Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Advance Information MMM5063/D Rev. 0.2, 09/2003 MMM5063 Tri-Band GSM GPRS 3.5 V Power Amplifier (Scale 1:1) ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5063 See Figure 25 Module The MMM5063 is a tri-band single supply RF Power Amplifier for GSM900/DCS1800/ PCS1900 GPRS handheld radios. This fully integrated Power Amplifier uses a patented concept to realize the 50 Ω matching on-chip through integration of passives on the GaAs die. This allows module functionality in a very small 7 x 7 mm package and achieves best-inclass Power Amplifier performance and multi-band capability. Applications: • Tri-Band GSM900 DCS1800 and PCS1900 • Guaranteed for 25% Duty Cycle Features: • Single Supply Enhancement Mode GaAs MESFET Technology • Internal 50 Ω Input/Output Matching • High Gain Three Stage Amplifier Design • Typical 3.5 V Characteristics: Pout = 35.2 dBm, PAE = 53% for GSM Pout = 33.8 dBm, PAE = 44% for DCS Pout = 34 dBm, PAE = 43% for PCS • Optimized and Guaranteed for Open-Loop Power Control Applications • Small 7 x 7 mm Package This document contains information on a pre-production product. Specifications and Pre-production information herein are subject to change without notice. © Motorola, Inc., 2003. All rights reserved. For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Electrical Specifications ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 VDCS1 VDCS3 VDCS2 DCS/PCS In Vreg Vapc DCS/PCS AMP GSM In DCS/PCS Out GSM Out GSM AMP VGSM1 VGSM2 VGSM3 VBS VdB ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... This device contains 26 active transistors. Figure 1. Simplified Block Diagram 1 Electrical Specifications Table 1. Maximum Ratings Rating Symbol Value Unit Supply Voltage VGSM1,2,3, VDCS1,2,3, VdB 6.0 V RF Input Power GSM IN, DCS/PCS IN 11 dBm GSM OUT DCS/PCS OUT 38 36 Operating Case Temperature Range TC -35 to 100 °C Storage Temperature Range Tstg -55 to 150 °C TJ 150 °C RF Output Power GSM Section DCS/PCS Section Die Temperature dBm NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics or Recommended Operating Conditions tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤150 V and Machine Model (MM) ≤50 V. Additional ESD data available upon request. 3. Meets Moisture Sensitivity Level (MSL) 3. See Figure 25 on page 17 for additional details. 2 MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com MOTOROLA Freescale Semiconductor, Inc.Electrical Specifications ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Table 2. Recommended Operating Conditions Characteristic Symbol Min Typ Max Unit Drain Supply Voltage VGSM1,2,3, VDCS1,2,3 2.7 - 5.5 V Bias Supply Voltage VdB 2.7 - 5.5 V Regulated Voltage VREG 2.5 2.8 3.0 V Power Control Voltage Vapc 0 1.8 2.8 V Band Select VBS 0 2.8 3.0 V GSM IN -1.0 - 8.0 dBm DCS/PCS IN 2.0 - 10 dBm ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... Input Power GSM Input Power DCS/PCS Table 3. Control Requirements Characteristic Symbol Min Typ Max Unit Current for Vreg @ 2.8 V Ireg - 7.7 10 mA Band Select Low Band Enable Voltage High Band Enable Voltage VBS 2.2 0 2.8 - 0.3 Current for VBS = 2.8 V IBS - 0.76 1.0 mA Max Unit V Table 4. Electrical Characteristics (Peak measurement at 25% duty cycle, 4.6 ms period, TA = 25°C, unless otherwise noted.) Characteristic Symbol Min Typ GSM 900 Section(Pin = -1.0 dBm, VGSM1,2,3 = 3.5 V pulsed, VdB = 3.5 V, VREG = VBS= 2.8 V, Vramp = 1.8 V pulsed) Frequency Range BW 880 - 915 MHz Output Power Pout 34.2 35.2 - dBm Power Added Efficiency PAE 48 53 - % Output Power @ Low Voltage (VGSM1,2,3 = 2.8 V pulsed, VdB = 2.8 V) Pout 32.5 33.4 - dBm Power Added Efficiency @ Low Voltage (VGSM1,2,3 = 2.8 V pulsed, VdB = 2.8 