MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor http://onsemi.com Features • Pb−Free Package is Available 0.7 AMPS 30 VOLTS − V(BR)CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO 30 V Collector−Base Voltage VCBO 40 V Emitter−Base Voltage VEBO 5.0 V Collector Current IC 700 mA Base Current IB 350 mA Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance, Junction−to−Ambient (Note 1) PD PD 342 178 mW mW RqJA 366 °C/W Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance, Junction−to−Ambient (Note 2) PD PD 665 346 mW mW RqJA 188 °C/W Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C COLLECTOR PINS 2, 5 BASE PIN 6 EMITTER PIN 3 TSOP−6/SC−74 CASE 318F STYLE 2 6 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Minimum FR−4 or G−10 PCB, Operating to Steady State. 2. Mounted onto a 2″ square FR−4 Board (1″ sq 2 oz Cu 0.06″ thick single sided), Operating to Steady State. MARKING DIAGRAM DC M G G 1 DC = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMBT2132T3 TSOP−6 10,000/Tape & Reel TSOP−6 (Pb−Free) 10,000/Tape & Reel MMBT2132T3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 1 1 Publication Order Number: MMBT2132T3/D MMBT2132T3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Base Breakdown Voltage (IC = 100 mAdc) V(BR)CBO 40 − − Vdc Collector −Emitter Breakdown Voltage (IC = 10 mAdc) V(BR)CEO 30 − − Vdc Emitter−Base Breakdown Voltage (IE = 100 mAdc) V(BR)EBO 5.0 − − Vdc (VCB = 25 Vdc, IE = 0 Adc) (VCB = 25 Vdc, IE = 0 Adc, TA = 125°C) ICBO − − − − 1.0 10 mAdc (VEB = 5.0 Vdc, IC = 0 Adc) IEBO − − 10 mAdc (VCE = 3.0 Vdc, IC = 100 mAdc) hFE 150 − − Vdc Collector −Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) − − 0.25 Vdc Collector −Emitter Saturation Voltage (IC = 700 mAdc, IB = 70 mAdc) VCE(sat) − − 0.4 Vdc Base−Emitter Saturation Voltage (IC = 700 mAdc, IB = 70 mAdc) VBE(sat) − − 1.1 Vdc (IC = 700 mAdc, VCE = 1.0 Vdc) VBE(on) − − 1.0 Vdc Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain 0.3 VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) Collector−Emitter Saturation Voltage 0.7 A 0.2 0.5 A 0.1 10 mA 0 0.1 A IC = 1.0 mA 0.000001 0.00001 0.0001 0.001 0.01 0.1 0.1 0.1 A 10 mA IC = 1.0 mA 0 0.000001 0.00001 0.0001 0.01 IB, BASE CURRENT (A) IB, BASE CURRENT (A) Figure 1. Collector Saturation Region Figure 2. Collector Saturation Region 0.1 1.0 1000 VBE(sat) h FE , DC CURRENT GAIN VCE = 3.0 V VOLTAGE (V) 25°C 150°C 0.1 0.01 VCE(sat) −40°C 100 0.001 0.01 0.1 1.0 0.001 IC/IB = 10 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain Figure 4. “ON” Voltages http://onsemi.com 2 1.0 MMBT2132T3 1.0 0.16 VCE(sat) , VOLTAGE (V) IC/IB = 10 0.1 VCE(sat) 0.01 0.001 0.1 0.01 25°C 0°C 0.08 0.04 0 1.0 0.01 1.0 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. “ON” Voltages Figure 6. Collector−Emitter Saturation Voltage 0.2 1.0 0°C IC/IB = 100 VCE(sat), VOLTAGE (V) T = 85°C 0.12 IC/IB = 100 −40°C 25°C 0.15 VBE(on) , VOLTAGE (V) VOLTAGE (V) VBE(sat) T = 85°C 0.1 0.05 0.75 25°C 150°C 0.5 0.25 VCE = 1.0 V TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0 0.01 0.1 0 1.0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 7. Collector−Emitter Saturation Voltage Figure 8. VBE(on) Voltage 1.0 1.0 0.5 0.2 0.1 0.1 P(pk) 0.05 t1 0.02 0.01 t2 DUTY CYCLE, D = t1/t2 0.01 0.0001 0.001 0.01 0.1 1.0 TIME (sec) Figure 9. Thermal Response Curve http://onsemi.com 3 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZqJA(t) = r(t) RqJA TJ(pk) − TA = P(pk) ZqJA(t) 10 100 MMBT2132T3 PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04. D 6 5 4 2 3 E HE 1 b DIM A A1 b c D E e L HE q e 0.05 (0.002) q C A L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 2: PIN 1. NO CONNECTION 2. COLLECTOR 3. EMITTER 4. NO CONNECTION 5. COLLECTOR 6. BASE SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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