2N5151 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed power switching • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5151J) • JANTX level (2N5151JX) • JANTXV level (2N5151JV) • JANS level (2N5151JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS Features • Radiation testing (total dose) upon request • • • • Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 9702 Reference document: MIL-PRF-19500/545 Benefits • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter TC = 25°C unless otherwise specified Symbol Rating Collector-Emitter Voltage VCEO 80 Collector-Base Voltage VCBO 100 Unit Volts Volts Emitter-Base Voltage VEBO 5.5 Volts IC 2 A 1 5.7 11.8 66.7 175 15 W mW/°C W mW/°C -65 to +200 °C Collector Current, Continuous O Power Dissipation, TA = 25 C Derate linearly above 25OC Power Dissipation, TC = 25OC Derate linearly above 25OC PT PT Thermal Resistance RθJA RθJC Operating Junction Temperature Storage Temperature TJ TSTG Copyright 2002 Rev. D °C/W Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N5151 Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Test Conditions Min IC = 100 mA Typ Max Units Volts 80 Collector-Emitter Cutoff Current ICES1 VCE = 60 Volts 1 µA Collector-Emitter Cutoff Current ICES2 VCE = 100 Volts 1 mA Collector-Emitter Cutoff Current ICEO VCE = 40 Volts 50 µA Collector-Emitter Cutoff Current ICEX VCE = 60 Volts, VEB = 2 Volts, TA = 150°C 500 nA Emitter-Base Cutoff Current IEBO1 VEB = 4 Volts 1 µA Emitter-Base Cutoff Current IEBO1 VEB = 5.5 Volts 1 mA On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 DC Current Gain Base-Emitter Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBE VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 50 mA, VCE = 5 Volts IC = 2.5 A, VCE = 5 Volts IC = 5 A, VCE = 5 Volts IC = 2.5 A, VCE = 5 Volts TA = -55°C VCE = 5 Volts, IC = 2.5 mA IC = 2.5 A, IB = 250 mA IC = 5 A, IB = 500 mA IC = 2.5 A, IB = 250 mA IC = 5 A, IB = 500 mA Min 20 30 20 15 Test Conditions VCE = 5 Volts, IC = 500 mA, f = 10 MHz VCE = 5 Volts, IC = 100 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, f = 1 MHz Min Typ Max Units 90 1.45 1.45 2.20 0.75 1.50 Volts Volts Volts Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Symbol |hFE| hFE COBO Typ Max Units 250 pF 0.5 1.4 0.5 1.5 µs µs µs µs 6 20 Switching Characteristics Saturated Turn-On Time Storage Time Fall Time Saturated Turn-Off Time Copyright 2002 Rev. D tON ts tf tOFF IC = 5 A, IB1= 500 mA, IB2= -500 mA, VBEoff = 3.7 V, RL = 6 Ω Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2