V) PAE 48 54 - % - -37 -60 -33 -45 Harmonic Output 2fo ≥3fo MOTOROLA dBc MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com 3 Electrical Specifications Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Table 4. Electrical Characteristics (Continued) (Peak measurement at 25% duty cycle, 4.6 ms period, TA = 25°C, unless otherwise noted.) Characteristic Symbol ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... Second Harmonic Leakage at DCS Output (Crosstalk isolation) Min Typ Max Unit - -28 -15 dBm Input Return Loss |S11| - 10 - dB Output Power Isolation (Vramp = 0 V, VGSM1,2,3 = 0 V) Poff - -45 -40 dBm Noise Power in Rx Band @ Pin = -1.0 dBm (100 kHz measurement bandwidth) @ fo + 10 MHz (fo = 915 MHz) @ fo + 20 MHz (fo = 915 MHz) NP Noise Power in Rx Band @ Pin = 6.0 dBm (100 kHz measurement bandwidth) @ fo + 10 MHz (fo = 915 MHz) @ fo + 20 MHz (fo = 915 MHz) NP Stability-Spurious Output (Pout = 5.0 to 35 dBm, Load VSWR = 6:1 all Phase Angles, Adjust Vramp for specified power) dBm - Pspur Load Mismatch Stress (Pout = 5.0 to 35 dBm, Load VSWR = 10:1 all phase angles, 5 seconds, Adjust Vramp for specified power) -80 -81 dBm - -84 -86 -77 -81 - - -60 dBc No Degradation in Output Power Before and After Test DCS Section(Pin = 2.0 dBm, VDCS1,2,3 = 3.5 V pulsed, VdB = 3.5 V, VREG = 2.8 V, Vramp = 1.8 V pulsed, VBS = 0 V) Frequency Range BW 1710 - 1785 MHz Output Power Pout 32.5 33.8 - dBm Power Added Efficiency PAE 38 44 - % Output Power @ Low Voltage (VDCS1,2,3 = 2.8 V pulsed, VdB= 2.8 V) Pout 31 32 - dBm Power Added Efficiency @ Low Voltage (VDCS1,2,3 = 2.8 V pulsed, VdB= 2.8 V) PAE 38 45 - % - -65 -50 -45 -45 dBc Harmonic Output 2fo ≥3fo 4 Input Return Loss |S11| - 9.0 - dB Output Power Isolation (Vramp = 0 V, VDCS1,2,3 = 0 V) Poff - -40 -35 dBm Noise Power in Rx Band @ Pin = 2.0 dBm @ fo + 20 MHz (fo = 1785 MHz) (100 kHz measurement bandwidth) NP - -78 -75 dBm Stability-Spurious Output (Pout = 0 to 33 dBm, Load VSWR = 6:1 all Phase Angles, Adjust Vramp for specified power) Pspur - - -60 dBc MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com MOTOROLA Freescale Semiconductor, Inc.Electrical Specifications ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Table 4. Electrical Characteristics (Continued) (Peak measurement at 25% duty cycle, 4.6 ms period, TA = 25°C, unless otherwise noted.) Characteristic Symbol Load Mismatch Stress (Pout = 0 to 33 dBm, Load VSWR = 10:1 all phase angles, 5 seconds, Adjust Vramp for specified power) Min Typ Max Unit No Degradation in Output Power Before and After Test ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... PCS Section(Pin = 3.0 dBm, VDCS1,2,3 = 3.5 V pulsed, VdB = 3.5 V, VREG = 2.8 V, Vramp = 1.8 V pulsed, VBS = 0 V) Frequency Range BW 1850 - 1910 MHz Output Power Pout 32.5 34 - dBm Power Added Efficiency PAE 37 43 - % Output Power @ Low Voltage (VDCS1,2,3 = 2.8 V pulsed, VdB= 2.8 V) Pout 31 32 - dBm Power Added Efficiency @ Low Voltage (VDCS1,2,3 = 2.8 V pulsed, VdB= 2.8 V) PAE 37 43 - % - -65 -50 -45 -45 dBc Harmonic Output 2fo ≥3fo Input Return Loss |S11| - 5.0 - dB Output Power Isolation (Vramp = 0 V, VDCS1,2,3 = 0 V) Poff - -35 -32 dBm Noise Power in Rx Band @ Pin = 3.0 dBm @ fo + 20 MHz (fo = 1910 MHz) (100 kHz measurement bandwidth) NP - -78 -75 dBm Stability-Spurious Output (Pout = 0 to 33 dBm, Load VSWR = 6:1 all Phase Angles, Adjust Vramp for specified power) Pspur - - -60 dBc Load Mismatch Stress (Pout = 0 to 33 dBm, Load VSWR = 10:1 all phase angles, 5 seconds, Adjust Vramp for specified power) MOTOROLA No Degradation in Output Power Before and After Test MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com 5 Freescale Semiconductor, Inc. Typical Performance Characteristics ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 2 Typical Performance Characteristics 2.1 GSM 60 PAE, POWER ADDED EFFICIENCY (%) 37 36 TA = -35°C 35 25°C 34 85°C VGSM1,2,3 = 3.5 V VdB = 3.5 V 33 Vapc = 2.2 V 32 880 887 894 901 908 TA = -35°C 55 25°C 50 85°C VGSM1,2,3 = 3.5 V 45 VdB = 3.5 V Vapc = 2.2 V 40 880 915 887 Figure 2. Output Power versus Frequency 901 908 915 Figure 3. Power Added Efficiency versus Frequency -20 38 H2, SECOND HARMONIC (dBc) VGSM1,2,3 = 3.5 V -22 VdB = 3.5 V -24 Vapc = 2.2 V -26 -28 TA = 85°C -35°C -30 -32 25°C -34 880 887 894 901 908 f, FREQUENCY (MHz) Figure 4. Crosstalk versus Frequency 6 894 f, FREQUENCY (MHz) f, FREQUENCY (MHz) CROSSTALK (dBm) ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... Pout, OUTPUT POWER (dBm) 38 915 37 TA = 85°C 36 25°C VGSM1,2,3 = 3.5 V VdB = 3.5 V Vapc = 2.2 V 35 34 -35°C 33 32 880 887 894 901 908 915 f, FREQUENCY (MHz) Figure 5. Second Harmonic Output versus Frequency MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com MOTOROLA Freescale Semiconductor, Inc. Typical Performance Characteristics ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 H3, THIRD HARMONIC (dBc) 70 69 TA = -35°C 68 25°C VGSM1,2,3 = 3.5 V VdB = 3.5 V 67 66 Vapc = 2.2 V 65 64 85°C 63 880 887 894 901 908 915 Figure 6. Third Harmonic Output versus Frequency 2.2 DCS 48 PAE, POWER ADDED EFFICIENCY (%) Pout, OUTPUT POWER (dBm) 34.4 TA = -35°C 34.2 34 33.8 25°C VGSM1,2,3 = 3.5 V 33.6 VdB = 3.5 V 33.4 Vapc = 2.2 V 33.2 85°C 33 1710 1735 1760 47 TA = -35°C 46 45 25°C 44 VGSM1,2,3 = 3.5 V 43 VdB = 3.5 V Vapc = 2.2 V 42 85°C 41 40 1710 1785 1735 f, FREQUENCY (MHz) 1760 1785 f, FREQUENCY (MHz) Figure 7. Output Power versus Frequency Figure 8. Power Added Efficiency versus Frequency 72 60 71 59 VGSM1,2,3 = 3.5 V H3, THIRD HARMONIC (dBc) H2, SECOND HARMONIC (dBc) ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... f, FREQUENCY (MHz) 70 69 TA = 85°C 68 VGSM1,2,3 = 3.5 V VdB = 3.5 V 67 25°C 66 65 1710 Vapc = 2.2 V 35°C 1735 1760 f, FREQUENCY (MHz) Figure 9. Second Harmonic Output versus Frequency MOTOROLA 1785 58 VdB = 3.5 V TA = -35°C Vapc = 2.2 V 25°C 57 85°C 56 55 54 1710 1735 1760 1785 f, FREQUENCY (MHz) Figure 10. Third Harmonic Output versus Frequency MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com 7 Freescale Semiconductor, Inc. Typical Performance Characteristics ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 2.3 PCS 46 Pout, OUTPUT POWER (dBm) 34.6 PAE, POWER ADDED EFFICIENCY (%) 34.8 TA = -35°C 34.4 34.2 25°C 34 VGSM1,2,3 = 3.5 V 33.8 VdB = 3.5 V 33.6 Vapc = 2.2 V 33.4 85°C 33.2 33 1850 1880 1865 1895 TA = -35°C 44 25°C 42 40 85°C VGSM1,2,3 = 3.5 V 38 VdB = 3.5 V Vapc = 2.2 V 36 1850 1910 1865 1895 1910 Figure 12. Power Added Efficiency versus Frequency 59 70 TA = 85°C 58 68 H3, THIRD HARMONIC (dBc) 69 25°C -35°C 67 66 VGSM1,2,3 = 3.5 V 65 VdB = 3.5 V Vapc = 2.2 V 64 1850 1865 1880 1895 f, FREQUENCY (MHz) Figure 13. Second Harmonic Output versus Frequency 8 1880 f, FREQUENCY (MHz) Figure 11. Output Power versus Frequency H2, SECOND HARMONIC (dBc) ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... f, FREQUENCY (MHz) 57 56 54 25°C 53 52 51 50 1910 TA = -35°C 55 49 1850 VGSM1,2,3 = 3.5 V VdB = 3.5 V 85°C Vapc = 2.2 V 1865 1880 1895 1910 f, FREQUENCY (MHz) Figure 14. Third Harmonic Output versus Frequency MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com MOTOROLA Freescale Semiconductor, Inc. Contact Descriptions and Connections ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 3 Contact Descriptions and Connections Table 5. Contact Function Description ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... Pin Symbol Description 1 Vreg Regulated dc voltage for bias circuit 2 VdB DC supply voltage