SSDI 2N5153

2N5151
Silicon PNP Transistor
Data Sheet
Description
Applications
Semicoa Semiconductors offers:
• High-speed power switching
• Low power
• PNP silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5151J)
• JANTX level (2N5151JX)
• JANTXV level (2N5151JV)
• JANS level (2N5151JS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Features
• Radiation testing (total dose) upon request
•
•
•
•
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 9702
Reference document:
MIL-PRF-19500/545
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
TC = 25°C unless otherwise specified
Symbol
Rating
Collector-Emitter Voltage
VCEO
80
Collector-Base Voltage
VCBO
100
Unit
Volts
Volts
Emitter-Base Voltage
VEBO
5.5
Volts
IC
2
A
1
5.7
11.8
66.7
175
15
W
mW/°C
W
mW/°C
-65 to +200
°C
Collector Current, Continuous
O
Power Dissipation, TA = 25 C
Derate linearly above 25OC
Power Dissipation, TC = 25OC
Derate linearly above 25OC
PT
PT
Thermal Resistance
RθJA
RθJC
Operating Junction Temperature
Storage Temperature
TJ
TSTG
Copyright 2002
Rev. D
°C/W
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 1 of 2
2N5151
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Collector-Emitter Breakdown Voltage
V(BR)CEO
Test Conditions
Min
IC = 100 mA
Typ
Max
Units
Volts
80
Collector-Emitter Cutoff Current
ICES1
VCE = 60 Volts
1
µA
Collector-Emitter Cutoff Current
ICES2
VCE = 100 Volts
1
mA
Collector-Emitter Cutoff Current
ICEO
VCE = 40 Volts
50
µA
Collector-Emitter Cutoff Current
ICEX
VCE = 60 Volts, VEB = 2 Volts,
TA = 150°C
500
nA
Emitter-Base Cutoff Current
IEBO1
VEB = 4 Volts
1
µA
Emitter-Base Cutoff Current
IEBO1
VEB = 5.5 Volts
1
mA
On Characteristics
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter
Symbol
hFE1
hFE2
hFE3
hFE4
DC Current Gain
Base-Emitter Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
VBE
VBEsat1
VBEsat2
VCEsat1
VCEsat2
Test Conditions
IC = 50 mA, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
TA = -55°C
VCE = 5 Volts, IC = 2.5 mA
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
Min
20
30
20
15
Test Conditions
VCE = 5 Volts, IC = 500 mA,
f = 10 MHz
VCE = 5 Volts, IC = 100 mA,
f = 1 kHz
VCB = 10 Volts, IE = 0 mA,
f = 1 MHz
Min
Typ
Max
Units
90
1.45
1.45
2.20
0.75
1.50
Volts
Volts
Volts
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Symbol
|hFE|
hFE
COBO
Typ
Max
Units
250
pF
0.5
1.4
0.5
1.5
µs
µs
µs
µs
6
20
Switching Characteristics
Saturated Turn-On Time
Storage Time
Fall Time
Saturated Turn-Off Time
Copyright 2002
Rev. D
tON
ts
tf
tOFF
IC = 5 A, IB1= 500 mA,
IB2= -500 mA, VBEoff = 3.7 V,
RL = 6 Ω
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 2 of 2