PN100 PN100A MMBT100 MMBT100A C E C B TO-92 SOT-23 E B Mark: NA / NA1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol TA=25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA= 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation Max Units PN100A 625 5.0 83.3 *MMBT100A 350 2.8 200 357 mW mW/°C °C/W °C/W PN100 / MMBT100 / PN100A / MMBT100A Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA= 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCBO Collector-Base Breakdown Voltage IC = 10 µA, IB = 0 75 BVCEO Collector-Emitter Breakdown Voltage* IC = 1 mA, IE = 0 45 V BVEBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V ICBO Collector Cutoff Current VCB = 60 V 50 nA ICES Collector Cutoff Current VCE = 40 V 50 nA IEBO Emitter Cutoff Current VEB = 4 V 50 nA V ON CHARACTERISTICS hFE IC = 100 µA, VCE = 1.0 V DC Current Gain 100 100A 100 100A IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V* IC = 150 mA, VCE = 5.0 V* VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage 100 100A 80 240 100 300 100 100 100 450 600 350 IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* 0.2 0.4 0.85 1.0 V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product VCE = 20 V, IC = 20 mA Cobo Output Capacitance VCB = 5.0 V, f = 1.0 MHz NF Noise Figure IC = 100 µA, VCE = 5.0 V, RG = 2.0 kΩ, f = 1.0 kHz 250 MHz 100 100A 4.5 pF 5.0 4.0 dB dB *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Typical Pulsed Current Gain vs Collector Current 400 Vce = 5V 125 °C 300 25 °C 200 - 40 °C 100 0 10 20 30 50 100 200 300 I C - COLLECTOR CURRENT (mA) 500 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.4 β = 10 0.3 25 °C 0.2 125 °C 0.1 - 40 °C 1 10 100 I C - COLLECTOR CURRENT (mA) 400 PN100 / MMBT100 / PN100A / MMBT100A NPN General Purpose Amplifier (continued) (continued) Base-Emitter Saturation Voltage vs Collector Current 1 - 40 °C 0.8 25 °C 0.6 125 °C 0.4 β = 10 0.2 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 300 VBEON- BASE-EMITTER ON VOLTAGE (V) VBESAT- COLLECTOR-EMITTER VOLTAGE (V) Typical Characteristics Base-Emitter ON Voltage vs Collector Current 1 - 40 °C 0.8 25 °C 0.6 125 °C 0.4 V CE = 5V 0.2 1 f = 1.0 MHz VCB = 60V CAPACITANCE (pF) ICBO- COLLECTOR CURRENT (nA) 100 10 1 0.1 25 50 75 100 125 TA - AMBIENT TEMPERATURE ( ºC) 10 Cib Cob 1 0.1 0.1 150 100 700 270 P D - POWER DISSIPATION (mW) 300 ts 240 210 180 IB1 = IB2 = Ic / 10 V cc = 10 V 150 120 90 tf 60 0 10 1 10 Vce - COLLECTOR VOLTAGE(V) Power Dissipation vs Ambient Temperature Switching Times vs Collector Current 30 500 Input and Output Capacitance vs Reverse Voltage Collector-Cutoff Current vs Ambient Temperature TIME (nS) 10 100 I C - COLLECTOR CURRENT (mA) tr td 20 30 50 100 200 I C - COLLECTOR CURRENT (mA) 300 600 500 TO-92 SOT-23 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 PN100 / MMBT100 / PN100A / MMBT100A NPN General Purpose Amplifier