Si3900DV Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.125 @ VGS = 4.5 V 2.4 0.200 @ VGS = 2.5 V 1.8 D TrenchFETr Power MOSFET Pb-free Available TSOP-6 Top View D1 3 mm G1 1 6 D1 S2 2 5 S1 4 D2 D2 G1 G2 3 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET 2.85 mm Ordering Information: Si3900DV-T1 Si3900DV-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS 12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Drain Current (10 ms Pulse Width) IS TA = 25_C TA = 85_C Operating Junction and Storage Temperature Range PD V 2.4 2.0 1.7 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID 1.4 8 1.05 0.75 1.15 0.83 0.59 0.53 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t 5 sec Steady State Steady State RthJA RthJF Typical Maximum 93 110 130 150 75 90 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71178 S-50329—Rev. C, 28-Feb-05 www.vishay.com 1 Si3900DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.6 Typ Max Unit 1.5 V 100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State Drain-Source On State Resistancea Voltagea VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 85_C 10 VDS 5 V, VGS = 4.5 V mA 5 A VGS = 4.5 V, ID = 2.4 A 0.100 0.125 VGS = 2.5 V, ID = 1.0 A 0.160 0.200 gfs VDS = 5 V, ID = 2.4 A 5 VSD IS = 1.05 A, VGS = 0 V 0.79 1.10 2.1 4.0 rDS(on) Forward Transconductancea Diode Forward VDS = 0 V, VGS = 12 V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.4 Turn-On Delay Time td(on) 10 17 tr 30 50 14 25 6 12 30 50 Rise Time Turn-Off Delay Time VDS = 10 V, VGS = 4.5 V, ID = 2.4 A VDD = 10 V, RL = 10 W ID 1 A, VGEN = 4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 0.3 IF = 3.0 A, di/dt = 100 A/ms nC ns Notes a. Pulse test; pulse width 300 ms, duty cycle 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 10 10 VGS = 4.5 thru 3.5 V 8 TC = −55_C 8 3V I D − Drain Current (A) I D − Drain Current (A) 25_C 6 2.5 V 4 2V 2 6 125_C 4 2 1.5 V 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 71178 S-50329—Rev. C, 28-Feb-05 Si3900DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 300 250 0.4 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.5 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 0.1 Ciss 200 150 100 Coss 50 Crss 0.0 0 0 1 2 3 4 5 6 7 0 4 Gate Charge VDS = 10 V ID = 2.4 A 20 VGS = 4.5 V ID = 2.4 A 1.6 2.7 1.8 0.9 0.0 0.0 16 On-Resistance vs. Junction Temperature 1.8 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 3.6 12 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) 4.5 8 1.4 1.2 1.0 0.8 0.5 1.0 1.5 2.0 0.6 −50 2.5 −25 0 Qg − Total Gate Charge (nC) 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.40 10 1 r DS(on)− On-Resistance ( W ) I S − Source Current (A) ID = 2.4 A TJ = 150_C TJ = 25_C ID = 1 A 0.24 0.16 0.08 0.00 0.1 0.00 0.32 0.3 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) Document Number: 71178 S-50329—Rev. C, 28-Feb-05 1.5 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si3900DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 8 ID = 250 mA 6 −0.0 Power (W) V GS(th) Variance (V) 0.2 −0.2 4 2 −0.4 −0.6 −50 −25 0 25 50 75 100 125 0 150 0.1 0.01 10 1 TJ − Temperature (_C) 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130_C/W 0.02 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−2 10−1 1 10 Square Wave Pulse Duration (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71178. www.vishay.com 4 10−3 Document Number: 71178 S-50329—Rev. C, 28-Feb-05 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1