2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 B SOT-23 E Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Sourced from Process 07. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V V V V V VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage 30 25 35 30 4.5 IC Collector Current - Continuous 100 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C 2N5088 2N5089 2N5088 2N5089 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation Max Units 2N5088 2N5089 625 5.0 83.3 *MMBT5088 *MMBT5089 350 2.8 200 357 mW mW/°C °C/W °C/W 2N5088 / MMBT5088 / 2N5089 / MMBT5089 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units 50 50 50 100 V V V V nA nA nA nA OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 1.0 mA, IB = 0 V(BR)CBO Collector-Base Breakdown Voltage I C = 100 µA, I E = 0 ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCB = 20 V, IE = 0 VCB = 15 V, IE = 0 VEB = 3.0 V, IC = 0 VEB = 4.5 V, IC = 0 2N5088 2N5089 2N5088 2N5089 2N5088 2N5089 30 25 35 30 2N5088 2N5089 2N5088 2N5089 2N5088 2N5089 300 400 350 450 300 400 ON CHARACTERISTICS hFE DC Current Gain I C = 100 µA, VCE = 5.0 V I C = 1.0 mA, VCE = 5.0 V I C = 10 mA, VCE = 5.0 V* 900 1200 VCE(sat ) Collector-Emitter Saturation Voltage I C = 10 mA, IB = 1.0 mA 0.5 V VBE( on) Base-Emitter On Voltage I C = 10 mA, VCE = 5.0 V 0.8 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Ccb Collector-Base Capacitance IC = 500 µA,VCE = 5.0 mA, f = 20 MHz VCB = 5.0 V, IE = 0, f = 100 kHz Ceb Emitter-Base Capacitance VBE = 0.5 V, I C = 0, f = 100 kHz hfe Small-Signal Current Gain NF Noise Figure IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz IC = 100 µA, VCE = 5.0 V, RS = 10 kΩ, f = 10 Hz to 15.7 kHz 2N5088 2N5089 2N5088 2N5089 50 350 450 MHz 4.0 pF 10 pF 1400 1800 3.0 2.0 dB dB *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2 Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p Itf=.35 Vtf=4 Xtf=7 Rb=10) 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier (continued) Typical Pulsed Current Gain vs Collector Current VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN DC Typical Characteristics 400 350 Vce=5V 125 °C 300 250 200 25 °C 150 100 - 40 °C 50 0 0.01 0.03 0.1 0.3 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100 Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 β = 10 0.2 125 °C 0.15 25 °C 0.1 - 40 °C 0.05 0.1 1 10 I C - COLLECTOR CURRENT (mA) P0 Base-Emitter Saturation Voltage vs Collector Current VBEON- BASE-EMITTER ON VOLTAGE (V) VBESAT- COLLECTOR-EMITTER VOLTAGE (V) P 07 1 0.8 - 40 °C 25 °C 0.6 125 °C 0.4 β = 10 0.2 1 10 I C - COLLECTOR CURRENT (mA) 100 Base-Emitter ON Voltage vs Collector Current 1 0.8 - 40 °C 25 °C 0.6 125 °C 0.4 V CE = 5V 0.2 0.1 1 10 IC - COLLECTOR CURRENT (mA) P0 Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 0.1 100 10 VCB = 45V 1 0.1 25 50 75 100 125 TA - AMBIENT TEMPERATURE ( ºC) P0 150 40 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier (continued) AC Typical Characteristics Input / Output Capacitance vs. Reverse Bias Voltage Normalized Collector Cutoff Current vs. Ambient Temperature Noise Figure vs. Frequency Contours of Constant Gain Bandwidth Product (fT) Wideband Noise Figure vs. Source Resistance Contours of Constant Narrow Band Noise Figure 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier (continued) AC Typical Characteristics (continued) Contours of Constant Narrow Band Noise Figure Contours of Constant Narrow Band Noise Figure Contours of Constant Narrow Band Noise Figure Maximum Power Dissipation vs. Ambient Temperature 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier (continued) Typical Common Emitter Characteristics (f = 1.0 kHz) 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier