current
120
VGE
Gate-to-Emitter Voltage
±20
V
PD @ TC = 25°C
Maximum Power Dissipation
100
W
d
17
c
120
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
A
120
42
-55 to +150
°C
Thermal / Mechanical Characteristics
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case- IGBT
Parameter
–––
–––
1.2
°C/W
RθCS
Case-to-Sink, flat, greased surface
–––
0.50
–––
g
RθJA
Junction-to-Ambient (PCB Mounted,steady state)
–––
–––
40
Wt
Weight
–––
2.0 (0.07)
–––
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g (oz.)
1
12/02/04
IRG4BC30FD-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES
Collector-to-Emitter Breakdown Voltage
e
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Voltage
Min. Typ. Max. Units
600
—
—
—
0.69
—
—
1.59
1.8
—
1.99
—
—
1.7
—
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
∆VGE(th)/∆TJ
Threshold Voltage temp. coefficient
—
-11
—
gfe
ICES
Forward Transconductance
Zero Gate Voltage Collector Current
6.1
10
—
—
—
250
—
—
2500
—
1.4
1.7
—
1.3
1.6
—
—
±100
VFM
f
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
V
Conditions
VGE = 0V, IC = 250µA
V/°C VGE = 0V, IC = 1mA
IC = 17A
V
VGE = 15V
IC = 31A
See Fig. 2, 5
IC = 17A, TJ = 150°C
V
VCE = VGE, IC = 250µA
mV/°C VCE = VGE, IC = 250µA
S VCE = 100V, IC = 17A
µA
VGE = 0V, VCE = 600V
V
IF = 12A
VGE = 0V, VCE = 600V, TJ = 150°C
See Fig. 13
IF = 12A, TJ = 150°C
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Total Gate Charge (turn-on)
Min. Typ. Max. Units
—
51
Conditions
IC = 17A
77
VCC = 400V
Qge
Gate-to-Emitter Charge (turn-on)
—
7.9
12
Qgc
Gate-to-Collector Charge (turn-on)
—
19
28
td(on)
Turn-On delay time
—
42
—
tr
Rise time
—
26
—
td(off)
Turn-Off delay time
—
230
350
VGE = 15V, RG = 23Ω
tf
Fall time
—
160
230
Energy losses inlcude "tail" and
Eon
Turn-On Switching Loss
—
0.63
—
Eoff
Turn-Off Switching Loss
—
1.39
—
Ets
Total Switching Loss
—
2.02
3.9
td(on)
Turn-On delay time
—
42
—
tr
Rise time
—
27
—
nC
See Fig. 8
VGE = 15V
TJ = 25°C
ns
IC = 17A, VCC = 480V
diode reverse recovery.
mJ
See Fig. 9, 10, 11, 18
TJ = 150°C
ns
See Fig. 9,10,11,18
IC = 17A, VCC = 480V
td(off)
Turn-Off delay time
—
310
—
VGE = 15V, RG = 23Ω
tf
Fall time
—
310
—
Energy losses inlcude "tail" and
Ets
Total Switching Loss
—
3.2
—
mJ
diode reverse recovery.
LE
Internal Emitter Inductance
—
7.5
—
nH
Cies
Input Capacitance
—
1100
—
Measured 5mm from package
VGE = 0V
—
pF
VCC = 30V
Coes
Output Capacitance
—
74
Cres
Reverse Transfer Capacitance
—
14
—
trr
Diode Reverse Recovery Time
—
42
60
—
80
120
6.0
Irr
Diode Peak Reverse Recovery Current
—
3.5
—
5.6
10
Qrr
Diode Reverse Recovery Charge
—
80
180
220
600
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
—
180
—
During tb
—
120
—
2
See Fig. 7
f = 1.0MHz
ns
TJ = 25°C
TJ = 125°C
A
TJ = 25°C
TJ = 125°C
nC
TJ = 25°C
TJ = 125°C
A/µs TJ = 25°C
TJ = 125°C
See Fig.
14
IF = 12A
See Fig.
15
VR = 200V
See Fig.
16
di/dt 200A/µs
See Fig.
17
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IRG4BC30FD-S
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IRG4BC30FD-S
4
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IRG4BC30FD-S
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IRG4BC30FD-S
6
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IRG4BC30FD-S
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7
IRG4BC30FD-S
90% Vge
Same type
device as
D.U.T.
+Vge
Vce
430µF
80%
of Vce
D.U.T.
Ic
90% Ic
10% Vce
Ic
5% Ic
td(off)
tf
Eoff =
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
∫
t1+5µS
Vce icIcdtdt
Vce
t1
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T.
10% +Vg
trr
Ic
Qrr =
DUT VOLTAGE
AND CURRENT
Vce
10% Ic
90% Ic
tr
td(on)
Ipk
Vpk
10% Irr
Vcc
Irr
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
t1
t2
Eon = Vce
VceieIcdt dt
t1
∫
t2
DIODE REVERSE
RECOVERY ENERGY
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
∫
+Vg
tx
10% Vcc
Vcc
trr
id
Ic dtdt
tx
t4
Erec = Vd
VdidIcdt dt
t3
∫
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4BC30FD-S
Vg GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Fig.18e - Macro Waveforms for Figure 18a's Test Circuit
D.U.T.
L
1000V
Vc*
RL=
0 - 480V
480V
4 X IC @25°C
50V
6000µF
100V
Fig. 19 - Clamped Inductive Load Test Circuit
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Fig. 20 - Pulsed Collector Current
Test Circuit
9
IRG4BC30FD-S
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
7+,6,6$1,5)6:,7+
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(/
,17(51$7,21$/
5(&7,),(5
/2*2
$66(0%/<
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3$57180%(5
)6
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5(&7,),(5
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352'8&7237,21$/
<($5 :((.
$ $66(0%/<6,7(&2'(
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IRG4BC30FD-S
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
3
4
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20).
VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19).
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
When mounted on 1" square PCB (FR-4 or G-10 Material).
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/04
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