TK40X10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK40X10J1 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Small gate charge • Low drain-source ON-resistance: RDS (ON) = 15 mΩ(typ.) Unit: mm : Qg = 59 nC (typ.) • High forward transfer admittance: |Yfs| = 60 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) • Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Drain-gate voltage (RGS = 20 kΩ) VDGR 100 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 40 Pulse (Note 1) IDP 160 Drain power dissipation (Tc = 25°C) PD 125 W JEITA SC-97 Single pulse avalanche energy (Note 2) EAS 99 mJ TOSHIBA 2-9F1B Avalanche current IAR 40 A Repetitive avalanche energy (Note 3) EAR 12.5 mJ Channel temperature (Note 4) Tch 175 °C Storage temperature range (Note 4) Tstg −55 to 175 °C Drain current Note : A ⎯ JEDEC Weight: 0.74 g (typ.) Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Max Unit Rth (ch-c) 1.2 °C/W Note 1: Ensure that the channel temperature does not exceed 175°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 100 μH, IAR = 40 A, RG = 1 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature Note 4: The definitions of the absolute maximum channel temperature and storage temperatures are based on AEC-Q101. This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-08-04 TK40X10J1 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS VDS = 100 V, VGS = 0 V ⎯ ⎯ 10 μA 100 ⎯ ⎯ V Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V V (BR) DSX ID = 10 mA, VGS = −20 V 55 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 3.0 ⎯ 4.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 20 A ⎯ 15 20 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 20 A 30 60 ⎯ S Input capacitance Ciss ⎯ 3300 ⎯ Reverse transfer capacitance Crss ⎯ 180 ⎯ Output capacitance Coss ⎯ 580 ⎯ ⎯ 7 ⎯ ⎯ 25 ⎯ ⎯ 11 ⎯ ⎯ 66 ⎯ ⎯ 59 ⎯ ⎯ 16 ⎯ ⎯ 25 ⎯ ⎯ 19 ⎯ Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz tr ton Switching time Fall time tf Turn-off time 0V VOUT VDD ≈ 50 V toff Total gate charge (gate-source plus gate-drain) ID = 20 A 10 V 4.7 Ω Turn-on time VGS RL = 2.5 Ω Gate threshold voltage Duty ≤ 1%, tw = 10 μs Qg Gate-source charge Qgs1 Gate-switch charge Qgw Gate-drain (“miller”) charge Qgd VDD ≈ 80 V, VGS = 10 V, ID = 40 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1, Note 5) IDR1 ⎯ ⎯ ⎯ 40 A Pulse drain reverse current (Note 1, Note 5) IDRP1 ⎯ ⎯ ⎯ 160 A Continuous drain reverse current (Note 1, Note 5) IDR2 ⎯ ⎯ ⎯ 1 A Pulse drain reverse current IDRP2 ⎯ ⎯ ⎯ 4 A (Note 1, Note 5) Forward voltage (diode) VDS2F IDR1 = 40 A, VGS = 0 V ⎯ ⎯ −1.2 V Reverse recovery time trr ⎯ 77 ⎯ ns Reverse recovery charge Qrr IDR = 40 A, VGS = 0 V, dIDR/dt = 50 A/μs ⎯ 110 ⎯ nC Note 5: IDR1, IDRP1: Current flowing between the drain and S2 pins. Ensure that the S1 pin is left open. IDR2, IDRP2: Current flowing between the drain and S1 pins. Ensure that the S2 pin is left open. The S1 and S2 pins should be grounded together, unless otherwise