JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBTA13，14 1. BASE TRANSISTOR（NPN） 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.3W（Tamb=25℃） Collector current ICM: 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range T J ，T stg: -55℃ to +150 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol ０．９５ ０．４ ０．９５ １．９ ２．９ ２．４ １．３ unless Test otherwise specified） conditions Collector-base breakdown voltage V(BR)CBO Ic= 100μA， Collector-emitter breakdown voltage V(BR)CEO Collector-emitter breakdown voltage V(BR)EBO Unit : mm MIN IE=0 MAX UNIT 30 V Ic= 100uA， IB=0 30 V IE= 100μA， Ic=0 10 V Collector cut-off current ICBO VCB=30 V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 10V , 0.1 μA hFE(1) * IC=0 VCE=5V, IC= 10m A DC current gain hFE(2) * VCE=5 V, IC= 100mA MMBTA13 5000 MMBTA14 10000 MMBTA13 10000 MMBTA14 20000 Collector-emitter saturation voltage VCE (sat) * IC=100 mA, IB=0.1mA 1.5 V Base-emitter voltage VBE * VCE=5V,IC= 100mA 2.0 V Transition frequency fT * Pulse Test : pulse width≤３００μｓ，ｄｕｔｙ ｃｙｃｌｅ≤２％。 Marking : MMBTA13:1M；MMBTA14：1N VCE=5V, IC= 10mA f=100MHz 125 MHz SOT-23 PACKAGE OUTLINE DIMENSIONS D θ b L E E1 L1 0.2 e C Symbol A A1 A2 e1 Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 1.800 L 0.100 0.037TPY 0.950TPY 2.000 0.071 0.550REF 0.079 0.022REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8°