SuperFET
TM
FCP7N60 / FCPF7N60
600V N-Channel MOSFET
Features
Description
• 650V @TJ = 150°C
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
• Typ. RDS(on) = 0.53Ω
• Ultra low gate charge (typ. Qg = 25nC)
• Low effective output capacitance (typ. Coss.eff = 60pF)
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system miniaturization and higher efficiency.
• 100% avalanche tested
D
{
z
G{
G DS
TO-220
TO-220F
GD S
z
z
{
S
Absolute Maximum Ratings
Symbol
Parameter
FCP7N60
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
IAR
FCPF7N60
Unit
7
4.4
7*
4.4*
A
A
21
21*
A
600
(Note 1)
V
± 30
V
Single Pulsed Avalanche Energy
(Note 2)
230
mJ
Avalanche Current
(Note 1)
7
A
8.3
mJ
4.5
V/ns
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation
(TC = 25°C)
- Derate above 25°C
83
0.67
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
31
0.25
W
W/°C
-55 to +150
°C
300
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
FCP7N60
FCPF7N60
Unit
RθJC
Symbol
Thermal Resistance, Junction-to-Case
Parameter
1.5
4.0
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
©2005 Fairchild Semiconductor Corporation
FCP7N60 / FCPF7N60 Rev. A1
1
www.fairchildsemi.com
FCP7N60 / FCPF7N60 600V N-Channel MOSFET
July 2005
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCP7N60
FCP7N60
TO-220
-
-
50
FCPF7N60
FCPF7N60
TO-220F
-
-
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA, TJ = 25°C
600
--
--
V
VGS = 0V, ID = 250µA, TJ = 150°C
--
650
--
V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
0.6
--
V/°C
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 7A
--
700
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.53
0.6
Ω
--
6
--
S
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 3.5A
gFS
Forward Transconductance
VDS = 40V, ID = 3.5A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 480V, VGS = 0V, f = 1.0MHz
Coss eff.
Effective Output Capacitance
VDS = 0V to 400V, VGS = 0V
VDD = 300V, ID = 7A
RG = 25Ω
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
710
920
pF
--
380
500
pF
--
34
--
pF
--
22
29
pF
--
60
--
pF
--
35
80
ns
--
55
120
ns
--
75
160
ns
--
32
75
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 4, 5)
VDS = 480V, ID = 7A
VGS = 10V
(Note 4, 5)
--
23
30
nC
--
4.2
5.5
nC
--
11.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
7
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
21
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 7A
--
--
1.4
V
trr
Reverse Recovery Time
--
360
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 7A
dIF/dt =100A/µs
--
4.5
--
µC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 3.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FCP7N60 / FCPF7N60 Rev. A1
2
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FCP7N60 / FCPF7N60 600V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
ID , Drain Current [A]
ID, Drain Current [A]
1
10
0
10
10
150°C
25°C
0
10
-55°C
Notes :
1. 250µs Pulse Test
2. TC = 25°C
-1
Note
1. VDS = 40V
2. 250µs Pulse Test
10
-1
10
-1
0
10
2
1
10
10
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.8
IDR , Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
2.0
1.6
1.4
VGS = 10V
1.2
1.0
0.8
0.6
VGS = 20V
0.4
0.2
0.0
1
10
0
10
150°C
25°C
Notes :
1. VGS = 0V
2. 250µs Pulse Test
Note : TJ = 25°C
-1
0
5
10
15
10
20
0.2
0.4
0.6
Figure 5. Capacitance Characteristics
3000
0.8
Ciss = Cgs + Cgd (Cds = shorted)
VGS, Gate-Source Voltage [V]
Capacitance [pF]
Coss
Notes :
1. VGS = 0 V
Ciss
2. f = 1 MHz
Crss
0
1
10
VDS = 250V
10
VDS = 400V
8
6
4
2
Note : ID = 7A
0
VDS, Drain-Source Voltage [V]
FCP7N60 / FCPF7N60 Rev. A1
1.6
VDS = 100V
2000
10
1.4
12
Crss = Cgd
0
-1
10
1.2
Figure 6. Gate Charge Characteristics
Coss = Cds + Cgd
1000
1.0
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
0
5
10
15
20
25
QG, Total Gate Charge [nC]
3
www.fairchildsemi.com
FCP7N60 / FCPF7N60 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2. ID = 250µA
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
Notes :
1. VGS = 10 V
0.5
2. ID = 3.5 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
TJ, Junction Temperature [°C]
2
10
1
Operation in This Area
is Limited by R DS(on)
100 us
1 ms
10 ms
10
DC
0
Notes :
1. TC = 25°C
-1
10
10
10
2
150
200
10
1
Operation in This Area
is Limited by R DS(on)
100 us
1 ms
10 ms
10
100 ms
0
DC
Notes :
1. TC = 25°C
-1
10
2. TJ = 150°C
2. TJ = 150°C
3. Single Pulse
3. Single Pulse
-2
10
100
Figure 9-2. Maximum Safe Operating Area
for FCPF7N60
ID, Drain Current [A]
ID, Drain Current [A]
Figure 9-1. Maximum Safe Operating Area
for FCP7N60
10
50
TJ, Junction Temperature [°C]
-2
0
1
2
10
10
3
10
10
10
VDS, Drain-Source Voltage [V]
0
1
10
2
10
3
10
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
10.0
ID, Drain Current [A]
7.5
5.0
2.5
0.0
25
50
75
100
125
150
TC, Case Temperature [? ]
FCP7N60 / FCPF7N60 Rev. A1
4
www.fairchildsemi.com
FCP7N60 / FCPF7N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FCP7N60 / FCPF7N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FCP7N60
ZθJC(t), Thermal Response
10
0
D = 0 .5
0 .2
N o te s :
1 . Z θ JC ( t) = 1 .5 ° C /W M a x .
0 .1
10
-1
2 . D u ty F a c to r, D = t 1 /t 2
0 .0 5
3 . T J M - T C = P D M * Z θ JC ( t)
0 .0 2
0 .0 1
PDM
10
-2
10
t1
s in g le p u ls e
-5
10
-4
10
-3
10
-2
10
t2
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FCPF7N60
ZθJC(t), Thermal Response
D = 0 .5
10
0
0 .2
0 .1
N o te s :
1 . Z θ JC ( t) 4 .0 ° C /W M a x.
0 .0 5
10
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ JC ( t)
0 .0 2
-1
0 .0 1
PDM
t1
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FCP7N60 / FCPF7N60 Rev. A1
5
www.fairchildsemi.com
FCP7N60 / FCPF7N60 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp
FCP7N60 / FCPF7N60 Rev. A1
VDS (t)
VDD
DUT
10V
ID (t)
tp
6
Time
www.fairchildsemi.com
FCP7N60 / FCPF7N60 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
FCP7N60 / FCPF7N60 Rev. A1
7
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TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
FCP7N60 / FCPF7N60 Rev. A1
8
www.fairchildsemi.com
FCP7N60 / FCPF7N60 600V N-Channel MOSFET
Mechanical Dimensions
(Continued)
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FCP7N60 / FCPF7N60 Rev. A1
9
www.fairchildsemi.com
FCP7N60 / FCPF7N60 600V N-Channel MOSFET
Mechanical Dimensions
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(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
10
FCP7N60 / FCPF7N60 Rev. A1
www.fairchildsemi.com
FCP7N60 / FCPF7N60 600V N-Channel MOSFET
TRADEMARKS