TN6729A NZT6729 C E C C TO-226 B SOT-223 BE PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA. Sourced from Process 79. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 80 VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range 1.0 A -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max TN6729A 1.0 8.0 50 *NZT6729 1.0 8.0 125 125 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. 1997 Fairchild Semiconductor Corporation Units W mW/°C °C/W °C/W TN6729A / NZT6729 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage I C = 1.0 mA, IB = 0 80 V(BR)CBO Collector-Base Breakdown Voltage I C = 100 µA, I E = 0 80 V V V(BR)EBO Emitter-Base Breakdown Voltage I E = 1.0 mA, IC = 0 5.0 V ICBO Collector-Cutoff Current VCB = 60 V, IE = 0 0.1 µA IEBO Emitter-Cutoff Current VEB = 5.0 V, IC = 0 10 µA ON CHARACTERISTICS* hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage VBE( on) Base-Emitter On Voltage I C = 50 mA, VCE = 1.0 V I C = 250 mA, VCE = 1.0 V I C = 500 mA, VCE = 1.0 V I C = 250 mA, IB = 10 mA I C = 250 mA, IB = 25 mA I C = 250 mA, VCE = 1.0 V 80 50 20 IC = 200 mA, VCE = 5.0 V, f = 20 MHz VCB = 10 V, IE = 0, f = 1.0 MHz 2.5 250 0.5 0.35 1.2 V V V SMALL SIGNAL CHARACTERISTICS hfe Small-Signal Current Gain Ccb Collector-Base Capacitance 25 30 pF *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% Typical Pulsed Current Gain vs Collector Current 200 V CE = 1.0 V 125 °C 150 100 25 °C 50 0 0.01 - 40 °C 0.02 0.05 0.1 0.5 I C - COLLECTOR CURRENT (mA) P 9 1 VCESAT- COLLECTOR EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 2 1 β = 10 25 °C 0.1 - 40 ºC 125 ºC 0.01 10 100 I C - COLLECTOR CURRENT (mA) P 79 1000 TN6729A / NZT6729 PNP General Purpose Amplifier (continued) VBESAT- BASE EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current β = 10 1 - 40 ºC 0.8 25 °C 125 ºC 0.6 0.4 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 ICBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs. Ambient Temperature 100 VCB = 60V 10 1 0.1 0.01 25 50 75 100 T A- AMBIENT TEMPERATURE ( ºC) 125 Gain Bandwidth Product vs Collector Current V CE = 10V 200 150 100 50 1 10 100 I C - COLLECTOR CURRENT (mA) P 9 1 0.8 - 40 ºC 25 °C 0.6 125 ºC 0.4 0.2 V CE = 5V 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 Collector-Base Capacitance vs Collector-Base Voltage 40 f = 1.0 MHz 30 20 10 0 0 4 8 12 16 20 24 28 V CB - COLLECTOR-BASE VOLTAGE (V) Pr79 Safe Operating Area TO-226 250 0 Base Emitter ON Voltage vs Collector Current 10 I C - COLLECTOR CURRENT (A) f T - GAIN BANDWIDTH PRODUCT (MHz) P 9 VBEON - BASE EMITTER ON VOLTAGE (V) (continued) C OBO - COLLECTOR-BASE CAPACITANCE (pF) Typical Characteristics 1000 DC 1 100 µ T DC *PULSED OPERATION T A = 25 °C 0.1 10 µS * S* CO 1.0 LL EC m TO s* RL EA AM D = BIE 25 NT ° C = T 25 ° C LIMIT DETERMINED BY BV CEO 0.01 1 10 V CE - COLLECTOR-EMITTER VOLTAGE (V) Pr79 100 TN6729A / NZT6729 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature PD - POWER DISSIPATION (W) 1 0.75 TO-226 SOT-223 0.5 0.25 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 TN6729A / NZT6729 PNP General Purpose Amplifier