TK40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TK40A10K3 Switching Regulator Application • Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 80 S • Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 40 Pulse (Note 1) IDP 160 Drain power dissipation (Tc = 25°C) PD 40 W Single pulse avalanche energy (Note 2) EAS 137 mJ Avalanche current IAR 40 A Repetitive avalanche energy (Note 3) EAR 3.3 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current A 1: Gate 2: Drain 3: Source ⎯ JEDEC JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Internal Connection Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 3.125 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W Note 1: Ensure that the channel & lead temperature does not exceed 150°C. 1 Note 2: VDD = 50 V, Tch = 25°C, L = 100 μH, IAR = 40 A, RG = 1 Ω Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Handle with care. 1 3 2009-09-29 TK40A10K3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±1 μA Drain cut-OFF current IDSS VDS = 100 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 100 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 65 ⎯ ⎯ Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 20 A ⎯ 11.5 15 mΩ Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 20 A 40 80 ⎯ S Input capacitance Ciss ⎯ 4000 ⎯ Reverse transfer capacitance Crss ⎯ 330 ⎯ Output capacitance Coss ⎯ 480 ⎯ ⎯ 85 ⎯ ⎯ 130 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 10V, VGS = 0 V, f = 1 MHz tr Turn-ON time ID = 20 A VOUT 10 V VGS 0V ton Fall time 4.7 Ω Switching time tf Turn-OFF time Total gate charge (gate-source plus gate-drain) RL = 2.5 Ω VDD ≈ 50 V Duty ≤ 1%, tw = 10 μs toff Qg pF ns ⎯ 70 ⎯ ⎯ 260 ⎯ ⎯ 85 ⎯ ⎯ 20 ⎯ Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd ⎯ 35 ⎯ Gate switch charge QSW ⎯ 40 ⎯ VDD ≈ 80 V, VGS = 10 V, ID = 40 A V nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 40 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 160 A (Note 1) Forward voltage (diode) VDSF IDR = 40 A, VGS = 0 V ⎯ −0.9 −1.2 V Reverse recovery time trr IDR = 40 A, VGS = 0 V, ⎯ 55 ⎯ ns Reverse recovery charge Qrr dIDR / dt = 50 A / μs ⎯ 55 ⎯ nC Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K40A10K3 Part No. (or abbreviation code) Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Lot No. Note 4 The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 TK40A10K3 ID – VDS ID – VDS 40 Common source Tc = 25°C Pulse Test 32 5.4 10 5.6 5.2 10 Common source Tc = 25°C Pulse Test 128 ID 8 24 Drain current 5 16 VGS = 4.8 V 8 0.2 0.4 0.8 0.6 Drain-source voltage 96 5.4 64 5.2 VDS VGS = 5 V 0 (V) 1 2 Drain-source voltage ID – VGS 3 4 VDS 5 (V) VDS – VGS 1 Common source Tc = 25°C Pulse Test 0.8 VDS (V) Common source VDS = 10 V Pulse Test 128 96 Drain-source voltage ID (A) 5.8 5.6 0 1 160 Drain current 6 32 0 0 64 25 100 32 0 Tc = −55°C 0 2 4 6 Gate-source voltage 8 VGS 0.6 ID = 40 A 0.4 20 0.2 10 0 10 0 (V) 4 8 Gate-source voltage |Yfs| – ID Tc = −55°C 100 25 100 10 1 1 10 12 16 VGS 20 (V) RDS (ON) – ID 100 Common source VDS = 10 V Pulse Test Drain-source ON resistance RDS (ON) (mΩ) 1000 Forward transfer admittance ⎪Yfs⎪ (S) 8 (A) 6 (A) ID Drain current 160 100 VGS = 10 V Pulse Test 10 1 1000 Drain current ID (A) Common source Tc = 25°C 1 10 100 1000 Drain current ID (A) 3 2009-09-29 TK40A10K3 RDS (ON) − Tc Common source VGS = 10 V Pulse Test ID = 40 A 10,20 18 12 6 −40 0 40 80 120 100 10 5 10 3 1 0 160 1 VGS = 0 V −0.4 −0.8 −1.2 Drain-source voltage Case temperature Tc (°C) −1.6 VDS Vth − Tc Capacitance – VDS 5 10000 Common source VDS = 10 V ID = 1 mA Pulse Test Vth (V) 1000 Gate threshold voltage Capacitance C (pF) Ciss Coss Crss 100 10 0.1 Common source VGS = 0 V f =1MHz Tc = 25°C 1 10 Drain-source voltage 4 3 2 1 0 −80 100 VDS (V) 0 40 80 (V) Drain-source voltage 30 20 10 40 80 160 100 20 80 16 VDS 40 0 120 Dynamic input / output characteristics 50 Drain power dissipation PD (W) −40 Case temperature Tc (°C) PD − Tc 0 −2 (V) 120 40 60 Case temperature Tc (°C) 80 40 8 VGS 20 0 0 160 12 VDD = 20 V 30 60 Common source ID = 40 A Tc = 25°C Pulse Test 90 4 VGS (V) 0 −80 Common source Tc = 25°C Pulse Test Gate-source voltage 24 IDR − VDS 1000 Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) (mΩ) 30 0 120 Total gate charge Qg (nC) 4 2009-09-29 TK40A10K3 Normalized transient thermal impedance rth (t)/Rth (ch-c) rth – tw 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 PDM SINGLE PULSE t 0.01 0.02 T 0.01 0.001 10μ Duty = t/T Rth (ch-c) = 3.125°C/W 100μ 1m 10m Pulse width 100m tw EAS – Tch 200 EAS (mJ) ID max (pulse) * 100 100 μs * ID max (continuous) Avalanche energy 1 ms * Drain current ID (A) 10 (s) SAFE OPERATING AREA 1000 10 DC OPEATION Tc = 25°C 1 160 120 80 40 0 25 0.1 1 Curves must be derated linearly with increase in temperature. 1 75 100 125 Channel temperature (initial) ※ Single pulse Tc=25℃ 0.01 0.1 50 150 Tch (°C) VDSS max 10 Drain-source voltage 100 1000 20 V VDS (V) BVDSS IAR 0V VDD Test circuit RG = 1 Ω VDD = 50 V, L = 100 μH 5 VDS Wave form Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2009-09-29 TK40A10K3 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29