2N4449 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N4449J) • JANTX level (2N4449JX) • JANTXV level (2N4449JV) • JANS level (2N4449JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Features • • • • Hermetically sealed TO-46 metal can Also available in chip configuration Chip geometry 0005 Reference document: MIL-PRF-19500/317 Benefits • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25°C unless otherwise specified Symbol VCEO Rating 15 Collector-Base Voltage VCBO 40 Unit Volts Volts Emitter-Base Voltage VEBO 4.5 Volts PT 0.36 2.06 RθJA 325 mW mW/°C °C/W TJ -65 to +200 °C TSTG -65 to +200 °C Power Dissipation, TA = 25°C Derate linearly above 25°C Thermal Resistance Operating Junction Temperature Storage Temperature Copyright 2002 Rev. J Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N4449 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Symbol Test Conditions Min V(BR)CEO IC = 10 mA VCB = 40 Volts VCB = 32 Volts VCB = 20 Volts, TA = 150°C VCE= 10Volts, VEB= 0.25Volts TA = 125°C VCE = 20 Volts VEB = 4.5 Volts VEB = 4 Volts 15 Collector-Base Cutoff Current ICBO1 ICBO2 ICBO3 Collector-Emitter Cutoff Current ICEX Collector-Emitter Cutoff Current ICES IEBO1 IEBO2 Emitter-Base Cutoff Current On Characteristics Typ Max Units Volts 10 0.2 30 µA 30 µA 400 10 0.25 nA µA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat1 VBEsat2 VBEsat3 VBEsat4 VBEsat5 VCEsat1 VCEsat2 VCEsat3 VCEsat4 Test Conditions IC = 10 mA, VCE = 0.35 Volts IC = 30 mA, VCE = 0.4 Volts IC = 10 mA, VCE = 1 Volts IC = 100 mA, VCE = 1 Volts IC = 10 mA, VCE = 1 Volts TA = -55°C IC = 10 mA, IB = 1 mA IC = 30 mA, IB = 3 mA IC = 100 mA, IB = 10 mA IC= 10mA, IB= 1mA,TA=+125°C IC= 10mA, IB= 1mA, TA = -55°C IC = 10 mA, IB = 1 mA IC = 30 mA, IB = 3 mA IC = 100 mA, IB = 10 mA IC= 10mA, IB= 1mA,TA=+125°C Min 40 30 40 20 20 Typ 0.70 Max 120 120 120 120 0.85 0.90 1.20 0.80 0.59 Units Volts 1.02 0.20 0.25 0.45 0.30 Volts Max Units Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Symbol |hFE| Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Storage Time ts Saturated Turn-On Time tON Saturated Turn-Off Time tOFF Copyright 2002 Rev. J Test Conditions VCE = 10 Volts, IC = 10 mA, f = 100 MHz VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz IC = 10 mA, IB1=IB2 = 10 mA IC = 10 mA, IB1= 3 mA, IB2 = 1.5 mA IC = 10 mA, IB1= 3 mA, IB2 = 1.5 mA Min Typ 5 10 4 pF 5 pF 13 ns 12 ns 18 ns Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2