for active bias circuits connected to the battery 3 DCS/PCS Out DCS/PCS RF output 4 VDCS3 DCS/PCS DC supply voltage for 3rd stage 5 VDCS2 DCS/PCS DC supply voltage for 2nd stage 6 VDCS1 DCS/PCS DC supply voltage for 1st stage 7 Vapc Power control for both line-ups (Vapc = 0 V, Pout = Poff, Vapc = 1.8 V, Pout = Pmax) 8 DCS/PCS In DCS/PCS RF input 9 GSM In GSM RF input 10 VGSM1 GSM DC supply voltage for 1st stage 11 VGSM2 GSM DC supply voltage for 2nd stage 12 VGSM3 GSM DC supply voltage for 3rd stage 13 GSM Out GSM RF output 14 VBS Band selection between GSM and DCS/PCS Pin 1 Pad Corner Vreg VdB DCS/PCS Out VBS VDCS3 VDCS2 VDCS1 GSM Out Ground Plane (0.60) Vramp DCS/PCS In VGSM3 VGSM2 VGSM1 GSM In (0.95) NOTE: For optimum performance VGSM1 and VGSM2, as well as VDCS1 and VDCS2, must be strapped together on the application demobard. Figure 15. Contact Connections (Bottom View) MOTOROLA MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com 9 Application Information Freescale Semiconductor, Inc. 4 Application Information ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 4.1 Power Control Considerations The MMM5063 is designed for open loop (drain control) applications. A PMOS FET is used to switch the MMM5063 drain and vary the supply voltage from 0 to the battery voltage setting (Vbat). The simplified concept schematic (see Figure 22) describes the application circuit used to control the device through the drain voltage. A drain control provides a linear transfer function which is repeatable versus control voltage (see Figure 16). 4.0 Pout, OUTPUT POWER (W) ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 2.0 0 4.0 6.0 8.0 10 12 14 VD2, DRAIN VOLTAGE SQUARED (V2) Figure 16. Output Power versus Drain Voltage 4.2 GSM Second Harmonic (H2) Trap Circuitry When transmitting in GSM saturated mode, the second harmonic is naturally present at the RF output of the PA and reaches the antenna after additional filtering in the front-end. ETSI specifies that harmonic level cannot exceed -36 dBm. In order to improve H2 rejection in low Band (GSM), an H2 trap has been developed. The topology is based on a Low Pass π Cell Filter (see Figure 17) where the first shunt capacitor is actually part of the PA output match. GSM Out 8.2 pF 0402 Murata 460 pH 7.5 nH Coilcraft 0603 Switchplexer 2.2 pF 0402 Murata 460 pH Figure 17. Low Pass Filter This circuit reduces H2 level by 7 to 8 dB with low in-band insertion losses (mainly due to the series inductor). Moreover, this structure can be used to match Power amplifier module output to the switchplexer. 10 MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com MOTOROLA Freescale Semiconductor, Inc.Application Information ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 4.3 Application Schematics and Printed Circuit Boards Battery PMOS [Note 1] Vramp CE ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... Vreg VAPC VBS GSM In DCS/PCS In Vd VdB MMM5063 GSM Out DCS/PCS Out [Note 2] NOTES: 1. Op/Amp is either external (with an enable pin CE) or in an ASIC. 2. The MMM5063 requires 4 to 6 RF/LF decoupling capacitors (not shown). Figure 18. Open Loop Control Application Schematic Figure 18 represents the complete Power Amplifier implementation including the MMM5063 Amplifier Module and the Control Circuitry. This functionality is realized with two separate printed circuit boards; the PA Evaluation Circuit with schematic shown in Figure 21 and PCB Layout shown in Figure 23, and the Power Amplifier Control Loop with schematic shown in Figure 22 and PCB Layout shown in Figure 24. The PA Evaluation Circuit is straightfoward and, due to the MMM5063’s high level of integration, requires only a few passive components around the package. These