ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT
General Description
Applications
The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the
next generation ignition IGBTs that offer outstanding SCIS
capability in the space saving D-Pak (TO-252), as well as the
industry standard D²-Pak (TO-263) and TO-220 plastic packages.
This device is intended for use in automotive ignition circuits,
specifically as a coil driver. Internal diodes provide voltage clamping
without the need for external components.
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
EcoSPARK™ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Features
• Space saving D - Pak package available
• SCIS Energy = 200mJ at TJ = 25oC
• Logic Level Gate Drive
Formerly Developmental Type 49444
Package
Symbol
COLLECTOR
JEDEC TO-252AA
D-Pak
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
E
C
G
R1
GATE
G
G
E
R2
E
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Ratings
430
Units
V
BVECS
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
24
V
ESCIS25
At Starting TJ = 25°C, ISCIS = 11.5A, L = 3.0mHy
200
mJ
ESCIS150
At Starting TJ = 150°C, ISCIS = 8.9A, L = 3.0mHy
120
mJ
IC25
Collector Current Continuous, At TC = 25°C, See Fig 9
10
A
IC110
Collector Current Continuous, At TC = 110°C, See Fig 9
10
A
VGEM
Gate to Emitter Voltage Continuous
±10
V
PD
Power Dissipation Total TC = 25°C
130
W
Power Dissipation Derating TC > 25°C
0.87
W/°C
Operating Junction Temperature Range
-40 to 175
°C
Storage Junction Temperature Range
-40 to 175
°C
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
300
°C
Tpkg
Max Lead Temp for Soldering (Package Body for 10s)
260
°C
ESD
Electrostatic Discharge Voltage at 100pF, 1500Ω
4
kV
TJ
TSTG
TL
©2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
October 2004
Device Marking
V2040D
Device
ISL9V2040D3ST
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500
V2040S
ISL9V2040S3ST
TO-263AB
330mm
24mm
800
V2040P
ISL9V2040P3
TO-220AB
Tube
N/A
50
V2040D
ISL9V2040D3S
TO-252AA
Tube
N/A
75
V2040S
ISL9V2040S3S
TO-263AB
Tube
N/A
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BVCER
Collector to Emitter Breakdown Voltage
IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
TJ = -40 to 150°C
370
400
430
V
BVCES
Collector to Emitter Breakdown Voltage
IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150°C
390
420
450
V
BVECS
Emitter to Collector Breakdown Voltage
IC = -75mA, VGE = 0V,
TC = 25°C
30
-
-
V
BVGES
Gate to Emitter Breakdown Voltage
IGES = ± 2mA
Collector to Emitter Leakage Current
VCER = 250V,
RG = 1KΩ,
See Fig. 11
ICER
IECS
Emitter to Collector Leakage Current
R1
Series Gate Resistance
R2
Gate to Emitter Resistance
±12
±14
-
V
TC = 25°C
-
-
25
µA
TC = 150°C
-
-
1
mA
VEC = 24V, See TC = 25°C
Fig. 11
TC = 150°C
-
-
1
mA
-
-
40
mA
-
70
-
Ω
10K
-
26K
Ω
On State Characteristics
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 6A,
VGE = 4V
TC = 25°C,
See Fig. 3
-
1.45
1.9
V
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 10A,
VGE = 4.5V
TC = 150°C
See Fig. 4
-
1.95
2.3
V
-
12
-
nC
TC = 25°C
1.3
-
2.2
V
TC = 150°C
0.75
-
1.8
V
-
3.4
-
V
Dynamic Characteristics
QG(ON)
Gate Charge
IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14
VGE(TH)
Gate to Emitter Threshold Voltage
IC = 1.0mA,
VCE = VGE,
See Fig. 10
VGEP
Gate to Emitter Plateau Voltage
IC = 10A, VCE = 12V
Switching Characteristics
td(ON)R
triseR
td(OFF)L
tfL
SCIS
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching
VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1KΩ
TJ = 25°C
-
0.61
-
µs
-
2.17
-
µs
VCE = 300V, L = 500µHy,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
-
3.64
-
µs
-
2.36
-
µs
TJ = 25°C, L = 3.0mHy,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
-
-
200
mJ
TO-252, TO-263, TO-220
-
-
1.15
°C/W
Thermal Characteristics
RθJC
Thermal Resistance Junction-Case
©2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
Package Marking and Ordering Information
20
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
20
RG = 1KΩ, VGE = 5V,Vdd = 14V
18
16
14
TJ = 25°C
12
10
TJ = 150°C
8
6
4
2
SCIS Curves valid for Vclamp Voltages of <430V
0
0
20
40
60
80
100
120
140
160
180
16
14
TJ = 25°C
12
10
8
TJ = 150°C
6
4
2
0
200
RG = 1KΩ, VGE = 5V,Vdd = 14V
18
SCIS Curves valid for Vclamp Voltages of <430V
0
2
4
tCLP, TIME IN CLAMP (µS)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE = 6A
VGE = 3.7V
VGE = 4.0V
1.45
1.40
VGE = 4.5V
1.35
VGE = 5.0V
1.30
VGE = 8.0V
1.25
-75
-25
25
75
125
2.4
ICE = 10A
VGE = 4.0V
2.0
1.8
VGE = 4.5V
