PN200 PN200A MMBT200 MMBT200A C E C B TO-92 SOT-23 E B Mark: N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation Max Units PN200A 625 5.0 83.3 *MMBT200A 350 2.8 200 357 mW mW/°C °C/W °C/W PN200 / MMBT200 / PN200A / MMBT200A Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCBO Collector-Base Breakdown Voltage IC = 10 µA, IB = 0 60 BVCEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IE = 0 45 V BVEBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V ICBO Collector Cutoff Current VCB = 50 V, IE = 0 50 nA ICES Collector Cutoff Current VCE = 40 V, IE = 10 50 nA IEBO Emitter Cutoff Current VEB = 4.0 V, IC = 0 50 nA V ON CHARACTERISTICS hFE IC = 100 µA, VCE = 1.0 V DC Current Gain IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V* IC = 150 mA, VCE = 5.0 V* VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage 80 240 100 300 100 100 100 200 200A 200 200A 200A 200 200A IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* 450 600 350 0.2 0.4 0.85 1.0 V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product VCE = 20 V, IC = 20 mA Cobo Output Capacitance VCB = 10 V, f = 1.0 MHz NF Noise Figure IC = 100 µA, VCE = 5.0 V, RG = 2.0 kΩ, f = 1.0 kHz 250 200 200A MHz 6.0 pF 5.0 4.0 dB dB *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V 400 125 °C 300 25 °C 200 100 0 0.01 - 40 °C 0.1 1 10 100 IC - COLLECTOR CURRENT (mA) VCESAT- COLLECTOR EMITTER VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 β = 10 0.2 0.15 25 °C 0.1 0.05 0 0.1 125 ºC - 40 ºC 1 10 100 I C - COLLECTOR CURRENT (mA) P 68 300 PN200 / MMBT200 / PN200A / MMBT200A PNP General Purpose Amplifier (continued) (continued) Base-Emitter Saturation Voltage vs Collector Current 1.2 β = 10 1 0.8 - 40 ºC 25 °C 125 ºC 0.6 0.4 0.2 0 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 300 VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) Typical Characteristics Base Emitter ON Voltage vs Collector Current 1 0.8 - 40 ºC 25 °C 0.6 125 ºC 0.4 V CE = 5V 0.2 0 0.1 0.1 0.01 25 50 75 100 TA - AMBIENT TEMPERATURE ( º C) 125 BV CER - BREAKDOWN VOLTAGE (V) 1 95 90 85 80 75 70 0.1 1 10 100 Input and Output Capacitance vs Reverse Voltage 4 100 Ta = 25°C 3 2 1000 RESISTANCE (kΩ ) Collector Saturation Region Ic = 100 uA 300 mA 50 mA 1 f = 1.0 MHz CAPACITANCE (pF) VCE - COLLECTOR-EMITTER VOLTAGE (V) ICBO- COLLECTOR CURRENT (nA) V CB = 50V 10 100 200 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base Collector-Cutoff Current vs. Ambient Temperature 100 1 10 I C - COLLECTOR CURRENT (mA) 10 Cib Cob 0 100 300 700 I B - BASE CURRENT (uA) 2000 4000 0.1 1 10 Vce - COLLECTOR VOLTAGE(V) 100 PN200 / MMBT200 / PN200A / MMBT200A PNP General Purpose Amplifier (continued) (continued) Switching Times vs Collector Current Gain Bandwidth Product vs Collector Current 300 40 270 Vce = 5V ts 240 30 TIME (nS) 210 20 180 IB1 = IB2 = Ic / 10 V cc = 10 V 150 120 90 10 tf 60 30 0 10 0 1 10 20 50 100 150 20 30 50 100 200 I C - COLLECTOR CURRENT (mA) P 68 Power Dissipation vs Ambient Temperature 700 600 500 TO-92 SOT-23 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) tr td I C- COLLECTOR CURRENT (mA) P D - POWER DISSIPATION (mW) f T - GAIN BANDWIDTH PRODUCT (MHz) Typical Characteristics 125 150 300 PN200 / MMBT200 / PN200A / MMBT200A PNP General Purpose Amplifier