MPSA56 MMBTA56 PZTA56 C C E E C BE TO-92 SOT-23 C B B SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCES Collector-Emitter Voltage 80 VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max *MMBTA56 350 2.8 **PZTA56 1,000 8.0 200 357 125 *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. 1997 Fairchild Semiconductor Corporation Units MPSA56 625 5.0 83.3 mW mW/ °C ° C/W °C/W MPSA56 / MMBTA56 / PZTA56 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage ICEO ICBO IC = 1.0 mA, IB = 0 80 V IC = 100 µA, IE = 0 80 V 4.0 Collector-Cutoff Current IE = 100 µA, I C = 0 VCE = 60 V, I B = 0 Collector-Cutoff Current VCB = 80 V, I E = 0 V 0.1 µA 0.1 µA ON CHARACTERISTICS hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage I C = 10 mA, VCE = 1.0 V I C = 100 mA, VCE = 1.0 V I C = 100 mA, IB = 10 mA VBE( on) Base-Emitter On Voltage I C = 100 mA, VCE = 1.0 V 100 100 0.25 V 1.2 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product I C = 100 mA, VCE = 1.0 V, f = 100 MHz 50 MHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model PNP (Is=12.27p Xti=3 Eg=1.11 Vaf=100 Bf=91.63 Ne=1.531 Ise=12.27p Ikf=1.009 Xtb=1.5 Br=1.287 Nc=2 Isc=0 Ikr=0 Rc=.6 Cjc=48.28p Mjc=.5615 Vjc=.75 Fc=.5 Cje=106.7p Mje=.5168 Vje=.75 Tr=496.3n Tf=865.8p Itf=.2 Vtf=2 Xtf=.8 Rb=10) Typical Pulsed Current Gain vs Collector Current 300 250 VCE = 1V 125 °C 200 150 25 °C 100 - 40 ºC 50 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) P 3 VCESAT - COLLECTOR EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.8 β = 10 0.6 0.4 25 °C 0.2 - 40 ºC 125 °C 0 10 100 I C - COLLECTOR CURRENT (mA) MPSA56 / MMBTA56 / PZTA56 PNP General Purpose Amplifier (continued) (continued) Base-Emitter Saturation Voltage vs Collector Current 1.2 β = 10 1 - 40 ºC 0.8 25 °C 125 °C 0.6 0.4 10 100 I C - COLLECTOR CURRENT (mA) 1000 Base Emitter ON Voltage vs Collector Current VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) Typical Characteristics 1.2 1 - 40 ºC 0.8 25 °C 0.6 125 °C 0.4 V CE = 1V 0.2 0 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) P 3 P 3 V CE - COLLECTOR-EMITTER VOLTAGE (V) 10 VCB = 60Vz 1 0.1 0.01 50 75 100 TA - AMBIENT TEMPERATURE ( ºC) 125 Input and Output Capacitance vs Reverse Voltage T A = 25°C 8 6 IC = 1 mA 100 mA 10 mA 4 2 0 3000 5000 10000 20000 30000 50000 I B - BASE CURRENT (uA) Gain Bandwidth Product vs Collector Current 40 f = 1.0 MHz 100 CAPACITANCE (pF) Collector Saturation Region 10 f T - GAIN BANDWIDTH PRODUCT (MHz) ICBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs. Ambient Temperature 0.001 25 1000 VCE = 5V 30 C ib 20 Cob 0.1 1 10 V CE - COLLECTOR VOLTAGE(V) 10 100 0 1 10 I C- 20 50 COLLECTOR CURRENT (mA) P 3 100 MPSA56 / MMBTA56 / PZTA56 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature PD - POWER DISSIPATION (W) 1 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 MPSA56 / MMBTA56 / PZTA56 PNP General Purpose Amplifier