ISC 2SC5802

Inchange Semiconductor
Product Specification
2SC5802
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3P(H)IS package
・High voltage;high speed
・Wide area of safe operation
APPLICATIONS
・For high voltage color display horizontal
deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
10
A
ICM
Collector current-Peak
30
A
PC
Total power dissipation
60
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC5802
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
MAX
UNIT
IC=6A; IB=1.5A
3.0
V
Base-emitter saturation voltage
IC=6A; IB=1.5A
1.5
V
ICES
Collector cut-off current
VCE=1400V; VBE=0
1.0
mA
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=4V; IC=0
1.0
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
15
48
hFE-2
DC current gain
IC=6A ; VCE=5V
7
10
Fall time
VCC=200V; IC=6A;IB1=1.2A
IB2=-2.4A;RL =33.3Ω
tf
CONDITIONS
2
MIN
TYP.
0.1
0.3
μs
Inchange Semiconductor
Product Specification
2SC5802
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3