components are mainly de-coupling capacitors. The Power Amplifier Control Loop is based on an operational amplifier driving a PMOS transistor. The PMOS device functions as a linear drain voltage regulator controlled by Vrampwith a typical gain of 2 which is set through the resistive divider R4 and R5 as shown in Figure 22. To control output power through the drain, Vapc must be indexed to the drain voltage to prevent the PA Section from drawing excessive current especially at low output power. Nevertheless, Vapc should stay above 0.8 V to provide sufficient gain for the line-up. Figure 19 describes the application circuit used to control Vapc through the drain voltage. It uses Vreg to pre-position Vapc at 0.9 V and add a voltage which is dependent on the drain Voltage. Vreg = 2.8 V R8 = 1.0 kΩ 0 V < Vdrain < VBAT R7 = 560 Ω Vapc RVAPC = 700 Ω Internal to the die Figure 19. MOTOROLA MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com 11 Application Information Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 R8 and RVapc set Vapc at 0.9 V while R7 sets the Vapc slope. Vapc versus Vdrain is shown in the Figure 20. 2.4 2.2 2.0 Vapc (V) 1.8 1.6 1.4 1.2 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... 1.0 0.8 0 0.5 1.0 1.5 2.0 Vdrain (V) 2.5 3.0 3.5 4.0 Figure 20. Vapc versus Vdrain It is possible that the Power Control DAC output voltage can be in the 200 mV to 2.0 V range. This raises a concern for the MMM5063 ramp control voltage (Vramp) which must start at 0 V to get enough output power dynamic range. To overcome this limitation, a resistor (R6 in Figure 22) is used to set an additional offset (200 mV with R6 = 39 kΩ). This residual voltage is then subtracted the DAC output voltage through the differential Operational Amplifier. 12 MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com MOTOROLA Freescale Semiconductor, Inc.Application Information ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 C9 10 nF C1 N/C C2 330 pF C6 N/C C13 N/C C15 10 nF VDCS2 C8 22 pF VDCS3 VDCS1 DCS/ PCS In Vapc DCS/PCS In GSM In C7 22 pF DCS/PCS Out C4 N/C VGSM1 C14 10 nF C5 220 pF VBS C12 22 pF GSM In Vreg C16 6.8 pF VGSM3 DCS/PCS Out C17 3.9 pF VdB GSM Out VGSM2 C3 N/C C18 100 pF ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... C11 1.0 nF C10 47 pF NOTE: N/C = No Connect, Do not mount. GSM Out Figure 21. PA Evaluation Circuit MOTOROLA MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com 13 Application Information Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 C6 47 nF C5 10 nF NOTE: N/C = No Connect, Do not mount. C1 68 µF R8 1.0 k R10 N/C R3 12 k C3 15 pF R2 150 Ω ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... R7 560 Ω C2 330 pF C4 330 pF C18 10 nF R6 39 k R5 5.6 k R4 5.6 k R11 150 Ω C12 10 nF Figure 22. Power Amplifier Control Loop 14 MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com MOTOROLA Freescale Semiconductor, Inc.Application Information ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Figure 23. PA Evaluation Circuit PCB Table 6. PA Evaluation Circuit PCB Bill of Materials Reference Value Part Number Manufacturer C1, C3, C4, C6, C13 N/C - Do not mount C2 330 pF GRM36COG330J50 Murata C5 220 pF GRM36X7R221K50 Murata C7, C8, C12 22 pF GRM36COG220J50 Murata C9, C14, C15 10 nF GRM36X7R103K25 Murata C10 47 pF GRM36COG470J50 Murata C11 1.0 nF GRM36X7R102K25 Murata C16 6.8 pF GRM36COG6R8J50 Murata C17 3.9 pF GRM36COG3R9J50 Murata C18 100 nF GRM36X7R104K25 Murata J2, J3, J4, J5 50 Ω 142-0711-821 Johnson MOTOROLA MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com 15 Application Information Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Figure 24. Power Amplifier Control Loop PCB Table 7. Power Amplifier Control