FMB2222A FFB2222A E2 MMPQ2222A C2 B2 E1 C1 C1 E1 C2 B1 B2 E3 E4 B4 B2 B1 pin #1 E2 B3 E2 E1 pin #1 B1 SC70-6 SuperSOT-6 Mark: .1P Mark: .1P C1 SOIC-16 C2 C1 C3 C2 C4 C4 C3 NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 1998 Fairchild Semiconductor Corporation Max FFB2222A 300 2.4 415 FMB2222A 700 5.6 180 Units MMPQ2222A 1,000 8.0 125 240 mW mW/°C °C/W °C/W °C/W FFB2222A / FMB2222A / MMPQ2222A Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO IC = 10 mA, IB = 0 V(BR)CBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage 40 V V(BR)EBO Emitter-Base Breakdown Voltage IC = 10 µA, IE = 0 75 V IE = 10 µA, IC = 0 6.0 ICEX Collector Cutoff Current VCE = 60 V, VEB(OFF) = 3.0 V ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 125°C VEB = 3.0 V, IC = 0 IBL Base Cutoff Current VCE = 60 V, VEB(OFF) = 3.0 V V 10 nA 0.01 10 10 µA µA nA 20 nA ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage* VBE(sat) Base-Emitter Saturation Voltage* IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC= 10 mA,VCE= 10 V,TA= -55°C IC = 150 mA, VCE = 10 V* IC = 150 mA, VCE = 1.0 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 1.0 mA IC = 500 mA, IB = 50 mA 35 50 75 35 100 50 40 300 0.3 1.0 1.2 2.0 0.6 V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product 300 Output Capacitance IC = 20 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, IE = 0, f = 100 kHz Cobo Cibo NF MHz 4.0 pF Input Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 20 pF Noise Figure IC = 100 µA, VCE = 10 V, RS = 1.0 kΩ, f = 1.0 kHz 2.0 dB SWITCHING CHARACTERISTICS td Delay Time VCC = 30 V, VBE(OFF) = 0.5 V, 8 ns tr Rise Time IC = 150 mA, IB1 = 15 mA 20 ns ts Storage Time VCC = 30 V, IC = 150 mA, 180 ns tf Fall Time IB1 = IB2 = 15 mA 40 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FFB2222A / FMB2222A / MMPQ2222A NPN Multi-Chip General Purpose Amplifier (continued) VCE = 5V 400 125 °C 300 200 25 °C 100 - 40 °C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 Base-Emitter Saturation Voltage vs Collector Current β = 10 1 - 40 °C 0.8 25 °C 0.6 125 °C 0.4 1 IC 10 100 - COLLECTOR CURRENT (mA) 500 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) 500 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBESAT- BASE-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 0.4 β = 10 0.3 125 °C 0.2 25 °C 0.1 - 40 °C 1 10 100 I C - COLLECTOR CURRENT (mA) 500 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 °C 25 °C 0.6 125 °C 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 Emitter Transition and Output Capacitance vs Reverse Bias Voltage 500 100 V CB 20 = 40V CAPACITANCE (pF) I CBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs Ambient Temperature Collector-Emitter Saturation Voltage vs Collector Current 10 1 0.1 16 12 C te 8 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE ( °C) 150 f = 1 MHz 0.1 C ob 1 10 REVERSE BIAS VOLTAGE (V) 100 FFB2222A / FMB2222A / MMPQ2222A NPN Multi-Chip General Purpose Amplifier (continued) Typical Characteristics (continued) Turn On and Turn Off Times vs Collector Current Switching Times vs Collector Current 400 400 I B1 = I B2 = 320 Ic V cc = 25 V TIME (nS) 240 160 t off 80 240 ts 160 tr tf 80 t on td 100 I C - COLLECTOR CURRENT (mA) 1000 0 10 100 I C - COLLECTOR CURRENT (mA) Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) TIME (nS) 10 320 V cc = 25 V 0 10 Ic I B1 = I B2 = 10 SOT-6 0.75 0.5 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 1000 FFB2222A / FMB2222A / MMPQ2222A NPN Multi-Chip General Purpose Amplifier (continued) Test Circuits 30 V 200 Ω 16 V 1.0 KΩ Ω 0 ≤ 200ns 500 Ω FIGURE 1: Saturated Turn-On Switching Time 6.0 V - 15 V 1k 30 V 1.0 KΩ Ω 0 ≤ 200ns 50 Ω FIGURE 2: Saturated Turn-Off Switching Time 37 Ω FFB2222A / FMB2222A / MMPQ2222A NPN Multi-Chip General Purpose Amplifier