S T U/D6025NLS S amHop Microelectronics C orp. Aug 20 , 2005 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 25V ID R DS (ON) 60A ( mW) S uper high dense cell design for low R DS (ON ). T yp 6 @ V G S = 10V 7.5 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G D G S S TU S E R IE S TO-252AA(D-P AK) S G S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted) S ymbol P arameter Limit Unit Drain-S ource Voltage V DS 25 V Gate-S ource Voltage V GS 20 V ID 60 A IDM 210 A Drain-S ource Diode Forward C urrent IS 20 A Maximum P ower Dissipation @ Tc=25 C PD 50 W Operating and S torage Temperature R ange T J , T S TG -55 to 175 C Thermal R esistance, Junction-to-C ase R JC 3 C /W Thermal R esistance, Junction-to-Ambient R JA 50 C /W Drain C urrent-C ontinuous a -P ulsed @ T C =25 C THE R MAL C HAR AC TE R IS TIC S 1 S T U/D6025NLS E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 20V, V GS = 0V 1 Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) On-S tate Drain Current ID(ON) gFS OFF CHAR ACTE R IS TICS 25 V uA ON CHAR ACTE R IS TICS a Forward Transconductance 1.7 3 V V GS =10V, ID = 20A 6 8 m ohm V GS =4.5V, ID= 10A 7.5 10 m ohm V DS = 10V, V GS = 10V 1 60 A 21 S 1680 PF 480 PF 300 PF 2.8 ohm 20 ns 42 ns 58 ns 38 ns V DS =15V, ID =20A,V GS =10V 32.5 nC V DS =15V, ID =20A,V GS =4.5V 17 nC 3.2 nC nC V DS = 10V, ID = 10A DYNAMIC CHAR ACTE R IS TICS b Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS Gate resistance Rg S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =15V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z b tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 15V ID = 1 A V GS = 10V R GE N = 6 ohm V DS =15V, ID = 20A V GS =10V 2 10 S T U/D6025NLS E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Diode Forward Voltage 0.82 V GS = 0V, Is = 10A VSD 1.3 Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 75 20 V G S =4.5V -55 C V G S =4V V G S =5V I D , Drain C urrent (A) ID , Drain C urrent(A) 60 V G S =8V 45 V G S =10V 30 V G S =3V 15 0 0 15 10 5 0 0.5 1 2 1.5 2.5 3 0 V DS , Drain-to-S ource Voltage (V ) 1.4 2.1 2.8 3.5 4.2 F igure 2. Trans fer C haracteris tics 12 R DS (ON) , On-R es is tance Normalized 1.6 10 R DS (on) (m W) 0.7 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics V G S =4.5V 8 6 4 V G S =10V 2 0 25 C T j=125 C 0 15 30 45 60 1.2 1.0 0.8 V G S =4.5V I D =10A 0.6 0.4 -55 75 V G S =10V I D =20A 1.4 -25 0 25 50 75 100 125 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 42 20.0 I D =20A Is , S ource-drain current (A) 35 R DS (on) (m W) 6 V th, Normalized G ate-S ource T hres hold V oltage S T U/D6025NLS 28 21 75 C 14 125 C 7 25 C 0 0 2 4 25 C 10.0 75 C 125 C 1.0 6 8 10 0.4 V G S , G ate- S ource Voltage (V ) 0.6 0.8 1.0 1.2 1.4 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T U/D6025NLS V G S , G ate to S ource V oltage (V ) 3000 2000 C is s 1500 1000 C os s 500 C rs s 0 0 5 V DS =15V I D =20A 8 6 4 2 0 10 15 20 25 30 0 5 10 V DS , Drain-to S ource Voltage (V ) 15 20 25 30 35 40 Qg, T otal G ate C harge (nC ) F igure 10. G ate C harge F igure 9. C apacitance 600 220 Tr 10 V DS =15V ,ID=1A 1 V G S =10V 1 6 10 L im N) 1 0.5 0.1 60 100 300 600 R g, G ate R es is tance ( W) 10 (O 10 1m it 100 S 100 60 Tf T D(on) RD T D(off) I D , Drain C urrent (A) S witching T ime (ns ) 6 C , C apacitance (pF ) 2500 10 DC 10 0m s ms s 1s V G S =10V S ingle P ulse T c=25 C 1 10 30 60 V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 5 F igure 12. Maximum S afe O perating Area S T U/D6025NLS V DD ton V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL 10% INVE R TE D 10% 6 G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 t2 R θJ A (t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A (t) Duty C ycle, D=t1/t2 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 6 10 S T U/D6025NLS 7 S T U/D6025NLS 5 95 7 84 L2 9 6.00 35 05 85 0.94 4 3 0 9 36 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 8 9 7 30 3 3 41 3 3 5 1 4 BSC 398 0.064 33 REF. S T U/D6025NLS TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube " A" TO-252 Carrier Tape UNIT:㎜ PACKAGE TO-252 (16 ㎜) A0 6.80 ±0.1 B0 K0 10.3 ±0.1 2.50 ±0.1 D0 D1 E E1 E2 P0 P1 P2 T ψ2 ψ1.5 + 0.1 - 0 16.0 0.3± 1.75 0.1± 7.5 ±0.15 8.0 ±0.1 4.0 ±0.1 2.0 ±0.15 0.3 ±0.05 TO-252 Reel S UNIT:㎜ TAPE SIZE 16 ㎜ REEL SIZE M N W T H ψ 330 ψ330 ± 0.5 ψ97 ± 1.0 17.0 + 1.5 - 0 2.2 ψ13.0 + 0.5 - 0.2 9 K S 10.6 2.0 ±0.5 G R V