2SK3605-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Foot Print Pattern Symbol V DS VDSX *5 ID Tc=25°C Ta=25°C Ratings 150 120 ±23 ±3.1 ** ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Tc=25°C Ta=25°C ±92 ±30 23 130.9 20 5 105 2.4 ** +150 Unit V V A A A V A mJ kV/µs kV/µs W Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source Operating and storage Tch °C temperature range Tstg -55 to +150 °C ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) *1 L=363µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch < =150°C *3 IF< = BVDSS, Tch < = 150°C *4 VDS < = -ID, -di/dt=50A/µs, Vcc < = 150V *5 VGS=-30V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=150V VGS=0V VDS=120V VGS=0V VGS=±30V VDS=0V ID=8A VGS=10V Typ. 150 3.0 Tch=25°C Tch=125°C ID=8A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=8A VGS=10V 6 RGS=10 Ω V CC =75V ID=16A VGS=10V L=363µH Tch=25°C IF=16A VGS=0V Tch=25°C IF=16A VGS=0V -di/dt=100A/µs Tch=25°C 10 79 12 760 130 6 12 2.8 22 6.2 21 9 6 Max. 5.0 25 250 100 105 1140 195 9 18 4.2 33 9.3 31.5 13.5 9 23 1.10 0.13 0.59 1.65 Units V V µA nA mΩ S pF ns nC A V µs µC Thermalcharacteristics Item Symbol Test Conditions Rth(ch-c) channel to case Thermal resistance Rth(ch-a) channel to ambient Rth(ch-a) ** channel to ambient ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) Min. Typ. Max. 1.191 87.0 52.0 Units °C/W °C/W °C/W 1 2SK3605-01 FUJI POWER MOSFET Characteristics Allowable Power Dissipation PD=f(Tc) 120 5 Allowable Power Dissipation PD=f(Tc) Surface mounted on 2 1000mm ,t=1.6mm FR-4 PCB 100 2 (Drain pad area : 500mm ) 4 80 PD [W] PD [W] 3 60 2 40 1 20 0 0 25 50 75 100 125 0 150 0 25 50 Tc [°C] 400 100 150 ID=f(VDS):80µs Pulse test,Tch=25°C 60 IAS=9A 50 300 20V 10V 40 250 8V IAS=14A ID [A] EAS [mJ] 125 Typical Output Characteristics Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V 350 75 Tc [°C] 200 150 7.5V 30 7.0V IAS=23A 20 6.5V 100 10 50 6.0V VGS=5.5V 0 0 25 50 75 100 125 0 150 0 2 4 starting Tch [°C] Typical Transfer Characteristic 8 10 12 Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 100 6 VDS [V] 100 10 gfs [S] ID[A] 10 1 1 0.1 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 0.1 0.1 1 10 100 ID [A] 2 2SK3605-01 FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A,VGS=10V Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs Pulse test, Tch=25°C 300 0.30 VGS= 5.5V 0.25 6.0V 6.5V 7.0V 7.5V 250 10V 0.15 20V 0.10 RDS(on) [ m Ω ] RDS(on) [ Ω ] 8V 0.20 200 150 max. 100 typ. 50 0.05 0 0.00 0 10 20 30 -50 40 -25 0 25 50 75 100 125 150 Tch [°C] ID [A] Typical Gate Charge Characteristics Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 µ A VGS=f(Qg):ID=16A, Tch=25°C 7.0 14 6.5 6.0 12 5.5 max. 10 4.5 4.0 VGS [V] VGS(th) [V] 5.0 3.5 3.0 min. 8 6 Vcc= 75V 2.5 2.0 4 1.5 1.0 2 0.5 0 0.0 -50 -25 0 25 50 75 100 125 0 150 10 20 Tch [°C] 30 40 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C 100 10 0 Ciss 10 -1 10 -2 10 C [nF] IF [A] Coss 1 Crss 10 -3 10 -1 10 0 10 VDS [V] 1 10 2 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VSD [V] 3 2SK3605-01 FUJI POWER MOSFET Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V, VGS=10V, RG=10Ω 3 10 100 Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB Rth(ch-a) [°C/W] 90 tf 2 t [ns] 10 td(off) 80 70 60 50 40 td(on) 1 10 30 20 tr 10 0 10 -1 10 10 0 10 1 0 2 0 10 Avalanche Current I AV [A] 10 2 10 1 10 0 1000 2000 3000 4000 5000 2 ID [A] Drain Pad Area [mm ] Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V Single Pulse 10 -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [°C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4