noted. Marking K40X10J 1 Note 6: A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Part No. (or abbreviation code) Lot No. Note 6 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-08-04 TK40X10J1 ID – VDS Common source Tc = 25℃ Pulse test 10 6.5 ID – VDS 80 6 7 (A) 8 30 10 6.5 6 7 8 60 ID Drain Current Drain Current Common source Tc = 25℃ Pulse test 5.5 ID (A) 40 20 VGS = 5 V 10 40 5.5 20 VGS = 5 V 0 0 0.4 0.8 1.2 Drain-source voltage VDS 0 1.6 0 (V) 0.5 1 Drain-source voltage ID – VGS VDS (V) Common source Tc = 25℃ Pulse test (V) Common source VDS = 10 V Pulse test 1.6 VDS 160 3 VDS – VGS 120 Drain-source voltage (A) ID 2.5 2.0 200 Drain Current 2 1.5 80 100 40 Tc = −55°C 25 1.2 0.8 ID = 40 A 0.4 20 10 0 0 2 4 6 Gate-source voltage 8 VGS 0 10 0 (V) 4 8 Gate-source voltage 100 Tc = −55°C 100 25 10 1 1 10 Drain current 16 VGS 20 (V) RDS (ON) – ID 100 Common source VDS = 10 V Pulse test Drain-source ON-resistance RDS (ON) (mΩ) Forward transfer admittance ⎪Yfs⎪ (S) ⎪Yfs⎪ – ID 1000 12 ID (A) VGS = 10 V 10 1 100 Common source Tc = 25℃ Pulse test 1 Drain current 3 100 10 ID 1000 (A) 2009-08-04 TK40X10J1 IDR – VDS RDS (ON) – Tc 40 IDR 30 40 Drain reverse current 25 ID = 10,20 A 20 15 VGS = 10 V 10 5 0 −80 −40 Common source Tc = 25℃ Pulse test (A) Common source Tc = 25°C Pulse test 35 0 40 120 80 Case temperature Tc 160 100 10 5 10 3 1 1 200 0 (°C) −0.4 −0.8 Capacitance – VDS Vth (V) Gate threshold voltage (V) Coss 100 Crss Common source VGS = 0 V f = 1 MHz Tc = 25°C 1 10 4 3 2 1 0 −80 100 VDS Common source VDS = 10 V ID = 1 mA Pulse test (V) −40 0 40 80 Case temperature PD − Tc 120 TC 160 (°C) Dynamic input/output characteristics 100 120 (V) 20 (V) 140 VDS 16 VDS 80 Drain-source voltage 100 80 60 40 20 0 50 100 Case temperature 200 150 Tc 20 (°C) 40 60 VGS Common source ID = 40 A Tc = 25℃ Pulse test 20 8 4 0 20 40 60 Total gate charge 4 12 VDD = 80 V 40 0 200 VGS (pF) 1000 C Capacitance VDS Vth – Tc Ciss Drain-source voltage PD (W) −2 −1.6 5 10 0.1 Drain power dissipation −1.2 Drain-source voltage 10000 0 VGS = 0, −1 V 80 Qg 100 Gate-source voltage Drain−source ON-resistance RDS (ON) (mΩ) 1000 0 120 (nC) 2009-08-04 TK40X10J1 rth − tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 3 1 Duty = 0.5 0.3 0.2 0.1 PDM Single Pulse 0.1 0.05 t T 0.03 0.02 Duty = t/T Rth (ch-c) = 1.2°C/W 0.01 0.01 0.00001 0.0001 0.001 0.01 Pulse width 0.1 tw 1 (S) Safe operating area EAS – Tch 1000 EAS (mJ) 120 ID max (pulsed) * 1 00 μs * 100 Avalanche energy ID max (continuous) ID (A) Drain current 10 1 ms * 10 DC operation Tc = 25°C 1 100 80 60 40 20 0 25 0.01 0.1 1 75 100 125 150 Channel temperature (initial) 0.1 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 50 175 Tch 200 (°C) VDSS max 10 Drain-source voltage 100 1000 15 V VDS (V) BVDSS IAR 0V VDS VDD Test circuit RG = 1 Ω VDD = 25 V, L = 100 μH 5 Wave form E Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2009-08-04 TK40X10J1 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-08-04