FUJI 2SK3605-01

2SK3605-01
200304
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings (mm)
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-repetitive Avalanche current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Foot Print Pattern
Symbol
V DS
VDSX *5
ID Tc=25°C
Ta=25°C
Ratings
150
120
±23
±3.1 **
ID(puls]
VGS
IAS *2
EAS *1
dVDS/dt *4
dV/dt *3
PD Tc=25°C
Ta=25°C
±92
±30
23
130.9
20
5
105
2.4 **
+150
Unit
V
V
A
A
A
V
A
mJ
kV/µs
kV/µs
W
Equivalent circuit schematic
D : Drain
G : Gate
S1 : Source
S2 : Source
Operating and storage
Tch
°C
temperature range
Tstg
-55 to +150
°C
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
*1 L=363µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch <
=150°C
*3 IF<
= BVDSS, Tch <
= 150°C *4 VDS <
= -ID, -di/dt=50A/µs, Vcc <
= 150V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Symbol
V(BR)DSS
VGS(th)
Zero gate voltage drain current
IDSS
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
V SD
t rr
Qrr
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Min.
Test Conditions
ID= 250µA
VGS=0V
ID= 250µA
VDS=VGS
VDS=150V VGS=0V
VDS=120V VGS=0V
VGS=±30V VDS=0V
ID=8A VGS=10V
Typ.
150
3.0
Tch=25°C
Tch=125°C
ID=8A VDS=25V
VDS =75V
VGS=0V
f=1MHz
VCC=48V ID=8A
VGS=10V
6
RGS=10 Ω
V CC =75V
ID=16A
VGS=10V
L=363µH Tch=25°C
IF=16A VGS=0V Tch=25°C
IF=16A VGS=0V
-di/dt=100A/µs Tch=25°C
10
79
12
760
130
6
12
2.8
22
6.2
21
9
6
Max.
5.0
25
250
100
105
1140
195
9
18
4.2
33
9.3
31.5
13.5
9
23
1.10
0.13
0.59
1.65
Units
V
V
µA
nA
mΩ
S
pF
ns
nC
A
V
µs
µC
Thermalcharacteristics
Item
Symbol
Test Conditions
Rth(ch-c)
channel to case
Thermal resistance
Rth(ch-a)
channel to ambient
Rth(ch-a) **
channel to ambient
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
Min.
Typ.
Max.
1.191
87.0
52.0
Units
°C/W
°C/W
°C/W
1
2SK3605-01
FUJI POWER MOSFET
Characteristics
Allowable Power Dissipation
PD=f(Tc)
120
5
Allowable Power Dissipation
PD=f(Tc)
Surface mounted on
2
1000mm ,t=1.6mm FR-4 PCB
100
2
(Drain pad area : 500mm )
4
80
PD [W]
PD [W]
3
60
2
40
1
20
0
0
25
50
75
100
125
0
150
0
25
50
Tc [°C]
400
100
150
ID=f(VDS):80µs Pulse test,Tch=25°C
60
IAS=9A
50
300
20V
10V
40
250
8V
IAS=14A
ID [A]
EAS [mJ]
125
Typical Output Characteristics
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=48V
350
75
Tc [°C]
200
150
7.5V
30
7.0V
IAS=23A
20
6.5V
100
10
50
6.0V
VGS=5.5V
0
0
25
50
75
100
125
0
150
0
2
4
starting Tch [°C]
Typical Transfer Characteristic
8
10
12
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
6
VDS [V]
100
10
gfs [S]
ID[A]
10
1
1
0.1
0
1
2
3
4
5
VGS[V]
6
7
8
9
10
0.1
0.1
1
10
100
ID [A]
2
2SK3605-01
FUJI POWER MOSFET
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8A,VGS=10V
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
300
0.30
VGS=
5.5V
0.25
6.0V
6.5V
7.0V
7.5V
250
10V
0.15
20V
0.10
RDS(on) [ m Ω ]
RDS(on) [ Ω ]
8V
0.20
200
150
max.
100
typ.
50
0.05
0
0.00
0
10
20
30
-50
40
-25
0
25
50
75
100
125
150
Tch [°C]
ID [A]
Typical Gate Charge Characteristics
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250 µ A
VGS=f(Qg):ID=16A, Tch=25°C
7.0
14
6.5
6.0
12
5.5
max.
10
4.5
4.0
VGS [V]
VGS(th) [V]
5.0
3.5
3.0
min.
8
6
Vcc= 75V
2.5
2.0
4
1.5
1.0
2
0.5
0
0.0
-50
-25
0
25
50
75
100
125
0
150
10
20
Tch [°C]
30
40
Qg [nC]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
10
0
Ciss
10
-1
10
-2
10
C [nF]
IF [A]
Coss
1
Crss
10
-3
10
-1
10
0
10
VDS [V]
1
10
2
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VSD [V]
3
2SK3605-01
FUJI POWER MOSFET
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
3
10
100
Thermal Resistance vs. Drain Pad area
t=1.6mm FR-4 PCB
Rth(ch-a) [°C/W]
90
tf
2
t [ns]
10
td(off)
80
70
60
50
40
td(on)
1
10
30
20
tr
10
0
10
-1
10
10
0
10
1
0
2
0
10
Avalanche Current I AV [A]
10
2
10
1
10
0
1000
2000
3000
4000
5000
2
ID [A]
Drain Pad Area [mm ]
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=48V
Single Pulse
10
-1
-2
10
-8
10
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
Zth(ch-c) [°C/W]
tAV [sec]
10
1
10
0
10
-1
10
-2
10
-3
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
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