MPS5179 PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 12 V VCBO Collector-Base Voltage 20 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current - Continuous 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max PN/MPS5179 350 2.8 357 *MMBT5179 225 1.8 556 Units mW mW/°C °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation 5179, Rev B MPS5179 / MMBT5179 / PN5179 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS VCEO(sus) Collector-Emitter Sustaining Voltage* IC = 3.0 mA, IB = 0 12 V V(BR)CBO Collector-Base Breakdown Voltage IC = 1.0 µA, IE = 0 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 2.5 V ICBO Collector Cutoff Current VCB = 15 V, IE = 0 VCB = 15 V, TA = 150°C 0.02 1.0 µA µA ON CHARACTERISTICS hFE DC Current Gain IC = 3.0 mA, VCE = 1.0 V 25 250 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.4 V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 1.0 V 2000 MHz 1.0 pF SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Ccb Collector-Base Capacitance hfe Small-Signal Current Gain rb’Cc Collector Base Time Constant NF Noise Figure IC = 5.0 mA, VCE = 6.0 V, f = 100 MHz VCB = 10 V, IE = 0, f = 0.1 to 1.0 MHz IC = 2.0 mA, VCE = 6.0 V, f = 1.0 kHz IC = 2.0 mA, VCB = 6.0 V, f = 31.9 MHz IC = 1.5 mA, VCE = 6.0 V, RS = 50Ω, f = 200 MHz 900 VCE = 6.0 V, IC = 5.0 mA, f = 200 MHz VCB = 10 V, IE = 12 mA, f ≥ 500 MHz 15 dB 20 mW 25 300 3.0 14 ps 5.0 dB FUNCTIONAL TEST Gpe Amplifier Power Gain PO Power Output *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=282.1 Ne=1.177 Ise=69.28E-18 Ikf=22.03m Xtb=1.5 Br=1.176 Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.588n Tf=135.6p Itf=.27 Vtf=10 Xtf=30 Rb=10) MPS5179 / MMBT5179 / PN5179 NPN RF Transistor (continued) 125 °C 200 150 25 °C 100 - 40 ºC 50 V CE = 5V VBESAT- BASE-EMITTER VOLTAGE (V) 0 0.001 0.01 I C - COLLECTOR CURRENT (A) 0.1 Base-Emitter Saturation Voltage vs Collector Current 1.2 1 - 40 ºC 0.8 25 °C 125 °C 0.6 β = 10 0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 20 30 Collector-Emitter Saturation Voltage vs Collector Current 0.2 β = 10 0.15 125 °C 0.1 25 °C 0.05 - 40 ºC 0.1 1 10 I C - COLLECTOR CURRENT (mA) Base-Emitter ON Voltage vs Collector Current 1 0.8 - 40 ºC 25 °C 0.6 125 °C 0.4 0.2 0.01 V CE = 5V 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 V CB = 20V 10 1 0.1 25 20 30 P 40 Collector-Cutoff Current vs Ambient Temperature I CBO- COLLECTOR CURRENT (nA) h FE - DC CURRENT GAIN 250 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) DC Current Gain vs Collector Current VCESAT- COLLECTOR-EMITTER VOLTAGE (V) DC Typical Characteristics 50 75 100 125 T A - AMBIENT TEMPERATURE (ºC) 150 50 MPS5179 / MMBT5179 / PN5179 NPN RF Transistor (continued) AC Typical Characteristics PD - POWER DISSIPATION (mW) POWER DISSIPATION vs AMBIENT TEMPERATURE 350 300 250 SOT-23 TO-92 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( ° C) 125 150 Test Circuit 50 pF (NOTE 2) 175 pF 500 mHz Output Ω into 50Ω RFC (NOTE 1) 1000 pF 2.2 KΩ Ω - VCC NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long 1000 pF RFC VCC FIGURE 1: 500 MHz Oscillator Circuit MPS5179 / MMBT5179 / PN5179 NPN RF Transistor