JMnic Product Specification 2SC4369 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SA1658 ・Good linearity of hFE APPLICATIONS ・For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 30 V VCEO Collector-emitter voltage Open base 30 V VEBO Emitter-base voltage Open collector 5 V 3 A 0.3 A 15 W IC Collector current IB Base current PC Collector dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC4369 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A 0.8 V VBE Base-emitter on voltage IC=0.5A ; VCE=2V 1.0 V ICBO Collector cut-off current VCB=20V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 μA hFE-1 DC current gain IC=0.5A ; VCE=2V 70 hFE-2 DC current gain IC=2.5A ; VCE=2V 25 Transition frequency IC=0.5A ; VCE=2V fT CONDITIONS hFE-1 Classifications O Y 70-140 120-240 2 MIN TYP. MAX 30 UNIT V 240 100 MHz JMnic Product Specification 2SC4369 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3