MPSA64 MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCES Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range 1.2 A -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max Units MPSA64 625 5.0 83.3 *MMBTA64 350 2.8 **PZTA64 1,000 8.0 200 357 125 mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. 1997 Fairchild Semiconductor Corporation A64, Rev A MPSA64 / MMBTA64 / PZTA64 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage IC = 100 µA, IB = 0 ICBO Collector-Cutoff Current VCB = 30 V, IE = 0 100 nA IEBO Emitter-Cutoff Current VEB = 10 V, IC = 0 100 nA 1.5 V 2.0 V 30 V ON CHARACTERISTICS* hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, VCE = 5.0 V IC = 100 mA, VCE = 5.0 V IC = 100 mA, IB = 0.1 mA VBE(on) Base-Emitter On Voltage IC = 100 mA, VCE = 5.0 V 10,000 20,000 SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V, f = 100 MHz 125 MHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Typical Pulsed Current Gain vs Collector Current 50 40 VCE = 5V 125 °C 30 20 10 0 0.01 25 °C - 40 °C 0.1 I C - COLLECTOR CURRENT (A) 1 VCESAT- COLLECTOR EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN (K) Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 1.6 β = 1000 1.2 - 40 ºC 0.8 25 °C 125 ºC 0.4 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 MPSA64 / MMBTA64 / PZTA64 PNP Darlington Transistor (continued) (continued) Base-Emitter Saturation Voltage vs Collector Current 2 VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) Typical Characteristics β = 1000 1.6 - 40 ºC 25 °C 1.2 125 ºC 0.8 0.4 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 Base Emitter ON Voltage vs Collector Current 2 1.6 25 °C 1.2 125 ºC 0.8 V CE = 5V 0.4 0 0.001 Collector-Cutoff Current vs. Ambient Temperature 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 Input and Output Capacitance vs Reverse Bias Voltage 16 100 CB f = 1.0 MHz = 15V CAPACITANCE (pF) V 10 1 0.1 12 8 C ib 4 C ob 0.01 25 50 75 100 TA - AMBIENT TEMPERATURE ( º C) 0 0.1 125 1 10 REVERSE VOLTAGE (V) Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) ICBO- COLLECTOR CURRENT (nA) - 40 ºC SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 100 MPSA64 / MMBTA64 / PZTA64 PNP Darlington Transistor