TN6726A NZT6726 C E C C B TO-226 SOT-223 BE PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 77. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 30 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.5 A -55 to +150 °C TJ, Tstg Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max TN6726A 1.0 8.0 50 *NZT6726 1.0 8.0 125 125 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . 2 1997 Fairchild Semiconductor Corporation Units W mW/°C °C/W °C/W TN6726A / NZT6726 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage I C = 10 mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage I C = 100 µA, I E = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 100 µA, IC = 0 5.0 V ICBO Collector-Cutoff Current VCB = 40 V, IE = 0 0.1 µA IEBO Emitter-Cutoff Current VEB = 5.0 V, IC = 0 0.1 µA ON CHARACTERISTICS* hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage I C = 100 mA, VCE = 1.0 V I C = 1.0 A, VCE = 1.0 V I C = 1.0 A, IB = 100 mA VBE( on) Base-Emitter On Voltage I C = 1.0 A, VCE = 1.0 V 60 50 250 0.5 V 1.2 V SMALL SIGNAL CHARACTERISTICS hfe Small-Signal Current Gain Ccb Collector-Base Capacitance I C = 50 mA, VCE = 10 V, f = 20 MHz VCB = 10 V, IE = 0, f = 1.0 MHz 2.5 25 30 pF *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% Typical Pulsed Current Gain vs Collector Current 300 V CE = 5V 250 125 °C 200 25 °C 150 100 - 40 ºC 50 0 0.01 IC 0.1 1 - COLLECTOR CURRENT (A) 2 VCESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN DC Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 1 β = 10 0.8 0.6 25 °C 0.4 - 40 ºC 0.2 0 0.01 0.1 1 I C - COLLECTOR CURRENT (A) P 125 °C 3 TN6726A / NZT6726 PNP General Purpose Amplifier (continued) (continued) Base-Emitter Saturation Voltage vs Collector Current β = 10 1 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) DC Typical Characteristics Base-Emitter ON Voltage vs Collector Current 1 0.8 0.8 - 40 ºC 25 °C - 40 ºC 25 °C 0.6 125 °C 0.6 125 °C 0.4 0.4 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 VCE = 5V 1 10 100 I C - COLLECTOR CURRENT (mA) P P 77 ICBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs Ambient Temperature 100 V CB = 20V 10 1 0.1 25 50 75 100 125 TA - AMBIENT TEMPERATURE (ºC) 150 AC Typical Characteristics Collector-Base Capacitance vs. Collector-Base Voltage Gain Bandwidth Product vs. Collector Current 1000 TN6726A / NZT6726 PNP General Purpose Amplifier (continued) AC Typical Characteristics (continued) Safe Operating Area TO-226 POWER DISSIPATION vs AMBIENT TEMPERATURE PD - POWER DISSIPATION (W) 1 0.75 TO-226 SOT-223 0.5 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 TN6726A / NZT6726 PNP General Purpose Amplifier