HI-SINCERITY Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2004.09.07 Page No. : 1/4 MICROELECTRONICS CORP. HMBTA64 PNP SILICON TRANSISTOR Description The HMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA. SOT-23 Features • High D.C. Current Gain • For Complementary use with NPN Type HMBTA14 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 225 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage .......................................................................................................................... -30 V VCES Collector to Emitter Voltage ....................................................................................................................... -30 V VEBO Emitter to Base Voltage ............................................................................................................................. -10 V IC Collector Current ...................................................................................................................................... -500 mA Electrical Characteristics (TA=25°C) Symbol Min. Typ. Max. Unit BVCBO -30 - - V IC=-100uA BVCES -30 - - V IC=-100uA BVEBO -10 - - V IE=-10uA ICBO - - -100 nA VCB=-30V IEBO - - -100 nA VEB=-10V *VCE(sat) - - -1.5 V IC=-100mA, IB=-0.1mA VBE(on) - - -2 V IC=-100mA, VCE=-5V *hFE1 10K - - IC=-10mA, VCE=-5V *hFE2 20K - - IC=-100mA, VCE=-5V fT 125 - - MHz Test Conditions IC=-100mA, VCE=-5V, f=100MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% HMBTA64 HSMC Product Specification HI-SINCERITY Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2004.09.07 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Saturation Voltage & Collector Current 100000 Saturation Voltage (mV) 10000 hFE VCE=5V 10000 1000 1000 VCE(s at) @ IC=1000IB 100 10 100 1000 1 10 Collector Current (mA) 100 1000 Collector Current (mA) On Voltage & Collector Current Capacitance & Reverse-Biased Voltage 10 Capacitance (Pf) On Voltage (mV) 100 10 Cob VBE(on) @ VCE=5V 1 1 1 10 100 1000 1 10 Collector Current (mA) 100 Reverse Biased Voltage (V) Cutoff Frequency & IC Safe Operating Area 10000 1000 Collector Current (mA) Cutoff Frequency (MHz) PT=1ms 1000 fT 100 PT=100ms 100 PT=1s 10 10 1 1 10 100 Collector Current (mA) HMBTA64 1000 1 10 100 Forward Voltage (V) HSMC Product Specification HI-SINCERITY Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2004.09.07 Page No. : 3/4 MICROELECTRONICS CORP. SOT-23 Dimension DIM A B C D G H J K L S V Marking: A L 2 Pb-Free: " " (Note) Normal: None B S 1 V V Pb Free Mark 3 Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. 2 G Pin Style: 1.Base 2.Emitter 3.Collector Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 C D H K Min. 2.80 1.20 0.89 0.30 1.70 0.013 0.085 0.32 0.85 2.10 0.25 Max. 3.04 1.60 1.30 0.50 2.30 0.10 0.177 0.67 1.15 2.75 0.65 *: Typical, Unit: mm J 3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HMBTA64 HSMC Product Specification HI-SINCERITY Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2004.09.07 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HMBTA64 o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification