KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking 2 8 8 1 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA IB Base Current PC P C* Collector Power Dissipation TJ TSTG 160 mA 500 1,000 mW mW Junction Temperature 150 °C Storage Temperature -55 ~ 150 °C * Mounted on Ceramic Board (250mm2 x 0.8mm) Electrical Characteristics T Symbol a= 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 10µA, IB = 0 120 V BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 5 V ICBO Collector Cut-off Current VCB = 120V, IE = 0 100 nA IEBO Emitter Cut-off Current VBE = 5V, IC = 0 100 nA hFE DC Current Gain VCE = 5V, IC = 100mA VCE (sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA VBE (on) Base-Emitter On Voltage VCE = 5V, IC = 500mA fT Current Gain Bandwidth Product VCE = 5V, IC = 100mA Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz ©2005 Fairchild Semiconductor Corporation KSC2881 Rev. B2 1 80 240 1.0 1.0 120 V V MHz 30 pF www.fairchildsemi.com KSC2881 NPN Epitaxial Silicon Transistor July 2005 Classification O Y hFE 80 ~ 160 120 ~ 240 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 2881 KSC2881 SOT-89 13” -- 4,000 KSC2881 Rev. B2 2 www.fairchildsemi.com KSC2881 NPN Epitaxial Silicon Transistor hFE Classification Figure 1. Static Characteristic 1.0 0.8 IB = 50mA VCE = 5V IB = 20mA IB = 10mA IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 2. Base-Emitter On Voltage 0.6 IB = 5mA 0.4 IB = 3mA IB = 2mA 0.2 IB = 1mA 0.0 0 4 8 12 0.8 0.6 0.4 0.2 0.0 0.0 16 Figure 3. DC Current Gain 0.6 0.8 1.0 Figure 4. Collector-Emitter Saturation Voltage 1 1000 IC = 10 IB VCE(sat) [V], SATURATION VOLTAGE VCE = 5 V hFE, DC CURRENT GAIN 0.4 VBE[mV], SATURATION VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE 100 10 0.2 0.1 0.01 1 10 100 1000 1 10 100 1000 IC [mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 5. Power Derating Figure 6. Safe Operating Area 1.6 10000 IC [mA], COLLECTOR CURRENT PC [W], POWER DISSIPATION o 1.2 2 Mounted on Ceramic Board (250 mm x 0.8 mm) 0.8 0.4 0.0 0 50 100 150 o 10 ms IC MAX. (DC) 1 ms 100 ms 100 10 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE Ta [ C], AMBIENT TEMPERATURE KSC2881 Rev. B2 1000 1 0.1 200 Ta = 25 C Single Pulse IC MAX. (Pulse) 3 www.fairchildsemi.com KSC2881 NPN Epitaxial Silicon Transistor Typical Performance Characteristics KSC2881 NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters KSC2881 Rev. B2 4 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 5 KSC2881 Rev. B2 www.fairchildsemi.com KSC2881 NPN Epitaxial Silicon Transistor TRADEMARKS