S TU/D303S S amHop Microelectronics C orp. N ov, 16, 2007 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S -30V S uper high dense cell design for low R DS (ON ). R DS(ON) (m W ) Max ID R ugged and reliable. 28 @ V G S = -10V -24A S urface Mount P ackage. E S D P rocteced 40 @ V G S = -4.5V D D G D G S S TU S E R IE S TO-252AA(D-P AK) S G S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter S ymbol Limit Unit Drain-S ource Voltage V DS -30 V Gate-S ource Voltage V GS 20 V Drain C urrent-C ontinuous @ Tc=25 C a -P ulsed ID -24 A IDM -96 A Drain-S ource Diode Forward C urrent IS -20 A Maximum P ower Dissipation @ Tc=25 C PD 50 W T J , T S TG -55 to 175 C Thermal R esistance, Junction-to-C ase R JC 3 C /W Thermal R esistance, Junction-to-Ambient R JA 50 C /W Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S 1 S TU/D303S E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 Condition S ymbol Min Typ C Max Unit OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA Zero Gate Voltage Drain Current IDS S V DS = -20V, V GS = 0V -1 uA Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA Gate Threshold Voltage V GS (th) V DS = V GS , ID = -250uA -1.8 -3 V Drain-S ource On-S tate R esistance R DS (ON) V GS = -10V, ID = -12A 23 28 m ohm V GS =-4.5V, ID = - 6A 34 40 m ohm -30 V ON CHAR ACTE R IS TICS a On-S tate Drain Current Forward Transconductance V DS = -10V, V GS = -10V ID(ON) gFS V DS = -10V, ID= -10A -1 -30 A 11.5 S 1130 PF 270 PF 170 PF 19 ns 31 ns 100 ns 28 ns 22 nC 10.6 nC DYNAMIC CHAR ACTE R IS TICS b Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS V DS =-15V, V GS = 0V f =1.0MH Z S WITCHING CHAR ACTE R IS TICS b Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time tD(ON) V DD = -15V ID = -1 A V GS = -10V R GE N = 6 ohm tr tD(OFF) tf Total Gate Charge (10V) Total Gate Charge (4.5V) V DS =-15V, ID = -12A V GS =-10V Qg Gate-S ource Charge Q gs 2.7 nC Gate-Drain Charge Q gd 6.4 nC 2 S TU/D303S E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Diode Forward Voltage -0.88 -1.3 V GS = 0V, Is = -10A VSD Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 25 20 20 V G S =-4.5V -I D , Drain C urrent (A) -I D , Drain C urrent(A) V G S =-4V V G S =-5V 15 V G S =-8V 10 V G S =-3V V G S =-10V 5 0 15 10 T j=125 C 5 0 0 0.5 1 2 1.5 2.5 3 0 -V DS , Drain-to-S ource Voltage (V ) 1.4 2.1 2.8 3.5 4.2 F igure 2. Trans fer C haracteris tics 60 R DS (ON) , On-R es is tance Normalized 1.6 50 R DS (on) (m Ω ) 0.7 -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics V G S =-4.5V 40 30 20 V G S =-10V 10 0 -55 C 25 C 0 5 10 15 20 1.2 1.0 0.8 V G S =-4.5V I D =-6A 0.6 0.4 -55 25 V G S =-10V I D =-12A 1.4 -25 0 25 50 75 100 125 T j( C ) -I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =-250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 120 20.0 25 C I D =-12A -Is , S ource-drain current (A) 100 R DS (on) (m Ω ) 6 V th, Normalized G ate-S ource T hres hold V oltage S TU/D303S 80 75 C 60 125 C 40 25 C 20 0 125 C 10.0 75 C 1.0 0 2 4 6 8 10 0.4 -V G S , G ate- S ource Voltage (V ) 0.6 0.8 1.0 1.2 1.4 -V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S TU/D303S -V G S , G ate to S ource V oltage (V ) 1800 C is s 1200 900 600 C os s 300 C rs s V DS =-15V I D =-12A 8 6 4 2 0 0 0 5 10 15 20 25 30 0 3 12 15 18 21 24 Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 200 220 T D(on) 10 V DS =-15V ,ID=-1A 1 L im N) (O 10 1 V G S =-10V 0.03 1 60 100 300 600 6 10 10 10 S Tf Tr RD T D(off) 100 60 it 100 -I D , Drain C urrent (A) S witching T ime (ns ) 9 6 -V DS , Drain-to S ource Voltage (V ) DC 1s 0m ms s V G S =-10V S ingle P ulse T c=25 C 0.1 1 R g, G ate R es is tance ( Ω ) 10 30 60 -V DS , Drain-S ource V oltage (V ) F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics 2 r(t),Normalized E ffective T ransient T hermal Impedance 6 C , C apacitance (pF ) 1500 10 1 D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 10 S TU/D303S A E E2 C L D1 D2 E1 1 H 2 B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 15.300 13.700 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC 6 INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.539 0.602 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC S TU/D303S TO-252 E A b2 C L3 1 D1 D E1 H 2 1 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. 7 MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. S TU/D303S TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube " A" TO-252 Carrier Tape UNIT:р PACKAGE TO-252 (16 р* A0 6.80 ²0.1 B0 K0 10.3 ²0.1 2.50 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 0.3² 1.75 0.1² 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel S UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H K S 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 8 G R V