Loop PCB Bill of Materials Reference Value Part Number Manufacturer C1 68 µF 293D685X9020C Sprague C2 330 pF GRM36COG330J50 Murata C3 15 pF GRM36COG150J50 Murata C4 330 pF GRM36x7R331K50 Murata C5, C12, C18 10 nF GRM36X7R103K25 Murata C6 47 nF GRM36X7R473K10 Murata J1, J2, J3 DC connector Q1 Power MOSFET NTHS5445T ON Semiconductor Q2 N/C - Do not mount R1, R8 1.0 k CRG0402 5% 1 kO NEOHM R2 150 Ω CRG0402 5% 150 O NEOHM R3 12 k CRG0402 5% 12 kO NEOHM R4, R5 5.6 k CRG0402 5% 5.6 kO NEOHM R6, R10 N/C - Do not mount R7 560 Ω CRG0402 5% 560 O NEOHM R11 100 Ω CRG0402 5% 100 O NEOHM U1 CMOS Op Amp AD8591 Analog Devices 16 MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com MOTOROLA Freescale Semiconductor, Inc. Packaging Information 5 Packaging Information ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Shipping, Packaging and Marking Information Tape Width: 16.0 mm Tape Pitch 12 mm (part to part) Reel Diameter: 330 mm (13 in) Component Orientation: Parts are to be orientated with pin 1 side closest to the tape's round sprocket holes on the tape's trailing edge. Dry Pack: This device meets Moisture Sensitiviy Level (MSL) 3. Parts will be shipped in Dry Pack. Parts must be stored at 30°C and 60% relative humidity with time out of dry pack not to exceed 168 hours. MMM5063 LLLLLL WW AWLYYWW Marking (Top View) 1) 40°C Dry Out: Bake devices at 40°C ≤ TA ≤ 45°C, 5% Relative Humidity for at least 192 hours. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... In the event that parts are not handled or stored within these limits, one of the following dry out procedures must be completed prior to reflow: 2) Room Temperature Dry Out: Store devices at less than 20% Relative Humidity for at least 500 hours. Marking: 1st line: Motorola Logo 2nd Line: Partnumber coded on 7 characters 3rd Line: Wafer lot number (coded on 6 characters) followed by wafer number (coded on 3 digits) 4th Line: Assy site code (on 1 or 2 characters), followed by Wafer Lot Number (coded on 1 or 2 characters), followed by Year (on 2 digits) and Workweek (on 2 digits). Tape & Reel Orientation (Top View) Figure 25. Packaging Information MOTOROLA MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com 17 Freescale Semiconductor, Inc. Packaging Information ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 B 7 A 0.1 1.01 ± 0.1 0.7 ± 0.05 0.1 A 2.95±0.05 2.45±0.05 2.55 2.2 0.3 0.7 2.24 3.15 0.5±0.05 1±0.05 3.15 2.9 2.52 0.8±0.05 1.77 1.02 0.97 0.07 0 3±0.05 9X 0.5±0.05 SQ 2.37±0.05 2.215 2.4 2.4 0.5±0.05 0.8±0.05 0.5±0.05 3.15 2.4 0 1.65 1.2±0.05 1.03 0.5±0.05 2.8 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... 7 PIN ONE IDENT NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. BOTTOM VIEW 0.1 L A B C APPLIES TO ALL PAD LOCATIONS. Figure 26. Outline Dimensions for 7x7 mm Module (Case 1383-02, Issue A) 18 MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com MOTOROLA Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... NOTES MOTOROLA MMM5063 Advance Information For More Information On This Product, Go to: www.freescale.com 19 Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc... ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 HOW TO REACH US: Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to USA/EUROPE/LOCATIONS NOT LISTED: design or fabricate any integrated circuits or integrated circuits based on the information in this Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217 1-303-675-2140 or 1-800-441-2447 document. JAPAN: for any particular purpose, nor does Motorola assume any liability arising out of the application or Motorola reserves the right to make changes without further notice to any products herein. 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