1.6
VGE = 8.0V
1.4
175
VGE = 3.7V
2.2
-75
TJ, JUNCTION TEMPERATURE (°C)
25
75
125
175
20
Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
-25
VGE = 5.0V
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
15
10
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
1.60
1.50
8
L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
1.55
6
VGE = 4.0V
VGE = 3.7V
10
5
TJ = - 40°C
20
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
15
VGE = 4.0V
VGE = 3.7V
10
5
TJ = 25°C
0
0
0
1.0
2.0
3.0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
©2004 Fairchild Semiconductor Corporation
0
1.0
2.0
3.0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
vs Collector Current
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
Typical Performance Curves
30
VGE = 8.0V
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
VGE = 5.0V
VGE = 4.5V
15
VGE = 4.0V
VGE = 3.7V
10
5
TJ = 175°C
0
0
1.0
2.0
3.0
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
25
20
15
10
TJ = 25°C
5
TJ = -40°C
0
4.0
TJ = 150°C
1.0
2.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
3.0
4.0
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
Figure 8. Transfer Characteristics
2.4
15.0
VCE = VGE
VTH, THRESHOLD VOLTAGE (V)
ICE, DC COLLECTOR CURRENT (A)
VGE = 4.0V
12.5
10.0
7.5
5.0
2.5
0
5.0
VGE, GATE TO EMITTER VOLTAGE (V)
ICE = 1mA
2.2
2.0
1.8
1.6
1.4
1.2
25
50
75
100
125
150
-50
175
-25
0
TC, CASE TEMPERATURE (°C)
25
50
75
100
125
150
175
TJ JUNCTION TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
10000
10
ICE = 6.5A, VGE = 5V, RG = 1KΩ
1000
Inductive tOFF
SWITCHING TIME (µS)
LEAKAGE CURRENT (µA)
VECS = 24V
100
10
VCES = 300V
8
6
Resistive tOFF
4
1
Resistive tON
VCES = 250V
0.1
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
©2004 Fairchild Semiconductor Corporation
175
2
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
Typical Performance Curves (Continued)
8
1200
IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C
VGE, GATE TO EMITTER VOLTAGE (V)
FREQUENCY = 1 MHz
C, CAPACITANCE (pF)
1000
800
CIES
600
400
CRES
200
COES
7
6
VCE = 12V
5
4
3
2
VCE = 6V
1
0
0
0
5
10
15
20
25
0
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
10
15
20
25
QG, GATE CHARGE (nC)
Figure 13. Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
415
BVCER, BREAKDOWN VOLTAGE (V)
ICER = 10mA
410
TJ = - 40°C
405
400
395
TJ = 175°C
390
TJ = 25°C
385
380
375
370
10
100
1000
2000
3000
RG, SERIES GATE RESISTANCE (kΩ)
ZthJC, NORMALIZED THERMAL RESPONSE
Figure 15. Breakdown Voltage vs Series Gate Resistance
100
0.5
0.2
t1
0.1
10-1
PD
0.05
t2
0.02
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.01
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
100
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
Typical Performance Curves (Continued)
L
VCE
R
or
L
C
PULSE
GEN
LOAD
C
RG
RG = 1KΩ
DUT
G
+
DUT
G
VCE
-
5V
E
E
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
BVCES
VCE
tP
VCE
L
IAS
VDD
VARY tP TO OBTAIN
REQUIRED PEAK IAS
+
RG
VDD
-
VGE
DUT
tP
0V
IAS
0
0.01Ω
tAV
Figure 19. Unclamped Energy Test Circuit
©2004 Fairchild Semiconductor Corporation
Figure 20. Unclamped Energy Waveforms
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
Test Circuit and Waveforms
th
JUNCTION
REV 25 April 2002
ISL9V2040D3S, ISL9V2040S3S, ISL9V2040P3
CTHERM1 th 6 1.3e -2
CTHERM2 6 5 8.8e -4
CTHERM3 5 4 8.8e -3
CTHERM4 4 3 3.9e -1
CTHERM5 3 2 3.6e -1
CTHERM6 2 tl 1.9e -1
RTHERM1
CTHERM1
6
RTHERM1 th 6 1.2e -1
RTHERM2 6 5 3.2e -1
RTHERM3 5 4 1.7e -1
RTHERM4 4 3 1.2e -1
RTHERM5 3 2 1.3e -1
RTHERM6 2 tl 2.5e -1
RTHERM2
CTHERM2
5
SABER Thermal Model
SABER thermal model
ISL9V2040D3S, ISL9V2040S3S, ISL9V2040P3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 1.3e -3
ctherm.ctherm2 6 5 = 8.8e -4
ctherm.ctherm3 5 4 = 8.8e -3
ctherm.ctherm4 4 3 = 3.9e -1
ctherm.ctherm5 3 2 = 3.6e -1
ctherm.ctherm6 2 tl = 1.9e -1
RTHERM3
CTHERM3
4
RTHERM4
CTHERM4
3
rtherm.rtherm1 th 6 = 1.2e -1
rtherm.rtherm2 6 5 = 3.2e -1
rtherm.rtherm3 5 4 = 1.7e -1
rtherm.rtherm4 4 3 = 1.2e -1
rtherm.rtherm5 3 2 = 1.3e -1
rtherm.rtherm6 2 tl = 2.5e -1
}
RTHERM5
CTHERM5
2
CTHERM6
RTHERM6
tl
©2004 Fairchild Semiconductor Corporation
CASE
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
SPICE Thermal Model
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E2CMOS™
I2C™
EnSigna™
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FACT™
ImpliedDisconnect™
FACT Quiet Series™
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LittleFET™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I13